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场效应晶体管（FETs）、MOSFETs
| 图片 | 厂商料号 | 库存情况 | 价格 | 数量 | 数据表 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压（最大导通电阻，最小导通电阻） | 导通电阻 (Rds On)（最大值）@ Id, Vgs | 安装类型 | 栅极阈值电压 (Vgs(th)）（最大值）@ Id | 栅极电荷 (Qg)（最大值）@ Vgs | 漏极到源极电压 (Vdss) | 栅极电压 (Vgs)（最大值） | 输入电容 (Ciss)（最大值）@ Vds | 认证 | FET 特性 | 供应商设备封装 | 等级 | 功耗（最大值） | 工作温度 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
SI4626ADY-T1-GE3MOSFET N-CH 30V 30A 8SO Vishay Siliconix |
9,876 | - |
|
数据表 |
TrenchFET® | 8-SOIC (0.154", 3.90mm Width) | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 30A (Tc) | 4.5V, 10V | 3.3mOhm @ 15A, 10V | Surface Mount | 2.5V @ 250µA | 125 nC @ 10 V | 30 V | ±20V | 5370 pF @ 15 V | - | - | 8-SOIC | - | 3W (Ta), 6W (Tc) | -55°C ~ 150°C (TJ) |
|
SIR5623DP-T1-RE3P-CHANNEL 60 V (D-S) MOSFET POWE Vishay Siliconix |
10,693 | - |
|
数据表 |
- | PowerPAK® SO-8 | Tape & Reel (TR) | Active | P-Channel | MOSFET (Metal Oxide) | 10.5A (Ta), 37.1A(Tc) | 4.5V, 10V | 24mOhm @ 10A, 10V | Surface Mount | 2.6V @ 250µA | 33 nC @ 10 V | 60 V | ±20V | 1575 pF @ 30 V | - | - | PowerPAK® SO-8 | - | 4.8W (Ta), 59.5W (Tc) | -55°C ~ 150°C (TJ) |
|
|
SIR5108DP-T1-RE3N-CHANNEL 100 V (D-S) MOSFET POW Vishay Siliconix |
12,000 | - |
|
数据表 |
TrenchFET® | PowerPAK® SO-8 | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 15.4A (Ta), 55.9A (Tc) | 7.5V, 10V | 7.45mOhm @ 10A, 10V | Surface Mount | 4V @ 250µA | 23 nC @ 10 V | 100 V | ±20V | 1150 pF @ 50 V | - | - | PowerPAK® SO-8 | - | 5.2W (Ta), 65.7W (Tc) | -55°C ~ 150°C (TJ) |
|
|
SIJ4108DP-T1-GE3N-CHANNEL 100 V (D-S) MOSFET POW Vishay Siliconix |
11,722 | - |
|
数据表 |
TrenchFET® | PowerPAK® SO-8 | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 15.2A (Ta), 56.7A (Tc) | 7.5V, 10V | 52mOhm @ 10A, 10V | Surface Mount | 4V @ 250µA | 52 nC @ 10 V | 100 V | ±20V | 2440 pF @ 50 V | - | - | PowerPAK® SO-8 | - | 5W (Ta), 69.4W (Tc) | -55°C ~ 150°C (TJ) |
|
IRF644PBF-BE3MOSFET N-CH 250V 14A TO220AB Vishay Siliconix |
457 | - |
|
数据表 |
- | TO-220-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 14A (Tc) | - | 280mOhm @ 8.4A, 10V | Through Hole | 4V @ 250µA | 68 nC @ 10 V | 250 V | ±20V | 1300 pF @ 25 V | - | - | TO-220AB | - | 125W (Tc) | -55°C ~ 150°C (TJ) |
|
SI1050X-T1-E3MOSFET N-CH 8V 1.34A SC89-6 Vishay Siliconix |
8,698 | - |
|
数据表 |
TrenchFET® | SOT-563, SOT-666 | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 1.34A (Ta) | 1.5V, 4.5V | 86mOhm @ 1.34A, 4.5V | Surface Mount | 900mV @ 250µA | 11.6 nC @ 5 V | 8 V | ±5V | 585 pF @ 4 V | - | - | SC-89 (SOT-563F) | - | 236mW (Ta) | -55°C ~ 150°C (TJ) |
|
SI6435ADQ-T1-E3MOSFET P-CH 30V 4.7A 8-TSSOP Vishay Siliconix |
3,631 | - |
|
数据表 |
TrenchFET® | 8-TSSOP (0.173", 4.40mm Width) | Cut Tape (CT) | Obsolete | P-Channel | MOSFET (Metal Oxide) | 4.7A (Ta) | - | 30mOhm @ 5.5A, 10V | Surface Mount | 1V @ 250µA (Min) | 20 nC @ 5 V | 30 V | - | - | - | - | 8-TSSOP | - | - | - |
|
|
SI6435ADQ-T1-GE3MOSFET P-CH 30V 4.7A 8-TSSOP Vishay Siliconix |
9,413 | - |
|
数据表 |
TrenchFET® | 8-TSSOP (0.173", 4.40mm Width) | Cut Tape (CT) | Obsolete | P-Channel | MOSFET (Metal Oxide) | 4.7A (Ta) | - | 30mOhm @ 5.5A, 10V | Surface Mount | 1V @ 250µA (Min) | 20 nC @ 5 V | 30 V | - | - | - | - | 8-TSSOP | - | - | - |
|
SI1405BDH-T1-GE3MOSFET P-CH 8V 1.6A SC70-6 Vishay Siliconix |
8,181 | - |
|
数据表 |
TrenchFET® | 6-TSSOP, SC-88, SOT-363 | Tape & Reel (TR) | Obsolete | P-Channel | MOSFET (Metal Oxide) | 1.6A (Tc) | 1.8V, 4.5V | 112mOhm @ 2.8A, 4.5V | Surface Mount | 950mV @ 250µA | 5.5 nC @ 4.5 V | 8 V | ±8V | 305 pF @ 4 V | - | - | SC-70-6 | - | 1.47W (Ta), 2.27W (Tc) | -55°C ~ 150°C (TJ) |
|
|
IRC730PBFMOSFET N-CH 400V 5.5A TO220-5 Vishay Siliconix |
9,681 | - |
|
数据表 |
HEXFET® | TO-220-5 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 5.5A (Tc) | 10V | 1Ohm @ 3.3A, 10V | Through Hole | 4V @ 250µA | 38 nC @ 10 V | 400 V | ±20V | 700 pF @ 25 V | - | Current Sensing | TO-220-5 | - | 74W (Tc) | -55°C ~ 150°C (TJ) |
