| 图片 | 厂商料号 | 库存情况 | 价格 | 数量 | 数据表 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压(最大导通电阻,最小导通电阻) | 导通电阻 (Rds On)(最大值)@ Id, Vgs | 安装类型 | 栅极阈值电压 (Vgs(th))(最大值)@ Id | 栅极电荷 (Qg)(最大值)@ Vgs | 漏极到源极电压 (Vdss) | 栅极电压 (Vgs)(最大值) | 输入电容 (Ciss)(最大值)@ Vds | 认证 | FET 特性 | 供应商设备封装 | 等级 | 功耗(最大值) | 工作温度 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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SIR4409DP-T1-RE3P-CHANNEL 40 V (D-S) MOSFET POWE Vishay Siliconix |
5,204 | - |
|
数据表 |
- | PowerPAK® SO-8 | Tape & Reel (TR) | Active | P-Channel | MOSFET (Metal Oxide) | 17.2A (Ta), 60.6A (Tc) | 4.5V, 10V | 9mOhm @ 15A, 10V | Surface Mount | 2.3V @ 250µA | 126 nC @ 10 V | 40 V | ±20V | 5670 pF @ 20 V | - | - | PowerPAK® SO-8 | - | 4.8W (Ta), 59.5W (Tc) | -55°C ~ 150°C (TJ) |
|
SI7403BDN-T1-E3MOSFET P-CH 20V 8A PPAK1212-8 Vishay Siliconix |
4,129 | - |
|
数据表 |
TrenchFET® | PowerPAK® 1212-8 | Tape & Reel (TR) | Obsolete | P-Channel | MOSFET (Metal Oxide) | 8A (Tc) | 2.5V, 4.5V | 74mOhm @ 5.1A, 4.5V | Surface Mount | 1V @ 250µA | 15 nC @ 8 V | 20 V | ±8V | 430 pF @ 10 V | - | - | PowerPAK® 1212-8 | - | 3.1W (Ta), 9.6W (Tc) | -55°C ~ 150°C (TJ) |
|
IRFR110TRLPBFMOSFET N-CH 100V 4.3A DPAK Vishay Siliconix |
2,990 | - |
|
数据表 |
- | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 4.3A (Tc) | 10V | 540mOhm @ 2.6A, 10V | Surface Mount | 4V @ 250µA | 8.3 nC @ 10 V | 100 V | ±20V | 180 pF @ 25 V | - | - | DPAK | - | 25W (Tc) | -55°C ~ 150°C (TJ) |
|
SUD23N06-31-T4-GE3MOSFET N-CH 60V 21.4A TO252 Vishay Siliconix |
2,470 | - |
|
数据表 |
TrenchFET® | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 21.4A (Tc) | 4.5V, 10V | 31mOhm @ 15A, 10V | Surface Mount | 3V @ 250µA | 17 nC @ 10 V | 60 V | ±20V | 670 pF @ 25 V | - | - | TO-252AA | - | 5.7W (Ta), 31.25W (Tc) | -55°C ~ 150°C (TJ) |
|
SI7403BDN-T1-GE3MOSFET P-CH 20V 8A PPAK1212-8 Vishay Siliconix |
2,520 | - |
|
数据表 |
TrenchFET® | PowerPAK® 1212-8 | Tape & Reel (TR) | Obsolete | P-Channel | MOSFET (Metal Oxide) | 8A (Tc) | 2.5V, 4.5V | 74mOhm @ 5.1A, 4.5V | Surface Mount | 1V @ 250µA | 15 nC @ 8 V | 20 V | ±8V | 430 pF @ 10 V | - | - | PowerPAK® 1212-8 | - | 3.1W (Ta), 9.6W (Tc) | -55°C ~ 150°C (TJ) |
|
SQJA46EP-T1_GE3MOSFET N-CH 40V 60A PPAK SO-8 Vishay Siliconix |
14,458 | - |
|
数据表 |
TrenchFET® | PowerPAK® SO-8 | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 60A (Tc) | 10V | 3mOhm @ 10A, 10V | Surface Mount | 3.5V @ 250µA | 105 nC @ 10 V | 40 V | ±20V | 5000 pF @ 25 V | AEC-Q101 | - | PowerPAK® SO-8 | Automotive | 68W (Tc) | -55°C ~ 175°C (TJ) |
|
IRFR014PBF-BE3MOSFET N-CH 60V 7.7A DPAK Vishay Siliconix |
1,724 | - |
|
数据表 |
- | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 7.7A (Tc) | - | 200mOhm @ 4.6A, 10V | Surface Mount | 4V @ 250µA | 11 nC @ 10 V | 60 V | ±20V | 300 pF @ 25 V | - | - | TO-252AA | - | 2.5W (Ta), 25W (Tc) | -55°C ~ 150°C (TJ) |
|
SIHU7N60E-E3MOSFET N-CH 600V 7A TO251 Vishay Siliconix |
7,154 | - |
|
数据表 |
- | TO-251-3 Short Leads, IPAK, TO-251AA | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 7A (Tc) | 10V | 600mOhm @ 3.5A, 10V | Through Hole | 4V @ 250µA | 40 nC @ 10 V | 600 V | ±30V | 680 pF @ 100 V | - | - | TO-251AA | - | 78W (Tc) | -55°C ~ 150°C (TJ) |
|
IRF820LPBFMOSFET N-CH 500V 2.5A I2PAK Vishay Siliconix |
5,434 | - |
|
数据表 |
- | TO-262-3 Long Leads, I2PAK, TO-262AA | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 2.5A (Tc) | 10V | 3Ohm @ 1.5A, 10V | Through Hole | 4V @ 250µA | 24 nC @ 10 V | 500 V | ±20V | 360 pF @ 25 V | - | - | I2PAK | - | 3.1W (Ta), 50W (Tc) | -55°C ~ 150°C (TJ) |
|
SI6469DQ-T1-E3MOSFET P-CH 8V 8TSSOP Vishay Siliconix |
2,461 | - |
|
数据表 |
TrenchFET® | 8-TSSOP (0.173", 4.40mm Width) | Tape & Reel (TR) | Obsolete | P-Channel | MOSFET (Metal Oxide) | 6A (Ta) | 1.8V, 4.5V | 28mOhm @ 6A, 4.5V | Surface Mount | 450mV @ 250µA (Min) | 40 nC @ 4.5 V | 8 V | ±8V | - | - | - | 8-TSSOP | - | 1.5W (Ta) | -55°C ~ 150°C (TJ) |