Vishay Siliconix|场效应晶体管（FETs）、MOSFETs - 页 48

厂商料号	库存情况	价格	数量	数据表	系列	封装/外壳	包装	产品状态	FET 类型	技术	电流 - 连续漏极 (Id) @ 25°C	驱动电压（最大导通电阻，最小导通电阻）	导通电阻 (Rds On)（最大值）@ Id, Vgs	安装类型	栅极阈值电压 (Vgs(th)）（最大值）@ Id	栅极电荷 (Qg)（最大值）@ Vgs	漏极到源极电压 (Vdss)	栅极电压 (Vgs)（最大值）	输入电容 (Ciss)（最大值）@ Vds	认证	FET 特性	供应商设备封装	等级	功耗（最大值）	工作温度
SQS140ELNW-T1_GE3 AUTOMOTIVE N-CHANNEL 40 V (D-S) Vishay Siliconix	3,348	-	询价单	数据表	TrenchFET® GenIV	PowerPAK® 1212-8SLW	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	153A (Tc)	4.5V, 10V	2.53mOhm @ 10A, 10V	Surface Mount, Wettable Flank	2.5V @ 250µA	80 nC @ 10 V	40 V	±20V	4051 pF @ 25 V	AEC-Q101	-	PowerPAK® 1212-8SLW	Automotive	119W (Tc)	-55°C ~ 175°C (TJ)
SQRS152ELP-T1_GE3 AUTOMOTIVE N-CHANNEL 40 V (D-S) Vishay Siliconix	2,642	-	询价单	数据表	TrenchFET®	PowerPAK® SO-8	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	58A (Tc)	4.5V, 10V	5mOhm @ 15A, 10V	Surface Mount	2.2V @ 250µA	34 nC @ 10 V	40 V	±20V	1633 pF @ 25 V	AEC-Q101	-	PowerPAK® SO-8SW	Automotive	35W (Tc)	-55°C ~ 175°C (TJ)
SISS30DN-T1-GE3 MOSFET N-CH 80V 15.9A/54.7A PPAK Vishay Siliconix	12,687	-	询价单	数据表	TrenchFET® Gen IV	PowerPAK® 1212-8S	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	15.9A (Ta), 54.7A (Tc)	7.5V, 10V	8.25mOhm @ 10A, 10V	Surface Mount	3.8V @ 250µA	40 nC @ 10 V	80 V	±20V	1666 pF @ 10 V	-	-	PowerPAK® 1212-8S	-	4.8W (Ta), 57W (Tc)	-55°C ~ 150°C (TJ)
SIR4608DP-T1-GE3 N-CHANNEL 60 V (D-S) MOSFET POWE Vishay Siliconix	6,038	-	询价单	数据表	TrenchFET® Gen IV	PowerPAK® SO-8	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	13.1A (Ta), 42.8A (Tc)	7.5V, 10V	11.8mOhm @ 10A, 10V	Surface Mount	4V @ 250µA	18 nC @ 10 V	60 V	±20V	740 pF @ 30 V	-	-	PowerPAK® SO-8	-	3.6W (Ta), 39W (Tc)	-55°C ~ 150°C (TJ)
SIR618DP-T1-GE3 MOSFET N-CH 200V 14.2A PPAK SO-8 Vishay Siliconix	4,603	-	询价单	数据表	ThunderFET®	PowerPAK® SO-8	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	14.2A (Tc)	7.5V, 10V	95mOhm @ 8A, 10V	Surface Mount	4V @ 250µA	16 nC @ 7.5 V	200 V	±20V	740 pF @ 100 V	-	-	PowerPAK® SO-8	-	48W (Tc)	-55°C ~ 150°C (TJ)
SI5406CDC-T1-GE3 MOSFET N-CH 12V 6A 1206-8 Vishay Siliconix	6,161	-	询价单	数据表	TrenchFET®	8-SMD, Flat Leads	Tape & Reel (TR)	Obsolete	N-Channel	MOSFET (Metal Oxide)	6A (Tc)	1.8V, 4.5V	20mOhm @ 6.5A, 4.5V	Surface Mount	1V @ 250µA	32 nC @ 8 V	12 V	±8V	1100 pF @ 6 V	-	-	1206-8 ChipFET™	-	2.3W (Ta), 5.7W (Tc)	-55°C ~ 150°C (TJ)
SI7720DN-T1-GE3 MOSFET N-CH 30V 12A PPAK1212-8 Vishay Siliconix	5,938	-	询价单	数据表	SkyFET®, TrenchFET®	PowerPAK® 1212-8	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	12A (Tc)	4.5V, 10V	12.5mOhm @ 10A, 10V	Surface Mount	2.5V @ 250µA	45 nC @ 10 V	30 V	±20V	1790 pF @ 15 V	-	-	PowerPAK® 1212-8	-	3.8W (Ta), 52W (Tc)	-50°C ~ 150°C (TJ)
SIA417DJ-T1-GE3 MOSFET P-CH 8V 12A PPAK SC70-6 Vishay Siliconix	9,209	-	询价单	数据表	TrenchFET®	PowerPAK® SC-70-6	Tape & Reel (TR)	Obsolete	P-Channel	MOSFET (Metal Oxide)	12A (Tc)	1.2V, 4.5V	23mOhm @ 7A, 4.5V	Surface Mount	1V @ 250µA	32 nC @ 5 V	8 V	±5V	1600 pF @ 4 V	-	-	PowerPAK® SC-70-6	-	3.5W (Ta), 19W (Tc)	-55°C ~ 150°C (TJ)
SIR412DP-T1-GE3 MOSFET N-CH 25V 20A PPAK SO-8 Vishay Siliconix	5,521	-	询价单	数据表	TrenchFET®	PowerPAK® SO-8	Tape & Reel (TR)	Obsolete	N-Channel	MOSFET (Metal Oxide)	20A (Tc)	4.5V, 10V	12mOhm @ 10A, 10V	Surface Mount	2.5V @ 250µA	16 nC @ 10 V	25 V	±20V	600 pF @ 10 V	-	-	PowerPAK® SO-8	-	3.9W (Ta), 15.6W (Tc)	-55°C ~ 150°C (TJ)
IRLD024PBF MOSFET N-CH 60V 2.5A 4DIP Vishay Siliconix	9,065	-	询价单	数据表	-	4-DIP (0.300", 7.62mm)	Tube	Obsolete	N-Channel	MOSFET (Metal Oxide)	2.5A (Ta)	4V, 5V	100mOhm @ 1.5A, 5V	Through Hole	2V @ 250µA	18 nC @ 5 V	60 V	±10V	870 pF @ 25 V	-	-	4-HVMDIP	-	1.3W (Ta)	-55°C ~ 175°C (TJ)

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