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场效应晶体管(FETs)、MOSFETs

制造商 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度

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图片 厂商料号 库存情况 价格 数量 数据表 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度
SIR4409DP-T1-RE3

SIR4409DP-T1-RE3

P-CHANNEL 40 V (D-S) MOSFET POWE

Vishay Siliconix

5,204 -
SIR4409DP-T1-RE3

数据表

- PowerPAK® SO-8 Tape & Reel (TR) Active P-Channel MOSFET (Metal Oxide) 17.2A (Ta), 60.6A (Tc) 4.5V, 10V 9mOhm @ 15A, 10V Surface Mount 2.3V @ 250µA 126 nC @ 10 V 40 V ±20V 5670 pF @ 20 V - - PowerPAK® SO-8 - 4.8W (Ta), 59.5W (Tc) -55°C ~ 150°C (TJ)
SI7403BDN-T1-E3

SI7403BDN-T1-E3

MOSFET P-CH 20V 8A PPAK1212-8

Vishay Siliconix

4,129 -
SI7403BDN-T1-E3

数据表

TrenchFET® PowerPAK® 1212-8 Tape & Reel (TR) Obsolete P-Channel MOSFET (Metal Oxide) 8A (Tc) 2.5V, 4.5V 74mOhm @ 5.1A, 4.5V Surface Mount 1V @ 250µA 15 nC @ 8 V 20 V ±8V 430 pF @ 10 V - - PowerPAK® 1212-8 - 3.1W (Ta), 9.6W (Tc) -55°C ~ 150°C (TJ)
IRFR110TRLPBF

IRFR110TRLPBF

MOSFET N-CH 100V 4.3A DPAK

Vishay Siliconix

2,990 -
IRFR110TRLPBF

数据表

- TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 4.3A (Tc) 10V 540mOhm @ 2.6A, 10V Surface Mount 4V @ 250µA 8.3 nC @ 10 V 100 V ±20V 180 pF @ 25 V - - DPAK - 25W (Tc) -55°C ~ 150°C (TJ)
SUD23N06-31-T4-GE3

SUD23N06-31-T4-GE3

MOSFET N-CH 60V 21.4A TO252

Vishay Siliconix

2,470 -
SUD23N06-31-T4-GE3

数据表

TrenchFET® TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 21.4A (Tc) 4.5V, 10V 31mOhm @ 15A, 10V Surface Mount 3V @ 250µA 17 nC @ 10 V 60 V ±20V 670 pF @ 25 V - - TO-252AA - 5.7W (Ta), 31.25W (Tc) -55°C ~ 150°C (TJ)
SI7403BDN-T1-GE3

SI7403BDN-T1-GE3

MOSFET P-CH 20V 8A PPAK1212-8

Vishay Siliconix

2,520 -
SI7403BDN-T1-GE3

数据表

TrenchFET® PowerPAK® 1212-8 Tape & Reel (TR) Obsolete P-Channel MOSFET (Metal Oxide) 8A (Tc) 2.5V, 4.5V 74mOhm @ 5.1A, 4.5V Surface Mount 1V @ 250µA 15 nC @ 8 V 20 V ±8V 430 pF @ 10 V - - PowerPAK® 1212-8 - 3.1W (Ta), 9.6W (Tc) -55°C ~ 150°C (TJ)
SQJA46EP-T1_GE3

SQJA46EP-T1_GE3

MOSFET N-CH 40V 60A PPAK SO-8

Vishay Siliconix

14,458 -
SQJA46EP-T1_GE3

数据表

TrenchFET® PowerPAK® SO-8 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 60A (Tc) 10V 3mOhm @ 10A, 10V Surface Mount 3.5V @ 250µA 105 nC @ 10 V 40 V ±20V 5000 pF @ 25 V AEC-Q101 - PowerPAK® SO-8 Automotive 68W (Tc) -55°C ~ 175°C (TJ)
IRFR014PBF-BE3

IRFR014PBF-BE3

MOSFET N-CH 60V 7.7A DPAK

Vishay Siliconix

1,724 -
IRFR014PBF-BE3

数据表

- TO-252-3, DPAK (2 Leads + Tab), SC-63 Tube Active N-Channel MOSFET (Metal Oxide) 7.7A (Tc) - 200mOhm @ 4.6A, 10V Surface Mount 4V @ 250µA 11 nC @ 10 V 60 V ±20V 300 pF @ 25 V - - TO-252AA - 2.5W (Ta), 25W (Tc) -55°C ~ 150°C (TJ)
SIHU7N60E-E3

SIHU7N60E-E3

MOSFET N-CH 600V 7A TO251

Vishay Siliconix

7,154 -
SIHU7N60E-E3

数据表

- TO-251-3 Short Leads, IPAK, TO-251AA Tube Active N-Channel MOSFET (Metal Oxide) 7A (Tc) 10V 600mOhm @ 3.5A, 10V Through Hole 4V @ 250µA 40 nC @ 10 V 600 V ±30V 680 pF @ 100 V - - TO-251AA - 78W (Tc) -55°C ~ 150°C (TJ)
IRF820LPBF

IRF820LPBF

MOSFET N-CH 500V 2.5A I2PAK

Vishay Siliconix

5,434 -
IRF820LPBF

数据表

- TO-262-3 Long Leads, I2PAK, TO-262AA Tube Active N-Channel MOSFET (Metal Oxide) 2.5A (Tc) 10V 3Ohm @ 1.5A, 10V Through Hole 4V @ 250µA 24 nC @ 10 V 500 V ±20V 360 pF @ 25 V - - I2PAK - 3.1W (Ta), 50W (Tc) -55°C ~ 150°C (TJ)
SI6469DQ-T1-E3

SI6469DQ-T1-E3

MOSFET P-CH 8V 8TSSOP

Vishay Siliconix

2,461 -
SI6469DQ-T1-E3

数据表

TrenchFET® 8-TSSOP (0.173", 4.40mm Width) Tape & Reel (TR) Obsolete P-Channel MOSFET (Metal Oxide) 6A (Ta) 1.8V, 4.5V 28mOhm @ 6A, 4.5V Surface Mount 450mV @ 250µA (Min) 40 nC @ 4.5 V 8 V ±8V - - - 8-TSSOP - 1.5W (Ta) -55°C ~ 150°C (TJ)
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