Vishay Siliconix|场效应晶体管（FETs）、MOSFETs - 页 46

厂商料号	库存情况	价格	数量	数据表	系列	封装/外壳	包装	产品状态	FET 类型	技术	电流 - 连续漏极 (Id) @ 25°C	驱动电压（最大导通电阻，最小导通电阻）	导通电阻 (Rds On)（最大值）@ Id, Vgs	安装类型	栅极阈值电压 (Vgs(th)）（最大值）@ Id	栅极电荷 (Qg)（最大值）@ Vgs	漏极到源极电压 (Vdss)	栅极电压 (Vgs)（最大值）	输入电容 (Ciss)（最大值）@ Vds	认证	FET 特性	供应商设备封装	等级	功耗（最大值）	工作温度
SI1330EDL-T1-GE3 MOSFET N-CH 60V 240MA SC70-3 Vishay Siliconix	7,289	-	询价单	数据表	TrenchFET®	SC-70, SOT-323	Tape & Reel (TR)	Obsolete	N-Channel	MOSFET (Metal Oxide)	240mA (Ta)	3V, 10V	2.5Ohm @ 250mA, 10V	Surface Mount	2.5V @ 250µA	0.6 nC @ 4.5 V	60 V	±20V	-	-	-	SC-70-3	-	280mW (Ta)	-55°C ~ 150°C (TJ)
SI4712DY-T1-GE3 MOSFET N-CH 30V 14.6A 8SO Vishay Siliconix	3,816	-	询价单	数据表	SkyFET®, TrenchFET®	8-SOIC (0.154", 3.90mm Width)	Tape & Reel (TR)	Obsolete	N-Channel	MOSFET (Metal Oxide)	14.6A (Tc)	4.5V, 10V	13mOhm @ 15A, 10V	Surface Mount	2.5V @ 1mA	28 nC @ 10 V	30 V	±20V	1084 pF @ 15 V	-	-	8-SOIC	-	2.5W (Ta), 5W (Tc)	-55°C ~ 150°C (TJ)
SQS120ELNW-T1_GE3 AUTOMOTIVE N-CHANNEL 30 V (D-S) Vishay Siliconix	3,000	-	询价单	数据表	TrenchFET®	PowerPAK® 1212-8SLW	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	192A (Tc)	4.5V, 10V	1.8mOhm @ 10A, 10V	Surface Mount, Wettable Flank	2.5V @ 250µA	88 nC @ 10 V	30 V	±20V	4590 pF @ 25 V	AEC-Q101	-	PowerPAK® 1212-8SLW	Automotive	119W (Tc)	-55°C ~ 175°C (TJ)
SIHF530-GE3 MOSFET N-CH 100V 14A TO220AB Vishay Siliconix	971	-	询价单	数据表	-	TO-220-3	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	14A (Tc)	10V	160mOhm @ 8.4A, 10V	Through Hole	4V @ 250µA	26 nC @ 10 V	100 V	±20V	670 pF @ 25 V	-	-	TO-220AB	-	88W (Tc)	-55°C ~ 175°C (TJ)
SIR164ADP-T1-GE3 MOSFET N-CH 30V 35.9A/40A PPAK Vishay Siliconix	2,814	-	询价单	数据表	TrenchFET® Gen IV	PowerPAK® SO-8	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	35.9A (Ta), 40A (Tc)	4.5V, 10V	2.2mOhm @ 15A, 10V	Surface Mount	2.2V @ 250µA	77 nC @ 10 V	30 V	+20V, -16V	3595 pF @ 15 V	-	-	PowerPAK® SO-8	-	5W (Ta), 62.5W (Tc)	-55°C ~ 150°C (TJ)
SIHF530STRL-GE3 MOSFET N-CH 100V 14A D2PAK Vishay Siliconix	700	-	询价单	数据表	-	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	14A (Tc)	10V	160mOhm @ 8.4A, 10V	Surface Mount	4V @ 250µA	26 nC @ 10 V	100 V	±20V	670 pF @ 25 V	-	-	TO-263 (D2PAK)	-	3.7W (Ta), 88W (Tc)	-55°C ~ 175°C (TJ)
SIHF9520S-GE3 MOSFET P-CH 100V 6.8A D2PAK Vishay Siliconix	688	-	询价单	数据表	-	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Tube	Active	P-Channel	MOSFET (Metal Oxide)	6.8A (Tc)	10V	600mOhm @ 4.1A, 10V	Surface Mount	4V @ 250µA	18 nC @ 10 V	100 V	±20V	390 pF @ 25 V	-	-	TO-263 (D2PAK)	-	3.7W (Ta), 60W (Tc)	-55°C ~ 175°C (TJ)
SIJA54DP-T1-GE3 MOSFET N-CH 40V 60A PPAK SO-8 Vishay Siliconix	9,488	-	询价单	数据表	TrenchFET®	PowerPAK® SO-8	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	60A (Tc)	4.5V, 10V	2.35mOhm @ 15A, 10V	Surface Mount	2.4V @ 250µA	104 nC @ 10 V	40 V	+20V, -16V	5300 pF @ 20 V	-	-	PowerPAK® SO-8	-	36.7W (Tc)	-55°C ~ 150°C (TJ)
IRFBC20PBF-BE3 MOSFET N-CH 600V 2.2A TO220AB Vishay Siliconix	972	-	询价单	数据表	-	TO-220-3	Tube	Active	N-Channel	MOSFET (Metal Oxide)	2.2A (Tc)	10V	4.4Ohm @ 1.3A, 10V	Through Hole	4V @ 250µA	18 nC @ 10 V	600 V	±20V	350 pF @ 25 V	-	-	TO-220AB	-	50W (Tc)	-55°C ~ 150°C (TJ)
SIHF840LCS-GE3 MOSFET N-CH 500V 8A D2PAK Vishay Siliconix	5,604	-	询价单	数据表	-	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	8A (Tc)	10V	850mOhm @ 4.8A, 10V	Surface Mount	4V @ 250µA	39 nC @ 10 V	500 V	±30V	1100 pF @ 25 V	-	-	TO-263 (D2PAK)	-	3.1W (Ta), 125W (Tc)	-55°C ~ 150°C (TJ)

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