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场效应晶体管（FETs）、MOSFETs
| 图片 | 厂商料号 | 库存情况 | 价格 | 数量 | 数据表 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压（最大导通电阻，最小导通电阻） | 导通电阻 (Rds On)（最大值）@ Id, Vgs | 安装类型 | 栅极阈值电压 (Vgs(th)）（最大值）@ Id | 栅极电荷 (Qg)（最大值）@ Vgs | 漏极到源极电压 (Vdss) | 栅极电压 (Vgs)（最大值） | 输入电容 (Ciss)（最大值）@ Vds | 认证 | FET 特性 | 供应商设备封装 | 等级 | 功耗（最大值） | 工作温度 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
SI3481DV-T1-E3MOSFET P-CH 30V 4A 6TSOP Vishay Siliconix |
3,223 | - |
|
数据表 |
TrenchFET® | SOT-23-6 Thin, TSOT-23-6 | Tape & Reel (TR) | Obsolete | P-Channel | MOSFET (Metal Oxide) | 4A (Ta) | 4.5V, 10V | 48mOhm @ 5.3A, 10V | Surface Mount | 3V @ 250µA | 25 nC @ 10 V | 30 V | ±20V | - | - | - | 6-TSOP | - | 1.14W (Ta) | -55°C ~ 150°C (TJ) |
|
SIA450DJ-T1-E3MOSFET N-CH 240V 1.52A PPAK Vishay Siliconix |
4,186 | - |
|
数据表 |
TrenchFET® | PowerPAK® SC-70-6 | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 1.52A (Tc) | 2.5V, 10V | 2.9Ohm @ 700mA, 10V | Surface Mount | 2.4V @ 250µA | 7.04 nC @ 10 V | 240 V | ±20V | 167 pF @ 120 V | - | - | PowerPAK® SC-70-6 | - | 3.3W (Ta), 15W (Tc) | -55°C ~ 150°C (TJ) |
|
|
SIA426DJ-T1-GE3MOSFET N-CH 20V 4.5A PPAK SC70-6 Vishay Siliconix |
7,739 | - |
|
数据表 |
TrenchFET® | PowerPAK® SC-70-6 | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 4.5A (Tc) | 2.5V, 10V | 23.6mOhm @ 9.9A, 10V | Surface Mount | 1.5V @ 250µA | 27 nC @ 10 V | 20 V | ±12V | 1020 pF @ 10 V | - | - | PowerPAK® SC-70-6 | - | 3.5W (Ta), 19W (Tc) | -55°C ~ 150°C (TJ) |
|
SIHP4N80E-BE3N-CHANNEL 600V Vishay Siliconix |
990 | - |
|
数据表 |
E | TO-220-3 | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 4.3A (Tc) | 10V | 1.27Ohm @ 2A, 10V | Through Hole | 4V @ 250µA | 32 nC @ 10 V | 800 V | ±30V | 622 pF @ 100 V | - | - | TO-220AB | - | 69W (Tc) | -55°C ~ 150°C (TJ) |
|
SIHF640S-GE3MOSFET N-CH 200V 18A D2PAK Vishay Siliconix |
940 | - |
|
数据表 |
- | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 18A (Tc) | 10V | 180mOhm @ 11A, 10V | Surface Mount | 4V @ 250µA | 70 nC @ 10 V | 200 V | ±20V | 1300 pF @ 25 V | - | - | TO-263 (D2PAK) | - | 3.1W (Ta), 130W (Tc) | -55°C ~ 150°C (TJ) |
|
IRFI9610GPBFMOSFET P-CH 200V 2A TO220-3 Vishay Siliconix |
918 | - |
|
数据表 |
- | TO-220-3 Full Pack, Isolated Tab | Tube | Active | P-Channel | MOSFET (Metal Oxide) | 2A (Tc) | 10V | 3Ohm @ 1.2A, 10V | Through Hole | 4V @ 250µA | 13 nC @ 10 V | 200 V | ±20V | 180 pF @ 25 V | - | - | TO-220-3 | - | 27W (Tc) | -55°C ~ 150°C (TJ) |
|
SI2327DS-T1-GE3MOSFET P-CH 200V 380MA SOT23-3 Vishay Siliconix |
6,259 | - |
|
数据表 |
TrenchFET® | TO-236-3, SC-59, SOT-23-3 | Tape & Reel (TR) | Obsolete | P-Channel | MOSFET (Metal Oxide) | 380mA (Ta) | 6V, 10V | 2.35Ohm @ 500mA, 10V | Surface Mount | 4.5V @ 250µA | 12 nC @ 10 V | 200 V | ±20V | 510 pF @ 25 V | - | - | SOT-23-3 (TO-236) | - | 750mW (Ta) | -55°C ~ 150°C (TJ) |
|
|
SI3475DV-T1-GE3MOSFET P-CH 200V 0.95A 6-TSOP Vishay Siliconix |
2,916 | - |
|
数据表 |
- | SOT-23-6 Thin, TSOT-23-6 | Cut Tape (CT) | Obsolete | P-Channel | MOSFET (Metal Oxide) | 950mA (Tc) | - | 1.61Ohm @ 900mA, 10V | Surface Mount | 4V @ 250µA | 18 nC @ 10 V | 200 V | - | 500 pF @ 50 V | - | - | 6-TSOP | - | - | - |
|
SI7446BDP-T1-E3MOSFET N-CH 30V 12A PPAK SO-8 Vishay Siliconix |
9,807 | - |
|
数据表 |
TrenchFET® | PowerPAK® SO-8 | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 12A (Ta) | 4.5V, 10V | 7.5mOhm @ 19A, 10V | Surface Mount | 3V @ 250µA | 33 nC @ 5 V | 30 V | ±20V | 3076 pF @ 15 V | - | - | PowerPAK® SO-8 | - | 1.9W (Ta) | -55°C ~ 150°C (TJ) |
|
|
SI7446BDP-T1-GE3MOSFET N-CH 30V 12A PPAK SO-8 Vishay Siliconix |
6,284 | - |
|
数据表 |
TrenchFET® | PowerPAK® SO-8 | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 12A (Ta) | 4.5V, 10V | 7.5mOhm @ 19A, 10V | Surface Mount | 3V @ 250µA | 33 nC @ 5 V | 30 V | ±20V | 3076 pF @ 15 V | - | - | PowerPAK® SO-8 | - | 1.9W (Ta) | -55°C ~ 150°C (TJ) |
