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场效应晶体管（FETs）、MOSFETs
| 图片 | 厂商料号 | 库存情况 | 价格 | 数量 | 数据表 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压（最大导通电阻，最小导通电阻） | 导通电阻 (Rds On)（最大值）@ Id, Vgs | 安装类型 | 栅极阈值电压 (Vgs(th)）（最大值）@ Id | 栅极电荷 (Qg)（最大值）@ Vgs | 漏极到源极电压 (Vdss) | 栅极电压 (Vgs)（最大值） | 输入电容 (Ciss)（最大值）@ Vds | 认证 | FET 特性 | 供应商设备封装 | 等级 | 功耗（最大值） | 工作温度 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
SIR846ADP-T1-RE3MOSFET N-CH 100V 60A PPAK SO-8 Vishay Siliconix |
8,526 | - |
|
数据表 |
TrenchFET® | PowerPAK® SO-8 | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 60A (Tc) | 6V, 10V | 7.8mOhm @ 20A, 10V | Surface Mount | 3V @ 250µA | 66 nC @ 10 V | 100 V | ±20V | 2350 pF @ 50 V | - | - | PowerPAK® SO-8 | - | 83W (Tc) | -55°C ~ 150°C (TJ) |
|
IRFZ14STRLPBFMOSFET N-CH 60V 10A D2PAK Vishay Siliconix |
9,064 | - |
|
数据表 |
- | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 10A (Tc) | 10V | 200mOhm @ 6A, 10V | Surface Mount | 4V @ 250µA | 11 nC @ 10 V | 60 V | ±20V | 300 pF @ 25 V | - | - | D2PAK | - | 3.7W (Ta), 43W (Tc) | -55°C ~ 175°C (TJ) |
|
IRFD420PBFMOSFET N-CH 500V 370MA 4DIP Vishay Siliconix |
2,936 | - |
|
数据表 |
- | 4-DIP (0.300", 7.62mm) | Bulk | Obsolete | N-Channel | MOSFET (Metal Oxide) | 370mA (Ta) | 10V | 3Ohm @ 220mA, 10V | Through Hole | 4V @ 250µA | 24 nC @ 10 V | 500 V | ±20V | 360 pF @ 25 V | - | - | 4-HVMDIP | - | 1W (Ta) | -55°C ~ 150°C (TJ) |
|
SIJA58ADP-T1-GE3MOSFET N-CH 40V 32.3A/109A PPAK Vishay Siliconix |
5,185 | - |
|
数据表 |
TrenchFET® Gen IV | PowerPAK® SO-8 | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 32.3A (Ta), 109A (Tc) | 4.5V, 10V | 2.65mOhm @ 15A, 10V | Surface Mount | 2.4V @ 250µA | 61 nC @ 10 V | 40 V | +20V, -16V | 3030 pF @ 20 V | - | - | PowerPAK® SO-8 | - | 5W (Ta), 56.8W (Tc) | -55°C ~ 150°C (TJ) |
|
SI1039X-T1-GE3MOSFET P-CH 12V 870MA SC89-6 Vishay Siliconix |
7,925 | - |
|
数据表 |
TrenchFET® | SOT-563, SOT-666 | Tape & Reel (TR) | Obsolete | P-Channel | MOSFET (Metal Oxide) | 870mA (Ta) | 1.8V, 4.5V | 165mOhm @ 870mA, 4.5V | Surface Mount | 450mV @ 250µA (Min) | 6 nC @ 4.5 V | 12 V | ±8V | - | - | - | SC-89 (SOT-563F) | - | 170mW (Ta) | -55°C ~ 150°C (TJ) |
|
SQ3460EV-T1_GE3MOSFET N-CH 20V 8A 6TSOP Vishay Siliconix |
1,053 | - |
|
数据表 |
TrenchFET® | SOT-23-6 Thin, TSOT-23-6 | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 8A (Tc) | 1.8V, 4.5V | 30mOhm @ 5.1A, 4.5V | Surface Mount | 1V @ 250µA | 14 nC @ 4.5 V | 20 V | ±8V | 1060 pF @ 10 V | - | - | 6-TSOP | - | 3.6W (Tc) | -55°C ~ 175°C (TJ) |
|
IRFR430ATRLPBFMOSFET N-CH 500V 5A DPAK Vishay Siliconix |
4,933 | - |
|
数据表 |
- | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 5A (Tc) | 10V | 1.7Ohm @ 3A, 10V | Surface Mount | 4.5V @ 250µA | 24 nC @ 10 V | 500 V | ±30V | 490 pF @ 25 V | - | - | DPAK | - | 110W (Tc) | -55°C ~ 150°C (TJ) |
|
|
IRFR430ATRRPBFMOSFET N-CH 500V 5A DPAK Vishay Siliconix |
2,923 | - |
|
数据表 |
- | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 5A (Tc) | 10V | 1.7Ohm @ 3A, 10V | Surface Mount | 4.5V @ 250µA | 24 nC @ 10 V | 500 V | ±30V | 490 pF @ 25 V | - | - | DPAK | - | 110W (Tc) | -55°C ~ 150°C (TJ) |
|
|
SQS180ENW-T1_GE3AUTOMOTIVE N-CHANNEL 80 V (D-S) Vishay Siliconix |
2,481 | - |
|
数据表 |
TrenchFET® GenIV | PowerPAK® 1212-8SLW | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 72A (Tc) | 10V | 8.67mOhm @ 10A, 10V | Surface Mount, Wettable Flank | 3.5V @ 250µA | 56 nC @ 10 V | 80 V | ±20V | 3092 pF @ 25 V | AEC-Q101 | - | PowerPAK® 1212-8SLW | Automotive | 119W (Tc) | -55°C ~ 175°C (TJ) |
|
|
IRFR9020TRLPBFMOSFET P-CH 50V 9.9A DPAK Vishay Siliconix |
9,960 | - |
|
数据表 |
- | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Active | P-Channel | MOSFET (Metal Oxide) | 9.9A (Tc) | 10V | 280mOhm @ 5.7A, 10V | Surface Mount | 4V @ 250µA | 14 nC @ 10 V | 50 V | ±20V | 490 pF @ 25 V | - | - | DPAK | - | 42W (Tc) | -55°C ~ 150°C (TJ) |
