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场效应晶体管（FETs）、MOSFETs
| 图片 | 厂商料号 | 库存情况 | 价格 | 数量 | 数据表 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压（最大导通电阻，最小导通电阻） | 导通电阻 (Rds On)（最大值）@ Id, Vgs | 安装类型 | 栅极阈值电压 (Vgs(th)）（最大值）@ Id | 栅极电荷 (Qg)（最大值）@ Vgs | 漏极到源极电压 (Vdss) | 栅极电压 (Vgs)（最大值） | 输入电容 (Ciss)（最大值）@ Vds | 认证 | FET 特性 | 供应商设备封装 | 等级 | 功耗（最大值） | 工作温度 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
SI4894BDY-T1-GE3MOSFET N-CH 30V 8.9A 8SO Vishay Siliconix |
2,500 | - |
|
数据表 |
TrenchFET® | 8-SOIC (0.154", 3.90mm Width) | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 8.9A (Ta) | 4.5V, 10V | 11mOhm @ 12A, 10V | Surface Mount | 3V @ 250µA | 38 nC @ 10 V | 30 V | ±20V | 1580 pF @ 15 V | - | - | 8-SOIC | - | 1.4W (Ta) | -55°C ~ 150°C (TJ) |
|
SIRA54DP-T1-GE3MOSFET N-CH 40V 60A PPAK SO-8 Vishay Siliconix |
5,980 | - |
|
数据表 |
TrenchFET® Gen IV | PowerPAK® SO-8 | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 60A (Tc) | 4.5V, 10V | 2.35mOhm @ 15A, 10V | Surface Mount | 2.3V @ 250µA | 48 nC @ 4.5 V | 40 V | +20V, -16V | 5300 pF @ 20 V | - | - | PowerPAK® SO-8 | - | 36.7W (Tc) | -55°C ~ 150°C (TJ) |
|
SQJ162EP-T1_GE3AUTOMOTIVE N-CHANNEL 60 V (D-S) Vishay Siliconix |
2,950 | - |
|
数据表 |
TrenchFET® | PowerPAK® SO-8 | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 166A (Tc) | 10V | 5mOhm @ 15A, 10V | Surface Mount | 2.5V @ 250µA | 51 nC @ 10 V | 60 V | ±20V | 3930 pF @ 25 V | AEC-Q101 | - | PowerPAK® SO-8 | Automotive | 250W (Tc) | -55°C ~ 175°C (TJ) |
|
IRFU010MOSFET N-CH 50V 8.2A TO251AA Vishay Siliconix |
5,403 | - |
|
数据表 |
- | TO-251-3 Short Leads, IPAK, TO-251AA | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 8.2A (Tc) | 10V | 200mOhm @ 4.2A, 10V | Through Hole | 4V @ 250µA | 10 nC @ 10 V | 50 V | ±20V | 250 pF @ 25 V | - | - | TO-251AA | - | 25W (Tc) | -55°C ~ 150°C (TJ) |
|
IRF624PBFMOSFET N-CH 250V 4.4A TO220AB Vishay Siliconix |
3,043 | - |
|
数据表 |
- | TO-220-3 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 4.4A (Tc) | 10V | 1.1Ohm @ 2.6A, 10V | Through Hole | 4V @ 250µA | 14 nC @ 10 V | 250 V | ±20V | 260 pF @ 25 V | - | - | TO-220AB | - | 50W (Tc) | -55°C ~ 150°C (TJ) |
|
IRF624PBF-BE3MOSFET N-CH 250V 4.4A TO220AB Vishay Siliconix |
5,626 | - |
|
数据表 |
- | TO-220-3 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 4.4A (Tc) | - | 1.1Ohm @ 2.6A, 10V | Through Hole | 4V @ 250µA | 14 nC @ 10 V | 250 V | ±20V | 260 pF @ 25 V | - | - | TO-220AB | - | 50W (Tc) | -55°C ~ 150°C (TJ) |
|
|
SI4413DDY-T1-GE3MOSFET P-CHANNEL 8SOIC Vishay Siliconix |
6,035 | - |
|
数据表 |
- | 8-SOIC (0.154", 3.90mm Width) | Tape & Reel (TR) | Active | P-Channel | MOSFET (Metal Oxide) | - | 4.5V, 10V | 5.5mOhm @ 10A, 10V | Surface Mount | 1.6V @ 250µA | 114 nC @ 10 V | - | - | 4780 pF @ 15 V | - | - | 8-SOIC | - | - | -55°C ~ 125°C |
|
|
SQJ401EP-T2_GE3MOSFET P-CH 12V 32A PPAK SO-8 Vishay Siliconix |
5,448 | - |
|
数据表 |
TrenchFET® | PowerPAK® SO-8 | Tape & Reel (TR) | Active | P-Channel | MOSFET (Metal Oxide) | 32A (Tc) | 2.5V, 4.5V | 6mOhm @ 15A, 4.5V | Surface Mount | 1.5V @ 250µA | 164 nC @ 4.5 V | 12 V | ±8V | 10015 pF @ 6 V | AEC-Q101 | - | PowerPAK® SO-8 | Automotive | 83W (Tc) | -55°C ~ 175°C (TJ) |
|
|
SQJ431EP-T2_GE3MOSFET P-CH 200V 12A PPAK SO-8 Vishay Siliconix |
7,134 | - |
|
数据表 |
TrenchFET® | PowerPAK® SO-8 | Tape & Reel (TR) | Active | P-Channel | MOSFET (Metal Oxide) | 12A (Tc) | 6V, 10V | 213mOhm @ 3.8A, 10V | Surface Mount | 3.5V @ 250µA | 106 nC @ 10 V | 200 V | ±20V | 4355 pF @ 25 V | AEC-Q101 | - | PowerPAK® SO-8 | Automotive | 83W (Tc) | -55°C ~ 175°C (TJ) |
|
SIHF9630STRL-GE3MOSFET P-CH 200V 6.5A D2PAK Vishay Siliconix |
783 | - |
|
数据表 |
- | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Active | P-Channel | MOSFET (Metal Oxide) | 6.5A (Tc) | 10V | 800mOhm @ 3.9A, 10V | Surface Mount | 4V @ 250µA | 29 nC @ 10 V | 200 V | ±20V | 700 pF @ 25 V | - | - | TO-263 (D2PAK) | - | 3W (Ta), 74W (Tc) | -55°C ~ 150°C (TJ) |
