Vishay Siliconix|场效应晶体管（FETs）、MOSFETs - 页 57

厂商料号	库存情况	价格	数量	数据表	系列	封装/外壳	包装	产品状态	FET 类型	技术	电流 - 连续漏极 (Id) @ 25°C	驱动电压（最大导通电阻，最小导通电阻）	导通电阻 (Rds On)（最大值）@ Id, Vgs	安装类型	栅极阈值电压 (Vgs(th)）（最大值）@ Id	栅极电荷 (Qg)（最大值）@ Vgs	漏极到源极电压 (Vdss)	栅极电压 (Vgs)（最大值）	输入电容 (Ciss)（最大值）@ Vds	认证	FET 特性	供应商设备封装	等级	功耗（最大值）	工作温度
IRLZ24SPBF MOSFET N-CH 60V 17A D2PAK Vishay Siliconix	5,701	-	询价单	数据表	-	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Tape & Reel (TR)	Obsolete	N-Channel	MOSFET (Metal Oxide)	17A (Tc)	4V, 5V	100mOhm @ 10A, 5V	Surface Mount	2V @ 250µA	18 nC @ 5 V	60 V	±10V	870 pF @ 25 V	-	-	TO-263 (D2PAK)	-	3.7W (Ta), 60W (Tc)	-55°C ~ 175°C (TJ)
SISD5300DN-T1-GE3 N-CHANNEL 30 V (D-S) MOSFET POWE Vishay Siliconix	5,835	-	询价单	数据表	TrenchFET®	PowerPAK® 1212-F	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	62A (Ta), 198A (Tc)	4.5V, 10V	0.87mOhm @ 15A, 10V	Surface Mount	2V @ 250µA	36.2 nC @ 10 V	30 V	+16V, -12V	5030 pF @ 15 V	-	-	PowerPAK® 1212-F	-	5.4W (Ta), 57W (Tc)	-55°C ~ 150°C (TJ)
IRFR9210PBF-BE3 P-CHANNEL 200V Vishay Siliconix	3,000	-	询价单	数据表	-	TO-252-3, DPAK (2 Leads + Tab), SC-63	Tape & Reel (TR)	Active	P-Channel	MOSFET (Metal Oxide)	1.9A (Tc)	10V	3Ohm @ 1.1A, 10V	Surface Mount	4V @ 250µA	8.9 nC @ 10 V	200 V	±20V	170 pF @ 25 V	-	-	TO-252AA	-	2.5W (Ta), 25W (Tc)	-55°C ~ 150°C (TJ)
SISS4402DN-T1-GE3 N-CHANNEL 40 V (D-S) MOSFET POWE Vishay Siliconix	11,900	-	询价单	数据表	TrenchFET®	PowerPAK® 1212-8S	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	35.5A (Ta), 128A (Tc)	4.5V, 10V	2.2mOhm @ 15A, 10V	Surface Mount	2.5V @ 250µA	70 nC @ 10 V	40 V	+20V, -16V	3850 pF @ 20 V	-	-	PowerPAK® 1212-8S	-	5W (Ta), 65.7W (Tc)	-55°C ~ 150°C (TJ)
SISH116DN-T1-GE3 MOSFET N-CH 40V 10.5A PPAK Vishay Siliconix	6,000	-	询价单	数据表	TrenchFET®	PowerPAK® 1212-8SH	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	10.5A (Ta)	4.5V, 10V	7.8mOhm @ 16.4A, 10V	Surface Mount	2.5V @ 250µA	23 nC @ 4.5 V	40 V	±20V	-	-	-	PowerPAK® 1212-8SH	-	1.5W (Ta)	-55°C ~ 150°C (TJ)
IRFL9014PBF MOSFET P-CH 60V 1.8A SOT223 Vishay Siliconix	9,908	-	询价单	数据表	-	TO-261-4, TO-261AA	Tube	Obsolete	P-Channel	MOSFET (Metal Oxide)	1.8A (Tc)	10V	500mOhm @ 1.1A, 10V	Surface Mount	4V @ 250µA	12 nC @ 10 V	60 V	±20V	270 pF @ 25 V	-	-	SOT-223	-	2W (Ta), 3.1W (Tc)	-55°C ~ 150°C (TJ)
SI7328DN-T1-GE3 MOSFET N-CH 30V 35A PPAK1212-8 Vishay Siliconix	4,647	-	询价单	数据表	TrenchFET®	PowerPAK® 1212-8	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	35A (Tc)	4.5V, 10V	6.6mOhm @ 18.9A, 10V	Surface Mount	1.5V @ 250µA	31.5 nC @ 4.5 V	30 V	±12V	2610 pF @ 15 V	-	-	PowerPAK® 1212-8	-	3.78W (Ta), 52W (Tc)	-50°C ~ 150°C (TJ)
SI7104DN-T1-E3 MOSFET N-CH 12V 35A PPAK 1212-8 Vishay Siliconix	5,615	-	询价单	数据表	TrenchFET®	PowerPAK® 1212-8	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	35A (Tc)	2.5V, 4.5V	3.7mOhm @ 26.1A, 4.5V	Surface Mount	1.8V @ 250µA	70 nC @ 10 V	12 V	±12V	2800 pF @ 6 V	-	-	PowerPAK® 1212-8	-	3.8W (Ta), 52W (Tc)	-55°C ~ 150°C (TJ)
SI7328DN-T1-E3 MOSFET N-CH 30V 35A PPAK 1212-8 Vishay Siliconix	3,542	-	询价单	数据表	TrenchFET®	PowerPAK® 1212-8	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	35A (Tc)	4.5V, 10V	6.6mOhm @ 18.9A, 10V	Surface Mount	1.5V @ 250µA	31.5 nC @ 4.5 V	30 V	±12V	2610 pF @ 15 V	-	-	PowerPAK® 1212-8	-	3.78W (Ta), 52W (Tc)	-50°C ~ 150°C (TJ)
SI4626ADY-T1-E3 MOSFET N-CH 30V 30A 8SO Vishay Siliconix	7,782	-	询价单	数据表	TrenchFET®	8-SOIC (0.154", 3.90mm Width)	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	30A (Tc)	4.5V, 10V	3.3mOhm @ 15A, 10V	Surface Mount	2.5V @ 250µA	125 nC @ 10 V	30 V	±20V	5370 pF @ 15 V	-	-	8-SOIC	-	3W (Ta), 6W (Tc)	-55°C ~ 150°C (TJ)

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