Vishay Siliconix|场效应晶体管（FETs）、MOSFETs - 页 63

厂商料号	库存情况	价格	数量	数据表	系列	封装/外壳	包装	产品状态	FET 类型	技术	电流 - 连续漏极 (Id) @ 25°C	驱动电压（最大导通电阻，最小导通电阻）	导通电阻 (Rds On)（最大值）@ Id, Vgs	安装类型	栅极阈值电压 (Vgs(th)）（最大值）@ Id	栅极电荷 (Qg)（最大值）@ Vgs	漏极到源极电压 (Vdss)	栅极电压 (Vgs)（最大值）	输入电容 (Ciss)（最大值）@ Vds	认证	FET 特性	供应商设备封装	等级	功耗（最大值）	工作温度
SI6433BDQ-T1-GE3 MOSFET P-CH 12V 4A 8TSSOP Vishay Siliconix	7,546	-	询价单	数据表	-	8-TSSOP (0.173", 4.40mm Width)	Tape & Reel (TR)	Obsolete	P-Channel	MOSFET (Metal Oxide)	4A (Ta)	2.5V, 4.5V	40mOhm @ 4.8A, 4.5V	Surface Mount	1.5V @ 250µA	15 nC @ 4.5 V	12 V	±8V	-	-	-	8-TSSOP	-	1.05W (Ta)	-55°C ~ 150°C (TJ)
SIJ4819DP-T1-GE3 P-CHANNEL 80-V (D-S) MOSFET POWE Vishay Siliconix	5,996	-	询价单	数据表	TrenchFET®	PowerPAK® SO-8	Tape & Reel (TR)	Active	P-Channel	MOSFET (Metal Oxide)	11.5A (Ta), 44.4A (Tc)	4.5V, 10V	20.7mOhm @ 10A, 10V	Surface Mount	2.6V @ 250µA	65 nC @ 10 V	80 V	±20V	3420 pF @ 40 V	-	-	PowerPAK® SO-8	-	5W (Ta), 73.5W (Tc)	-55°C ~ 150°C (TJ)
SIHP14N60E-BE3 N-CHANNEL 600V Vishay Siliconix	972	-	询价单	数据表	E	TO-220-3	Tube	Active	N-Channel	MOSFET (Metal Oxide)	13A (Tc)	10V	309mOhm @ 7A, 10V	Through Hole	4V @ 250µA	64 nC @ 10 V	600 V	±30V	1205 pF @ 100 V	-	-	TO-220AB	-	147W (Tc)	-55°C ~ 150°C (TJ)
SIR872ADP-T1-RE3 MOSFET N-CH 150V 53.7A PPAK SO-8 Vishay Siliconix	2,901	-	询价单	数据表	TrenchFET®	PowerPAK® SO-8	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	53.7A (Tc)	7.5V, 10V	18mOhm @ 20A, 10V	Surface Mount	4.5V @ 250µA	47 nC @ 10 V	150 V	±20V	1286 pF @ 75 V	-	-	PowerPAK® SO-8	-	104W (Tc)	-55°C ~ 150°C (TJ)
SIDR608DP-T1-RE3 MOSFET N-CH 45V 51A/208A PPAK Vishay Siliconix	6,000	-	询价单	数据表	TrenchFET® Gen IV	PowerPAK® SO-8	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	51A (Ta), 208A (Tc)	4.5V, 10V	1.2mOhm @ 20A, 10V	Surface Mount	2.3V @ 250µA	167 nC @ 10 V	45 V	+20V, -16V	8900 pF @ 20 V	-	-	PowerPAK® SO-8DC	-	6.25W (Ta), 104W (Tc)	-55°C ~ 150°C (TJ)
SUD25N04-25-E3 MOSFET N-CH 40V 25A TO252 Vishay Siliconix	7,507	-	询价单	数据表	TrenchFET®	TO-252-3, DPAK (2 Leads + Tab), SC-63	Tape & Reel (TR)	Obsolete	N-Channel	MOSFET (Metal Oxide)	25A (Tc)	4.5V, 10V	25mOhm @ 25A, 10V	Surface Mount	3V @ 250µA	20 nC @ 10 V	40 V	±20V	510 pF @ 25 V	-	-	TO-252AA	-	3W (Ta), 33W (Tc)	-55°C ~ 175°C (TJ)
IRC634PBF MOSFET N-CH 250V 8.1A TO220-5 Vishay Siliconix	5,397	-	询价单	数据表	HEXFET®	TO-220-5	Tube	Obsolete	N-Channel	MOSFET (Metal Oxide)	8.1A (Tc)	10V	450mOhm @ 4.9A, 10V	Through Hole	4V @ 250µA	41 nC @ 10 V	250 V	±20V	770 pF @ 25 V	-	Current Sensing	TO-220-5	-	74W (Tc)	-55°C ~ 150°C (TJ)
SI4660DY-T1-GE3 MOSFET N-CH 25V 23.1A 8SO Vishay Siliconix	4,196	-	询价单	数据表	TrenchFET®	8-SOIC (0.154", 3.90mm Width)	Tape & Reel (TR)	Obsolete	N-Channel	MOSFET (Metal Oxide)	23.1A (Tc)	4.5V, 10V	5.8mOhm @ 15A, 10V	Surface Mount	2.2V @ 250µA	45 nC @ 10 V	25 V	±16V	2410 pF @ 15 V	-	-	8-SOIC	-	3.1W (Ta), 5.6W (Tc)	-55°C ~ 150°C (TJ)
IRFBF20STRLPBF MOSFET N-CH 900V 1.7A D2PAK Vishay Siliconix	1,366	-	询价单	数据表	-	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	1.7A (Tc)	10V	8Ohm @ 1A, 10V	Surface Mount	4V @ 250µA	38 nC @ 10 V	900 V	±20V	490 pF @ 25 V	-	-	TO-263 (D2PAK)	-	3.1W (Ta), 54W (Tc)	-55°C ~ 150°C (TJ)
SI4396DY-T1-GE3 MOSFET N-CH 30V 16A 8SO Vishay Siliconix	5,695	-	询价单	数据表	TrenchFET®	8-SOIC (0.154", 3.90mm Width)	Tape & Reel (TR)	Obsolete	N-Channel	MOSFET (Metal Oxide)	16A (Tc)	4.5V, 10V	11.5mOhm @ 10A, 10V	Surface Mount	2.6V @ 250µA	45 nC @ 10 V	30 V	±20V	1675 pF @ 15 V	-	-	8-SOIC	-	3.1W (Ta), 5.4W (Tc)	-55°C ~ 150°C (TJ)

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