| 图片 | 厂商料号 | 库存情况 | 价格 | 数量 | 数据表 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压(最大导通电阻,最小导通电阻) | 导通电阻 (Rds On)(最大值)@ Id, Vgs | 安装类型 | 栅极阈值电压 (Vgs(th))(最大值)@ Id | 栅极电荷 (Qg)(最大值)@ Vgs | 漏极到源极电压 (Vdss) | 栅极电压 (Vgs)(最大值) | 输入电容 (Ciss)(最大值)@ Vds | 认证 | FET 特性 | 供应商设备封装 | 等级 | 功耗(最大值) | 工作温度 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
IRFR1N60ATRRMOSFET N-CH 600V 1.4A DPAK Vishay Siliconix |
7,717 | - |
|
数据表 |
- | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 1.4A (Tc) | 10V | 7Ohm @ 840mA, 10V | Surface Mount | 4V @ 250µA | 14 nC @ 10 V | 600 V | ±30V | 229 pF @ 25 V | - | - | DPAK | - | 36W (Tc) | -55°C ~ 150°C (TJ) |
|
SI6465DQ-T1-E3MOSFET P-CH 8V 8.8A 8TSSOP Vishay Siliconix |
7,157 | - |
|
数据表 |
TrenchFET® | 8-TSSOP (0.173", 4.40mm Width) | Tape & Reel (TR) | Obsolete | P-Channel | MOSFET (Metal Oxide) | 8.8A (Ta) | 1.8V, 4.5V | 12mOhm @ 8.8A, 4.5V | Surface Mount | 450mV @ 250µA (Min) | 80 nC @ 4.5 V | 8 V | ±8V | - | - | - | 8-TSSOP | - | 1.5W (Ta) | -55°C ~ 150°C (TJ) |
|
SIHB10N40D-GE3MOSFET N-CH 400V 10A TO263 Vishay Siliconix |
3,802 | - |
|
数据表 |
- | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 10A (Tc) | 10V | 600mOhm @ 5A, 10V | Surface Mount | 5V @ 250µA | 30 nC @ 10 V | 400 V | ±30V | 526 pF @ 100 V | - | - | TO-263 (D2PAK) | - | 147W (Tc) | -55°C ~ 150°C (TJ) |
|
SI1072X-T1-E3MOSFET N-CH 30V 1.3A SC89-6 Vishay Siliconix |
3,096 | - |
|
数据表 |
TrenchFET® | SOT-563, SOT-666 | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 1.3A (Ta) | 4.5V, 10V | 93mOhm @ 1.3A, 10V | Surface Mount | 3V @ 250µA | 8.3 nC @ 10 V | 30 V | ±20V | 280 pF @ 15 V | - | - | SC-89 (SOT-563F) | - | 236mW (Ta) | -55°C ~ 150°C (TJ) |
|
SIR468DP-T1-GE3MOSFET N-CH 30V 40A PPAK SO-8 Vishay Siliconix |
7,206 | - |
|
数据表 |
TrenchFET® | PowerPAK® SO-8 | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 40A (Tc) | 4.5V, 10V | 5.7mOhm @ 20A, 10V | Surface Mount | 3V @ 250µA | 44 nC @ 10 V | 30 V | ±20V | 1720 pF @ 15 V | - | - | PowerPAK® SO-8 | - | 5W (Ta), 50W (Tc) | -55°C ~ 150°C (TJ) |
|
SIS452DN-T1-GE3MOSFET N-CH 12V 35A PPAK1212-8 Vishay Siliconix |
8,206 | - |
|
数据表 |
TrenchFET® | PowerPAK® 1212-8 | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 35A (Tc) | 4.5V, 10V | 3.25mOhm @ 20A, 10V | Surface Mount | 2.2V @ 250µA | 41 nC @ 10 V | 12 V | ±20V | 1700 pF @ 6 V | - | - | PowerPAK® 1212-8 | - | 3.8W (Ta), 52W (Tc) | -55°C ~ 150°C (TJ) |
|
SIHU4N80E-GE3MOSFET N-CH 800V 4.3A IPAK Vishay Siliconix |
3,544 | - |
|
数据表 |
E | TO-251-3 Long Leads, IPAK, TO-251AB | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 4.3A (Tc) | 10V | 1.27Ohm @ 2A, 10V | Through Hole | 4V @ 250µA | 32 nC @ 10 V | 800 V | ±30V | 622 pF @ 100 V | - | - | IPAK (TO-251) | - | 69W (Tc) | -55°C ~ 150°C (TJ) |
|
IRFBC30PBF-BE3MOSFET N-CH 600V 3.6A TO220AB Vishay Siliconix |
8,310 | - |
|
数据表 |
- | TO-220-3 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 3.6A (Tc) | 10V | 2.2Ohm @ 2.2A, 10V | Through Hole | 4V @ 250µA | 31 nC @ 10 V | 600 V | ±20V | 660 pF @ 25 V | - | - | TO-220AB | - | 74W (Tc) | -55°C ~ 150°C (TJ) |
|
IRFR9310TRRMOSFET P-CH 400V 1.8A DPAK Vishay Siliconix |
5,448 | - |
|
数据表 |
- | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Obsolete | P-Channel | MOSFET (Metal Oxide) | 1.8A (Tc) | 10V | 7Ohm @ 1.1A, 10V | Surface Mount | 4V @ 250µA | 13 nC @ 10 V | 400 V | ±20V | 270 pF @ 25 V | - | - | DPAK | - | 50W (Tc) | -55°C ~ 150°C (TJ) |
|
IRF610LPBFMOSFET N-CH 200V 3.3A I2PAK Vishay Siliconix |
7,224 | - |
|
数据表 |
- | TO-262-3 Long Leads, I2PAK, TO-262AA | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 3.3A (Tc) | 10V | 1.5Ohm @ 2A, 10V | Through Hole | 4V @ 250µA | 8.2 nC @ 10 V | 200 V | ±20V | 140 pF @ 25 V | - | - | I2PAK | - | 3W (Ta), 36W (Tc) | -55°C ~ 150°C (TJ) |