Vishay Siliconix|场效应晶体管（FETs）、MOSFETs - 页 59

厂商料号	库存情况	价格	数量	数据表	系列	封装/外壳	包装	产品状态	FET 类型	技术	电流 - 连续漏极 (Id) @ 25°C	驱动电压（最大导通电阻，最小导通电阻）	导通电阻 (Rds On)（最大值）@ Id, Vgs	安装类型	栅极阈值电压 (Vgs(th)）（最大值）@ Id	栅极电荷 (Qg)（最大值）@ Vgs	漏极到源极电压 (Vdss)	栅极电压 (Vgs)（最大值）	输入电容 (Ciss)（最大值）@ Vds	认证	FET 特性	供应商设备封装	等级	功耗（最大值）	工作温度
SIR826DP-T1-RE3 MOSFET N-CH 80V 60A PPAK SO-8 Vishay Siliconix	4,645	-	询价单	数据表	TrenchFET®	PowerPAK® SO-8	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	60A (Tc)	4.5V, 10V	4.8mOhm @ 20A, 10V	Surface Mount	2.8V @ 250µA	90 nC @ 10 V	80 V	±20V	2900 pF @ 40 V	-	-	PowerPAK® SO-8	-	104W (Tc)	-55°C ~ 150°C (TJ)
SUD35N10-26P-T4GE3 MOSFET N-CH 100V 35A TO252 Vishay Siliconix	6,212	-	询价单	数据表	TrenchFET®	TO-252-3, DPAK (2 Leads + Tab), SC-63	Tape & Reel (TR)	Obsolete	N-Channel	MOSFET (Metal Oxide)	35A (Tc)	7V, 10V	26mOhm @ 12A, 10V	Surface Mount	4.4V @ 250µA	47 nC @ 10 V	100 V	±20V	2000 pF @ 12 V	-	-	TO-252AA	-	8.3W (Ta), 83W (Tc)	-55°C ~ 175°C (TJ)
IRF720LPBF MOSFET N-CH 400V 3.3A TO262-3 Vishay Siliconix	7,000	-	询价单	数据表	-	TO-262-3 Long Leads, I2PAK, TO-262AA	Tube	Active	N-Channel	MOSFET (Metal Oxide)	3.3A (Tc)	10V	1.8Ohm @ 2A, 10V	Through Hole	4V @ 250µA	20 nC @ 10 V	400 V	±20V	410 pF @ 25 V	-	-	TO-262-3	-	3.1W (Ta), 50W (Tc)	-55°C ~ 150°C (TJ)
SIJ4106DP-T1-GE3 N-CHANNEL 100 V (D-S) MOSFET POW Vishay Siliconix	6,000	-	询价单	数据表	TrenchFET®	PowerPAK® SO-8	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	15.8A (Ta), 59A (Tc)	7.5V, 10V	8.3mOhm @ 15A, 10V	Surface Mount	3.8V @ 250µA	64 nC @ 10 V	100 V	±20V	3610 pF @ 50 V	-	-	PowerPAK® SO-8	-	5W (Ta), 69.4W (Tc)	-55°C ~ 150°C (TJ)
IRF9Z14STRLPBF MOSFET P-CH 60V 6.7A D2PAK Vishay Siliconix	766	-	询价单	数据表	-	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Tape & Reel (TR)	Active	P-Channel	MOSFET (Metal Oxide)	6.7A (Tc)	10V	500mOhm @ 4A, 10V	Surface Mount	4V @ 250µA	12 nC @ 10 V	60 V	±20V	270 pF @ 25 V	-	-	TO-263 (D2PAK)	-	3.7W (Ta), 43W (Tc)	-55°C ~ 175°C (TJ)
IRFR9120PBF-BE3 P-CHANNEL 100V Vishay Siliconix	3,000	-	询价单	数据表	-	TO-252-3, DPAK (2 Leads + Tab), SC-63	Tube	Active	P-Channel	MOSFET (Metal Oxide)	5.6A (Tc)	10V	600mOhm @ 3.4A, 10V	Surface Mount	4V @ 250µA	18 nC @ 10 V	100 V	±20V	390 pF @ 25 V	-	-	TO-252AA	-	2.5W (Ta), 42W (Tc)	-55°C ~ 150°C (TJ)
IRFR320TRPBF-BE3 N-CHANNEL 400V Vishay Siliconix	1,918	-	询价单	数据表	-	TO-252-3, DPAK (2 Leads + Tab), SC-63	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	3.1A (Tc)	10V	1.8Ohm @ 1.9A, 10V	Surface Mount	4V @ 250µA	20 nC @ 10 V	400 V	±20V	350 pF @ 25 V	-	-	TO-252AA	-	2.5W (Ta), 42W (Tc)	-55°C ~ 150°C (TJ)
SISS5108DN-T1-GE3 N-CHANNEL 100-V (D-S) MOSFET POW Vishay Siliconix	12,010	-	询价单	数据表	TrenchFET®	PowerPAK® 1212-8S	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	15.4A (Ta), 55.9A (Tc)	7.5V, 10V	10.5mOhm @ 10A, 10V	Surface Mount	4V @ 250µA	23 nC @ 10 V	100 V	±20V	1150 pF @ 50 V	-	-	PowerPAK® 1212-8S	-	5W (Ta), 65.7W (Tc)	-55°C ~ 150°C (TJ)
SIR5112DP-T1-RE3 N-CHANNEL 100 V (D-S) MOSFET POW Vishay Siliconix	5,851	-	询价单	数据表	TrenchFET®	PowerPAK® SO-8	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	12.6A (Ta), 42.6A (Tc)	7.5V, 10V	14.9mOhm @ 10A, 10V	Surface Mount	4V @ 250µA	16 nC @ 10 V	100 V	±20V	790 pF @ 50 V	-	-	PowerPAK® SO-8	-	5W (Ta), 56.8W (Tc)	-55°C ~ 150°C (TJ)
IRFI624GPBF MOSFET N-CH 250V 3.4A TO220-3 Vishay Siliconix	9,679	-	询价单	数据表	-	TO-220-3 Full Pack, Isolated Tab	Tube	Obsolete	N-Channel	MOSFET (Metal Oxide)	3.4A (Tc)	10V	1.1Ohm @ 2A, 10V	Through Hole	4V @ 250µA	14 nC @ 10 V	250 V	±20V	260 pF @ 25 V	-	-	TO-220-3	-	30W (Tc)	-55°C ~ 150°C (TJ)

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