| 图片 | 厂商料号 | 库存情况 | 价格 | 数量 | 数据表 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压(最大导通电阻,最小导通电阻) | 导通电阻 (Rds On)(最大值)@ Id, Vgs | 安装类型 | 栅极阈值电压 (Vgs(th))(最大值)@ Id | 栅极电荷 (Qg)(最大值)@ Vgs | 漏极到源极电压 (Vdss) | 栅极电压 (Vgs)(最大值) | 输入电容 (Ciss)(最大值)@ Vds | 认证 | FET 特性 | 供应商设备封装 | 等级 | 功耗(最大值) | 工作温度 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
IRF820SPBFMOSFET N-CH 500V 2.5A D2PAK Vishay Siliconix |
9,652 | - |
|
数据表 |
- | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 2.5A (Tc) | 10V | 3Ohm @ 1.5A, 10V | Surface Mount | 4V @ 250µA | 24 nC @ 10 V | 500 V | ±20V | 360 pF @ 25 V | - | - | TO-263 (D2PAK) | - | 3.1W (Ta), 50W (Tc) | -55°C ~ 150°C (TJ) |
|
IRFR9014PBF-BE3P-CHANNEL 60V Vishay Siliconix |
2,968 | - |
|
数据表 |
- | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tube | Active | P-Channel | MOSFET (Metal Oxide) | 5.1A (Tc) | 10V | 500mOhm @ 3.1A, 10V | Surface Mount | 4V @ 250µA | 12 nC @ 10 V | 60 V | ±20V | 270 pF @ 25 V | - | - | TO-252AA | - | 2.5W (Ta), 25W (Tc) | -55°C ~ 150°C (TJ) |
|
SI4124DY-T1-E3MOSFET N-CH 40V 20.5A 8SO Vishay Siliconix |
5,430 | - |
|
数据表 |
TrenchFET® | 8-SOIC (0.154", 3.90mm Width) | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 20.5A (Tc) | 4.5V, 10V | 7.5mOhm @ 14A, 10V | Surface Mount | 3V @ 250µA | 77 nC @ 10 V | 40 V | ±20V | 3540 pF @ 20 V | - | - | 8-SOIC | - | 2.5W (Ta), 5.7W (Tc) | -55°C ~ 150°C (TJ) |
|
SI4874BDY-T1-GE3MOSFET N-CH 30V 12A 8SO Vishay Siliconix |
3,422 | - |
|
数据表 |
TrenchFET® | 8-SOIC (0.154", 3.90mm Width) | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 12A (Ta) | 4.5V, 10V | 7mOhm @ 16A, 10V | Surface Mount | 3V @ 250µA | 25 nC @ 4.5 V | 30 V | ±20V | 3230 pF @ 15 V | - | - | 8-SOIC | - | 1.6W (Ta) | -55°C ~ 150°C (TJ) |
|
SIHA690N60E-GE3MOSFET N-CH 600V 4.3A TO220 Vishay Siliconix |
4,730 | - |
|
数据表 |
E | TO-220-3 Full Pack | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 4.3A (Tc) | 10V | 700mOhm @ 2A, 10V | Through Hole | 5V @ 250µA | 12 nC @ 10 V | 600 V | ±30V | 347 pF @ 100 V | - | - | TO-220 Full Pack | - | 29W (Tc) | -55°C ~ 150°C (TJ) |
|
SISS5112DN-T1-GE3N-CHANNEL 100 V (D-S) MOSFET POW Vishay Siliconix |
11,904 | - |
|
数据表 |
TrenchFET® | PowerPAK® 1212-8S | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 11A (Ta), 40.7A (Tc) | 7.5V, 10V | 14.9mOhm @ 10A, 10V | Surface Mount | 4V @ 250µA | 16 nC @ 10 V | 100 V | ±20V | 790 pF @ 50 V | - | - | PowerPAK® 1212-8S | - | 3.7W (Ta), 52W (Tc) | -55°C ~ 150°C (TJ) |
|
IRFR220PBF-BE3N-CHANNEL 200V Vishay Siliconix |
3,000 | - |
|
数据表 |
- | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 4.8A (Tc) | 10V | 800mOhm @ 2.9A, 10V | Surface Mount | 4V @ 250µA | 14 nC @ 10 V | 200 V | ±20V | 260 pF @ 25 V | - | - | TO-252AA | - | 2.5W (Ta), 42W (Tc) | -55°C ~ 150°C (TJ) |
|
IRFR9110TRLPBFMOSFET P-CH 100V 3.1A DPAK Vishay Siliconix |
3,000 | - |
|
数据表 |
- | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Active | P-Channel | MOSFET (Metal Oxide) | 3.1A (Tc) | 10V | 1.2Ohm @ 1.9A, 10V | Surface Mount | 4V @ 250µA | 8.7 nC @ 10 V | 100 V | ±20V | 200 pF @ 25 V | - | - | DPAK | - | 2.5W (Ta), 25W (Tc) | -55°C ~ 150°C (TJ) |
|
SIR802DP-T1-GE3MOSFET N-CH 20V 30A PPAK SO-8 Vishay Siliconix |
7,145 | - |
|
数据表 |
TrenchFET® | PowerPAK® SO-8 | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 30A (Tc) | 2.5V, 10V | 5mOhm @ 10A, 10V | Surface Mount | 1.5V @ 250µA | 32 nC @ 10 V | 20 V | ±12V | 1785 pF @ 10 V | - | - | PowerPAK® SO-8 | - | 4.6W (Ta), 27.7W (Tc) | -55°C ~ 150°C (TJ) |
|
SI8497DB-T2-E1MOSFET P-CH 30V 13A 6MICROFOOT Vishay Siliconix |
3,091 | - |
|
数据表 |
TrenchFET® | 6-UFBGA | Tape & Reel (TR) | Active | P-Channel | MOSFET (Metal Oxide) | 13A (Tc) | 2V, 4.5V | 53mOhm @ 1.5A, 4.5V | Surface Mount | 1.1V @ 250µA | 49 nC @ 10 V | 30 V | ±12V | 1320 pF @ 15 V | - | - | 6-microfoot | - | 2.77W (Ta), 13W (Tc) | -55°C ~ 150°C (TJ) |