| 图片 | 厂商料号 | 库存情况 | 价格 | 数量 | 数据表 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压(最大导通电阻,最小导通电阻) | 导通电阻 (Rds On)(最大值)@ Id, Vgs | 安装类型 | 栅极阈值电压 (Vgs(th))(最大值)@ Id | 栅极电荷 (Qg)(最大值)@ Vgs | 漏极到源极电压 (Vdss) | 栅极电压 (Vgs)(最大值) | 输入电容 (Ciss)(最大值)@ Vds | 认证 | FET 特性 | 供应商设备封装 | 等级 | 功耗(最大值) | 工作温度 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
SIHD2N80AE-GE3MOSFET N-CH 800V 2.9A DPAK Vishay Siliconix |
3,000 | - |
|
数据表 |
E | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 2.9A (Tc) | 10V | 2.9Ohm @ 500mA, 10V | Surface Mount | 4V @ 250µA | 10.5 nC @ 10 V | 800 V | ±30V | 180 pF @ 100 V | - | - | TO-252AA | - | 62.5W (Tc) | -55°C ~ 150°C (TJ) |
|
IRF9Z14LPBFMOSFET P-CH 60V 6.7A I2PAK Vishay Siliconix |
5,845 | - |
|
数据表 |
- | TO-262-3 Long Leads, I2PAK, TO-262AA | Tube | Active | P-Channel | MOSFET (Metal Oxide) | 6.7A (Tc) | 10V | 500mOhm @ 4A, 10V | Through Hole | 4V @ 250µA | 12 nC @ 10 V | 60 V | ±20V | 270 pF @ 25 V | - | - | I2PAK | - | 3.7W (Ta), 43W (Tc) | -55°C ~ 175°C (TJ) |
|
IRFBC30ALPBFMOSFET N-CH 600V 3.6A I2PAK Vishay Siliconix |
9,553 | - |
|
数据表 |
- | TO-262-3 Long Leads, I2PAK, TO-262AA | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 3.6A (Tc) | 10V | 2.2Ohm @ 2.2A, 10V | Through Hole | 4.5V @ 250µA | 23 nC @ 10 V | 600 V | ±30V | 510 pF @ 25 V | - | - | I2PAK | - | 74W (Tc) | -55°C ~ 150°C (TJ) |
|
SIHP10N40D-E3MOSFET N-CH 400V 10A TO220AB Vishay Siliconix |
5,047 | - |
|
数据表 |
- | TO-220-3 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 10A (Tc) | 10V | 600mOhm @ 5A, 10V | Through Hole | 5V @ 250µA | 30 nC @ 10 V | 400 V | ±30V | 526 pF @ 100 V | - | - | TO-220AB | - | 147W (Tc) | -55°C ~ 150°C (TJ) |
|
IRF610STRRPBFMOSFET N-CH 200V 3.3A D2PAK Vishay Siliconix |
7,589 | - |
|
数据表 |
- | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 3.3A (Tc) | 10V | 1.5Ohm @ 2A, 10V | Surface Mount | 4V @ 250µA | 8.2 nC @ 10 V | 200 V | ±20V | 140 pF @ 25 V | - | - | TO-263 (D2PAK) | - | 3W (Ta), 36W (Tc) | -55°C ~ 150°C (TJ) |
|
IRF614STRRPBFMOSFET N-CH 250V 2.7A D2PAK Vishay Siliconix |
6,204 | - |
|
数据表 |
- | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 2.7A (Tc) | 10V | 2Ohm @ 1.6A, 10V | Surface Mount | 4V @ 250µA | 8.2 nC @ 10 V | 250 V | ±20V | 140 pF @ 25 V | - | - | TO-263 (D2PAK) | - | 3.1W (Ta), 36W (Tc) | -55°C ~ 150°C (TJ) |
|
SQ3456BEV-T1_GE3MOSFET N-CH 30V 7.8A 6TSOP Vishay Siliconix |
6,687 | - |
|
数据表 |
TrenchFET® | SOT-23-6 Thin, TSOT-23-6 | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 7.8A (Tc) | 4.5V, 10V | 35mOhm @ 6A, 10V | Surface Mount | 2.5V @ 250µA | 10 nC @ 10 V | 30 V | ±20V | 370 pF @ 15 V | - | - | 6-TSOP | - | 4W (Tc) | -55°C ~ 175°C (TJ) |
|
SQ3425EV-T1_GE3MOSFET P-CHANNEL 20V 7.4A 6TSOP Vishay Siliconix |
9,273 | - |
|
数据表 |
TrenchFET® | SOT-23-6 Thin, TSOT-23-6 | Tape & Reel (TR) | Obsolete | P-Channel | MOSFET (Metal Oxide) | 7.4A (Tc) | 2.5V, 4.5V | 60mOhm @ 4.7A, 4.5V | Surface Mount | 1.4V @ 250µA | 10.3 nC @ 4.5 V | 20 V | ±12V | 840 pF @ 10 V | AEC-Q101 | - | 6-TSOP | Automotive | 5W (Tc) | -55°C ~ 175°C (TJ) |
|
SQ3427EV-T1_BE3MOSFET P-CH 60V 5.3A 6TSOP Vishay Siliconix |
5,740 | - |
|
数据表 |
TrenchFET® | SOT-23-6 Thin, TSOT-23-6 | Tape & Reel (TR) | Obsolete | P-Channel | MOSFET (Metal Oxide) | 5.3A (Tc) | 4.5V, 10V | 95mOhm @ 4.5A, 10V | Surface Mount | 2.5V @ 250µA | 22 nC @ 10 V | 60 V | ±20V | 1000 pF @ 30 V | AEC-Q101 | - | 6-TSOP | Automotive | 5W (Tc) | -55°C ~ 175°C (TJ) |
|
SQ3425EV-T1_BE3MOSFET P-CH 20V 7.4A 6-TSOP Vishay Siliconix |
6,881 | - |
|
数据表 |
TrenchFET® | SOT-23-6 Thin, TSOT-23-6 | Tape & Reel (TR) | Obsolete | P-Channel | MOSFET (Metal Oxide) | 7.4A (Tc) | 2.5V, 4.5V | 60mOhm @ 4.7A, 4.5V | Surface Mount | 1.4V @ 250µA | 10.3 nC @ 4.5 V | 20 V | ±12V | 840 pF @ 10 V | AEC-Q101 | - | 6-TSOP | Automotive | 5W (Tc) | -55°C ~ 175°C (TJ) |