Vishay Siliconix|场效应晶体管（FETs）、MOSFETs - 页 60

厂商料号	库存情况	价格	数量	数据表	系列	封装/外壳	包装	产品状态	FET 类型	技术	电流 - 连续漏极 (Id) @ 25°C	驱动电压（最大导通电阻，最小导通电阻）	导通电阻 (Rds On)（最大值）@ Id, Vgs	安装类型	栅极阈值电压 (Vgs(th)）（最大值）@ Id	栅极电荷 (Qg)（最大值）@ Vgs	漏极到源极电压 (Vdss)	栅极电压 (Vgs)（最大值）	输入电容 (Ciss)（最大值）@ Vds	认证	FET 特性	供应商设备封装	等级	功耗（最大值）	工作温度
SIHF9640S-GE3 MOSFET P-CH 200V 11A D2PAK Vishay Siliconix	2,111	-	询价单	数据表	-	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Tape & Reel (TR)	Active	P-Channel	MOSFET (Metal Oxide)	11A (Tc)	10V	500mOhm @ 6.6A, 10V	Surface Mount	4V @ 250µA	44 nC @ 10 V	200 V	±20V	1200 pF @ 25 V	-	-	TO-263 (D2PAK)	-	3W (Ta), 125W (Tc)	-55°C ~ 150°C (TJ)
IRFRC20PBF-BE3 N-CHANNEL 600V Vishay Siliconix	3,000	-	询价单	数据表	-	TO-252-3, DPAK (2 Leads + Tab), SC-63	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	2A (Tc)	10V	4.4Ohm @ 1.2A, 10V	Surface Mount	4V @ 250µA	18 nC @ 10 V	600 V	±20V	350 pF @ 25 V	-	-	TO-252AA	-	2.5W (Ta), 42W (Tc)	-55°C ~ 150°C (TJ)
IRF634SPBF MOSFET N-CH 250V 8.1A D2PAK Vishay Siliconix	4,556	-	询价单	数据表	-	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Tube	Obsolete	N-Channel	MOSFET (Metal Oxide)	8.1A (Tc)	10V	450mOhm @ 5.1A, 10V	Surface Mount	4V @ 250µA	41 nC @ 10 V	250 V	±20V	770 pF @ 25 V	-	-	TO-263 (D2PAK)	-	3.1W (Ta), 74W (Tc)	-55°C ~ 150°C (TJ)
SIHP12N50E-BE3 N-CHANNEL 500V Vishay Siliconix	836	-	询价单	数据表	-	TO-220-3	Tube	Active	N-Channel	MOSFET (Metal Oxide)	10.5A (Tc)	10V	380mOhm @ 6A, 10V	Through Hole	4V @ 250µA	50 nC @ 10 V	500 V	±30V	886 pF @ 100 V	-	-	TO-220AB	-	114W (Tc)	-55°C ~ 150°C (TJ)
SIR5110DP-T1-RE3 N-CHANNEL 100 V (D-S) MOSFET POW Vishay Siliconix	11,972	-	询价单	数据表	TrenchFET®	PowerPAK® SO-8	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	13.5A (Ta), 47.6A (Tc)	7.5V, 10V	6mOhm @ 35A, 10V	Surface Mount	4V @ 250µA	20 nC @ 10 V	100 V	±20V	920 pF @ 50 V	-	-	PowerPAK® SO-8	-	4.8W (Ta), 59.5W (Tc)	-55°C ~ 150°C (TJ)
SIR402DP-T1-GE3 MOSFET N-CH 30V 35A PPAK SO-8 Vishay Siliconix	3,000	-	询价单	数据表	TrenchFET®	PowerPAK® SO-8	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	35A (Tc)	4.5V, 10V	6mOhm @ 20A, 10V	Surface Mount	2.2V @ 250µA	42 nC @ 10 V	30 V	±20V	1700 pF @ 15 V	-	-	PowerPAK® SO-8	-	4.2W (Ta), 36W (Tc)	-55°C ~ 150°C (TJ)
IRC830PBF MOSFET N-CH 500V 4.5A TO220-5 Vishay Siliconix	5,132	-	询价单	数据表	HEXFET®	TO-220-5	Tube	Obsolete	N-Channel	MOSFET (Metal Oxide)	4.5A (Tc)	10V	1.5Ohm @ 2.7A, 10V	Through Hole	4V @ 250µA	38 nC @ 10 V	500 V	±20V	610 pF @ 25 V	-	Current Sensing	TO-220-5	-	74W (Tc)	-55°C ~ 150°C (TJ)
SIHA12N50E-E3 MOSFET N-CH 500V 10.5A TO220 Vishay Siliconix	995	-	询价单	数据表	-	TO-220-3 Full Pack	Tube	Active	N-Channel	MOSFET (Metal Oxide)	10.5A (Tc)	10V	380mOhm @ 6A, 10V	Through Hole	4V @ 250µA	50 nC @ 10 V	500 V	±30V	886 pF @ 100 V	-	-	TO-220 Full Pack	-	32W (Tc)	-55°C ~ 150°C (TJ)
IRFR9024PBF-BE3 P-CHANNEL 60V Vishay Siliconix	3,000	-	询价单	数据表	-	TO-252-3, DPAK (2 Leads + Tab), SC-63	Tape & Reel (TR)	Active	P-Channel	MOSFET (Metal Oxide)	8.8A (Tc)	10V	280mOhm @ 5.3A, 10V	Surface Mount	4V @ 250µA	19 nC @ 10 V	60 V	±20V	570 pF @ 25 V	-	-	TO-252AA	-	2.5W (Ta), 42W (Tc)	-55°C ~ 150°C (TJ)
IRF734PBF MOSFET N-CH 450V 4.9A TO220AB Vishay Siliconix	2,789	-	询价单	数据表	-	TO-220-3	Tube	Obsolete	N-Channel	MOSFET (Metal Oxide)	4.9A (Tc)	10V	1.2Ohm @ 2.9A, 10V	Through Hole	4V @ 250µA	45 nC @ 10 V	450 V	±20V	680 pF @ 25 V	-	-	TO-220AB	-	74W (Tc)	-55°C ~ 150°C (TJ)

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