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场效应晶体管（FETs）、MOSFETs
| 图片 | 厂商料号 | 库存情况 | 价格 | 数量 | 数据表 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压（最大导通电阻，最小导通电阻） | 导通电阻 (Rds On)（最大值）@ Id, Vgs | 安装类型 | 栅极阈值电压 (Vgs(th)）（最大值）@ Id | 栅极电荷 (Qg)（最大值）@ Vgs | 漏极到源极电压 (Vdss) | 栅极电压 (Vgs)（最大值） | 输入电容 (Ciss)（最大值）@ Vds | 认证 | FET 特性 | 供应商设备封装 | 等级 | 功耗（最大值） | 工作温度 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
SQR97N06-6M3L_GE3MOSFET N-CH 60V 50A TO252 Vishay Siliconix |
1,992 | - |
|
数据表 |
- | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Not For New Designs | N-Channel | MOSFET (Metal Oxide) | 97A (Tc) | 4.5V, 10V | 6.3mOhm @ 25A, 10V | Surface Mount | 2.5V @ 250µA | 125 nC @ 10 V | 60 V | ±20V | 6060 pF @ 25 V | AEC-Q101 | - | TO-252AA | Automotive | 136W (Tc) | -55°C ~ 175°C (TJ) |
|
SIHFR9310TR-GE3MOSFET P-CH 400V 1.8A DPAK Vishay Siliconix |
1,638 | - |
|
数据表 |
- | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Active | P-Channel | MOSFET (Metal Oxide) | 1.8A (Tc) | 10V | 7Ohm @ 1.1A, 10V | Surface Mount | 4V @ 250µA | 13 nC @ 10 V | 400 V | ±20V | 270 pF @ 25 V | - | - | TO-252AA | - | 50W (Tc) | -55°C ~ 150°C (TJ) |
|
SI1411DH-T1-E3MOSFET P-CH 150V 420MA SC70-6 Vishay Siliconix |
5,660 | - |
|
数据表 |
TrenchFET® | 6-TSSOP, SC-88, SOT-363 | Tape & Reel (TR) | Obsolete | P-Channel | MOSFET (Metal Oxide) | 420mA (Ta) | 10V | 2.6Ohm @ 500mA, 10V | Surface Mount | 4.5V @ 100µA | 6.3 nC @ 10 V | 150 V | ±20V | - | - | - | SC-70-6 | - | 1W (Ta) | -55°C ~ 150°C (TJ) |
|
SI3867DV-T1-E3MOSFET P-CH 20V 3.9A 6TSOP Vishay Siliconix |
4,593 | - |
|
数据表 |
TrenchFET® | SOT-23-6 Thin, TSOT-23-6 | Tape & Reel (TR) | Obsolete | P-Channel | MOSFET (Metal Oxide) | 3.9A (Ta) | 2.5V, 4.5V | 51mOhm @ 5.1A, 4.5V | Surface Mount | 1.4V @ 250µA | 11 nC @ 4.5 V | 20 V | ±12V | - | - | - | 6-TSOP | - | 1.1W (Ta) | -55°C ~ 150°C (TJ) |
|
SIA411DJ-T1-E3MOSFET P-CH 20V 12A PPAK SC70-6 Vishay Siliconix |
3,987 | - |
|
数据表 |
TrenchFET® | PowerPAK® SC-70-6 | Tape & Reel (TR) | Obsolete | P-Channel | MOSFET (Metal Oxide) | 12A (Tc) | 1.5V, 4.5V | 30mOhm @ 5.9A, 4.5V | Surface Mount | 1V @ 250µA | 38 nC @ 8 V | 20 V | ±8V | 1200 pF @ 10 V | - | - | PowerPAK® SC-70-6 | - | 3.5W (Ta), 19W (Tc) | -55°C ~ 150°C (TJ) |
|
|
SIA411DJ-T1-GE3MOSFET P-CH 20V 12A PPAK SC70-6 Vishay Siliconix |
4,153 | - |
|
数据表 |
TrenchFET® | PowerPAK® SC-70-6 | Tape & Reel (TR) | Obsolete | P-Channel | MOSFET (Metal Oxide) | 12A (Tc) | 1.5V, 4.5V | 30mOhm @ 5.9A, 4.5V | Surface Mount | 1V @ 250µA | 38 nC @ 8 V | 20 V | ±8V | 1200 pF @ 10 V | - | - | PowerPAK® SC-70-6 | - | 3.5W (Ta), 19W (Tc) | -55°C ~ 150°C (TJ) |
|
SI4004DY-T1-GE3MOSFET N-CH 20V 12A 8-SOIC Vishay Siliconix |
4,607 | - |
|
数据表 |
- | 8-SOIC (0.154", 3.90mm Width) | Cut Tape (CT) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 12A (Tc) | - | 13.8mOhm @ 11A, 10V | Surface Mount | 2.5V @ 250µA | 33 nC @ 10 V | 20 V | - | 1280 pF @ 10 V | - | - | 8-SOIC | - | - | - |
|
SI5499DC-T1-GE3MOSFET P-CH 8V 6A 1206-8 CHIPFET Vishay Siliconix |
2,631 | - |
|
数据表 |
TrenchFET® | 8-SMD, Flat Leads | Tape & Reel (TR) | Obsolete | P-Channel | MOSFET (Metal Oxide) | 6A (Tc) | 1.5V, 4.5V | 36mOhm @ 5.1A, 4.5V | Surface Mount | 800mV @ 250µA | 35 nC @ 8 V | 8 V | ±5V | 1290 pF @ 4 V | - | - | 1206-8 ChipFET™ | - | 2.5W (Ta), 6.2W (Tc) | -55°C ~ 150°C (TJ) |
|
IRLZ34LMOSFET N-CH 60V 30A TO262-3 Vishay Siliconix |
7,525 | - |
|
数据表 |
- | TO-262-3 Long Leads, I2PAK, TO-262AA | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 30A (Tc) | 4V, 5V | 50mOhm @ 18A, 5V | Through Hole | 2V @ 250µA | 35 nC @ 5 V | 60 V | ±10V | 1600 pF @ 25 V | - | - | TO-262-3 | - | 3.7W (Ta), 88W (Tc) | -55°C ~ 175°C (TJ) |
|
IRFI734GPBFMOSFET N-CH 450V 3.4A TO220-3 Vishay Siliconix |
5,468 | - |
|
数据表 |
- | TO-220-3 Full Pack, Isolated Tab | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 3.4A (Tc) | 10V | 1.2Ohm @ 2A, 10V | Through Hole | 4V @ 250µA | 45 nC @ 10 V | 450 V | ±20V | 680 pF @ 25 V | - | - | TO-220-3 | - | 35W (Tc) | -55°C ~ 150°C (TJ) |
