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场效应晶体管（FETs）、MOSFETs
| 图片 | 厂商料号 | 库存情况 | 价格 | 数量 | 数据表 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压（最大导通电阻，最小导通电阻） | 导通电阻 (Rds On)（最大值）@ Id, Vgs | 安装类型 | 栅极阈值电压 (Vgs(th)）（最大值）@ Id | 栅极电荷 (Qg)（最大值）@ Vgs | 漏极到源极电压 (Vdss) | 栅极电压 (Vgs)（最大值） | 输入电容 (Ciss)（最大值）@ Vds | 认证 | FET 特性 | 供应商设备封装 | 等级 | 功耗（最大值） | 工作温度 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
SIRA58ADP-T1-RE3MOSFET N-CH 40V 32.3A/109A PPAK Vishay Siliconix |
7,340 | - |
|
数据表 |
TrenchFET® Gen IV | PowerPAK® SO-8 | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 32.3A (Ta), 109A (Tc) | 4.5V, 10V | 2.65mOhm @ 15A, 10V | Surface Mount | 2.4V @ 250µA | 61 nC @ 10 V | 40 V | +20V, -16V | 3030 pF @ 20 V | - | - | PowerPAK® SO-8 | - | 5W (Ta), 56.8W (Tc) | -55°C ~ 150°C (TJ) |
|
SIRA72DP-T1-GE3MOSFET N-CH 40V 60A PPAK SO-8 Vishay Siliconix |
6,000 | - |
|
数据表 |
TrenchFET® Gen IV | PowerPAK® SO-8 | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 60A (Tc) | 4.5V, 10V | 3.5mOhm @ 10A, 10V | Surface Mount | 2.4V @ 250µA | 30 nC @ 4.5 V | 40 V | +20V, -16V | 3240 pF @ 20 V | - | - | PowerPAK® SO-8 | - | 56.8W (Tc) | -55°C ~ 150°C (TJ) |
|
SIR500DP-T1-UE3N-CHANNEL 30 V (D-S) MOSFET 150 Vishay Siliconix |
6,000 | - |
|
数据表 |
TrenchFET® Gen V | PowerPAK® SO-8 | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 85.9A (Ta), 350.8A (Tc) | 4.5V, 10V | 0.47mOhm @20A, 10V | Surface Mount | 2.2V @ 250µA | 180 nC @ 10 V | 30 V | +16V, -12V | 8960 pF @ 15 V | - | - | PowerPAK® SO-8 | - | 6.25W (Ta), 104.1W (Tc) | -55°C ~ 150°C (TJ) |
|
SI2308DS-T1-E3MOSFET N-CH 60V 2A SOT23-3 Vishay Siliconix |
5,199 | - |
|
数据表 |
TrenchFET® | TO-236-3, SC-59, SOT-23-3 | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 2A (Ta) | 4.5V, 10V | 160mOhm @ 2A, 10V | Surface Mount | 3V @ 250µA | 10 nC @ 10 V | 60 V | ±20V | 240 pF @ 25 V | - | - | SOT-23-3 (TO-236) | - | 1.25W (Ta) | -55°C ~ 150°C (TJ) |
|
|
SI2309DS-T1-E3MOSFET P-CH 60V 1.25A SOT23-3 Vishay Siliconix |
9,899 | - |
|
数据表 |
TrenchFET® | TO-236-3, SC-59, SOT-23-3 | Tape & Reel (TR) | Obsolete | P-Channel | MOSFET (Metal Oxide) | 1.25A (Ta) | 4.5V, 10V | 340mOhm @ 1.25A, 10V | Surface Mount | 1V @ 250µA (Min) | 12 nC @ 10 V | 60 V | ±20V | - | - | - | SOT-23-3 (TO-236) | - | 1.25W (Ta) | -55°C ~ 150°C (TJ) |
|
SI1046X-T1-GE3MOSFET N-CH 20V SC89-3 Vishay Siliconix |
7,896 | - |
|
数据表 |
TrenchFET® | SC-89, SOT-490 | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 606mA ( Ta) | 1.8V, 4.5V | 420mOhm @ 606mA, 4.5V | Surface Mount | 950mV @ 250µA | 1.49 nC @ 5 V | 20 V | ±8V | 66 pF @ 10 V | - | - | SC-89-3 | - | 250mW (Ta) | -55°C ~ 150°C (TJ) |
|
|
2N7002-E3MOSFET N-CH 60V 115MA TO236 Vishay Siliconix |
2,452 | - |
|
数据表 |
- | TO-236-3, SC-59, SOT-23-3 | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 115mA (Ta) | 5V, 10V | 7.5Ohm @ 500mA, 10V | Surface Mount | 2.5V @ 250µA | - | 60 V | ±20V | 50 pF @ 25 V | - | - | TO-236 | - | 200mW (Ta) | -55°C ~ 150°C (TJ) |
|
SQ1470EH-T1-GE3MOSFET N-CH 30V 2.8A SC70 Vishay Siliconix |
7,761 | - |
|
数据表 |
- | 6-TSSOP, SC-88, SOT-363 | Digi-Reel® | Obsolete | N-Channel | MOSFET (Metal Oxide) | 2.8A (Tc) | - | 65mOhm @ 3.8A, 4.5V | Surface Mount | 1.6V @ 250µA | 6.6 nC @ 4.5 V | 30 V | - | 610 pF @ 25 V | - | - | SC-70-6 | - | - | - |
|
SIHD7N60E-E3MOSFET N-CH 600V 7A DPAK Vishay Siliconix |
9,975 | - |
|
数据表 |
- | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 7A (Tc) | 10V | 600mOhm @ 3.5A, 10V | Surface Mount | 4V @ 250µA | 40 nC @ 10 V | 600 V | ±30V | 680 pF @ 100 V | - | - | TO-252AA | - | 78W (Tc) | -55°C ~ 150°C (TJ) |
|
SIR624DP-T1-RE3MOSFET N-CH 200V 5.7A/18.6A PPAK Vishay Siliconix |
5,909 | - |
|
数据表 |
ThunderFET® | PowerPAK® SO-8 | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 5.7A (Ta), 18.6A (Tc) | 7.5V, 10V | 60mOhm @ 10A, 10V | Surface Mount | 4V @ 250µA | 30 nC @ 10 V | 200 V | ±20V | 1110 pF @ 100 V | - | - | PowerPAK® SO-8 | - | 5W (Ta), 52W (Tc) | -55°C ~ 150°C (TJ) |
