Vishay Siliconix|场效应晶体管（FETs）、MOSFETs - 页 55

厂商料号	库存情况	价格	数量	数据表	系列	封装/外壳	包装	产品状态	FET 类型	技术	电流 - 连续漏极 (Id) @ 25°C	驱动电压（最大导通电阻，最小导通电阻）	导通电阻 (Rds On)（最大值）@ Id, Vgs	安装类型	栅极阈值电压 (Vgs(th)）（最大值）@ Id	栅极电荷 (Qg)（最大值）@ Vgs	漏极到源极电压 (Vdss)	栅极电压 (Vgs)（最大值）	输入电容 (Ciss)（最大值）@ Vds	认证	FET 特性	供应商设备封装	等级	功耗（最大值）	工作温度
SIHU4N80AE-GE3 MOSFET N-CH 800V 4.3A IPAK Vishay Siliconix	2,994	-	询价单	数据表	E	TO-251-3 Long Leads, IPAK, TO-251AB	Tube	Active	N-Channel	MOSFET (Metal Oxide)	4.3A (Tc)	10V	1.27Ohm @ 2A, 10V	Through Hole	4V @ 250µA	32 nC @ 10 V	800 V	±30V	622 pF @ 100 V	-	-	IPAK (TO-251)	-	69W (Tc)	-55°C ~ 150°C (TJ)
SISS5110DN-T1-GE3 N-CHANNEL 100 V (D-S) MOSFET POW Vishay Siliconix	12,000	-	询价单	数据表	TrenchFET®	PowerPAK® 1212-8S	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	13.4A (Ta), 46.4A (Tc)	7.5V, 10V	8.9mOhm @ 10A, 10V	Surface Mount	4V @ 250µA	20 nC @ 10 V	100 V	±25V	920 pF @ 50 V	-	-	PowerPAK® 1212-8S	-	4.8W (Ta), 56.8W (Tc)	-55°C ~ 150°C (TJ)
IRF820AS MOSFET N-CH 500V 2.5A D2PAK Vishay Siliconix	3,764	-	询价单	数据表	-	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Tube	Obsolete	N-Channel	MOSFET (Metal Oxide)	2.5A (Tc)	10V	3Ohm @ 1.5A, 10V	Surface Mount	4.5V @ 250µA	17 nC @ 10 V	500 V	±30V	340 pF @ 25 V	-	-	TO-263 (D2PAK)	-	50W (Tc)	-55°C ~ 150°C (TJ)
SI4403BDY-T1-E3 MOSFET P-CH 20V 7.3A 8SO Vishay Siliconix	5,232	-	询价单	数据表	TrenchFET®	8-SOIC (0.154", 3.90mm Width)	Tape & Reel (TR)	Obsolete	P-Channel	MOSFET (Metal Oxide)	7.3A (Ta)	1.8V, 4.5V	17mOhm @ 9.9A, 4.5V	Surface Mount	1V @ 350µA	50 nC @ 5 V	20 V	±8V	-	-	-	8-SOIC	-	1.35W (Ta)	-55°C ~ 150°C (TJ)
SIA419DJ-T1-GE3 MOSFET P-CH 20V 12A PPAK SC70-6 Vishay Siliconix	7,422	-	询价单	数据表	TrenchFET®	PowerPAK® SC-70-6	Tape & Reel (TR)	Obsolete	P-Channel	MOSFET (Metal Oxide)	12A (Tc)	1.2V, 4.5V	30mOhm @ 5.9A, 4.5V	Surface Mount	850mV @ 250µA	29 nC @ 5 V	20 V	±5V	1500 pF @ 10 V	-	-	PowerPAK® SC-70-6	-	3.5W (Ta), 19W (Tc)	-55°C ~ 150°C (TJ)
SI4403BDY-T1-GE3 MOSFET P-CH 20V 7.3A 8SO Vishay Siliconix	2,348	-	询价单	数据表	TrenchFET®	8-SOIC (0.154", 3.90mm Width)	Tape & Reel (TR)	Obsolete	P-Channel	MOSFET (Metal Oxide)	7.3A (Ta)	1.8V, 4.5V	17mOhm @ 9.9A, 4.5V	Surface Mount	1V @ 350µA	50 nC @ 5 V	20 V	±8V	-	-	-	8-SOIC	-	1.35W (Ta)	-55°C ~ 150°C (TJ)
SI4884BDY-T1-E3 MOSFET N-CH 30V 16.5A 8SO Vishay Siliconix	7,717	-	询价单	数据表	TrenchFET®	8-SOIC (0.154", 3.90mm Width)	Tape & Reel (TR)	Obsolete	N-Channel	MOSFET (Metal Oxide)	16.5A (Tc)	4.5V, 10V	9mOhm @ 10A, 10V	Surface Mount	3V @ 250µA	35 nC @ 10 V	30 V	±20V	1525 pF @ 15 V	-	-	8-SOIC	-	2.5W (Ta), 4.45W (Tc)	-55°C ~ 150°C (TJ)
SISA16DN-T1-GE3 MOSFET N-CH 30V 16A PPAK1212-8 Vishay Siliconix	2,260	-	询价单	数据表	TrenchFET®	PowerPAK® 1212-8	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	16A (Ta)	-	6.8mOhm @ 15A, 10V	Surface Mount	2.3V @ 250µA	47 nC @ 10 V	30 V	-	2060 pF @ 15 V	-	-	PowerPAK® 1212-8	-	-	-55°C ~ 150°C (TJ)
SIRA90DP-T1-GE3 MOSFET N-CH 30V 100A PPAK SO-8 Vishay Siliconix	6,357	-	询价单	数据表	-	PowerPAK® SO-8	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	100A (Tc)	4.5V, 10V	0.8mOhm @ 20A, 10V	Surface Mount	2V @ 250µA	153 nC @ 10 V	30 V	+20V, -16V	10180 pF @ 15 V	-	-	PowerPAK® SO-8	-	104W (Tc)	-55°C ~ 150°C (TJ)
IRCZ34PBF MOSFET N-CH 60V 30A TO220-5 Vishay Siliconix	7,174	-	询价单	数据表	HEXFET®	TO-220-5	Tube	Obsolete	N-Channel	MOSFET (Metal Oxide)	30A (Tc)	10V	50mOhm @ 18A, 10V	Through Hole	4V @ 250µA	46 nC @ 10 V	60 V	±20V	1300 pF @ 25 V	-	Current Sensing	TO-220-5	-	88W (Tc)	-55°C ~ 175°C (TJ)

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