Vishay Siliconix|场效应晶体管（FETs）、MOSFETs - 页 44

厂商料号	库存情况	价格	数量	数据表	系列	封装/外壳	包装	产品状态	FET 类型	技术	电流 - 连续漏极 (Id) @ 25°C	驱动电压（最大导通电阻，最小导通电阻）	导通电阻 (Rds On)（最大值）@ Id, Vgs	安装类型	栅极阈值电压 (Vgs(th)）（最大值）@ Id	栅极电荷 (Qg)（最大值）@ Vgs	漏极到源极电压 (Vdss)	栅极电压 (Vgs)（最大值）	输入电容 (Ciss)（最大值）@ Vds	认证	FET 特性	供应商设备封装	等级	功耗（最大值）	工作温度
SIS108DN-T1-GE3 MOSFET N-CH 80V 6.7A/16A PPAK Vishay Siliconix	5,000	-	询价单	数据表	TrenchFET® Gen IV	PowerPAK® 1212-8	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	6.7A (Ta), 16A (Tc)	7.5V, 10V	34mOhm @ 4A, 10V	Surface Mount	4V @ 250µA	13 nC @ 10 V	80 V	±20V	545 pF @ 40 V	-	-	PowerPAK® 1212-8	-	3.2W (Ta), 24W (Tc)	-55°C ~ 150°C (TJ)
SISS28DN-T1-GE3 MOSFET N-CH 25V 60A PPAK1212-8S Vishay Siliconix	5,980	-	询价单	数据表	TrenchFET® Gen IV	PowerPAK® 1212-8S	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	60A (Tc)	4.5V, 10V	1.52mOhm @ 15A, 10V	Surface Mount	2V @ 250µA	35 nC @ 4.5 V	25 V	+20V, -16V	3640 pF @ 10 V	-	-	PowerPAK® 1212-8S	-	57W (Tc)	-55°C ~ 150°C (TJ)
SISC06DN-T1-GE3 MOSFET N-CH 30V 27.6A/40A PPAK Vishay Siliconix	5,745	-	询价单	数据表	TrenchFET® Gen IV	PowerPAK® 1212-8	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	27.6A (Ta), 40A (Tc)	4.5V, 10V	2.7mOhm @ 15A, 10V	Surface Mount	2.1V @ 250µA	58 nC @ 10 V	30 V	+20V, -16V	2455 pF @ 15 V	-	-	PowerPAK® 1212-8	-	3.7W (Ta), 46.3W (Tc)	-55°C ~ 150°C (TJ)
SIHFU9220-GE3 MOSFET P-CH 200V 3.6A TO251AA Vishay Siliconix	2,955	-	询价单	数据表	-	TO-251-3 Short Leads, IPAK, TO-251AA	Tube	Active	P-Channel	MOSFET (Metal Oxide)	3.6A (Tc)	10V	1.5Ohm @ 2.2A, 10V	Through Hole	4V @ 250µA	20 nC @ 10 V	200 V	±20V	3400 pF @ 25 V	-	-	TO-251AA	-	2.5W (Ta), 42W (Tc)	-55°C ~ 150°C (TJ)
SIR472DP-T1-GE3 MOSFET N-CH 30V 20A PPAK SO-8 Vishay Siliconix	8,689	-	询价单	数据表	TrenchFET®	PowerPAK® SO-8	Tape & Reel (TR)	Obsolete	N-Channel	MOSFET (Metal Oxide)	20A (Tc)	4.5V, 10V	12mOhm @ 13.8A, 10V	Surface Mount	2.5V @ 250µA	23 nC @ 10 V	30 V	±20V	820 pF @ 15 V	-	-	PowerPAK® SO-8	-	3.9W (Ta), 29.8W (Tc)	-55°C ~ 150°C (TJ)
SI1070X-T1-GE3 MOSFET N-CH 30V 1.2A SC89-6 Vishay Siliconix	5,543	-	询价单	数据表	TrenchFET®	SOT-563, SOT-666	Tape & Reel (TR)	Obsolete	N-Channel	MOSFET (Metal Oxide)	1.2A (Ta)	2.5V, 4.5V	99mOhm @ 1.2A, 4.5V	Surface Mount	1.55V @ 250µA	8.3 nC @ 5 V	30 V	±12V	385 pF @ 15 V	-	-	SC-89 (SOT-563F)	-	236mW (Ta)	-55°C ~ 150°C (TJ)
SI4487DY-T1-GE3 MOSFET P-CH 30V 11.6A 8SO Vishay Siliconix	3,274	-	询价单	数据表	TrenchFET®	8-SOIC (0.154", 3.90mm Width)	Tape & Reel (TR)	Obsolete	P-Channel	MOSFET (Metal Oxide)	11.6A (Tc)	4.5V, 10V	20.5mOhm @ 10A, 10V	Surface Mount	2.5V @ 250µA	36 nC @ 10 V	30 V	±25V	1075 pF @ 15 V	-	-	8-SOIC	-	2.5W (Ta), 5W (Tc)	-55°C ~ 150°C (TJ)
SI4410BDY-T1-E3 MOSFET N-CH 30V 7.5A 8SO Vishay Siliconix	5,742	-	询价单	数据表	TrenchFET®	8-SOIC (0.154", 3.90mm Width)	Tape & Reel (TR)	Obsolete	N-Channel	MOSFET (Metal Oxide)	7.5A (Ta)	4.5V, 10V	13.5mOhm @ 10A, 10V	Surface Mount	3V @ 250µA	20 nC @ 5 V	30 V	±20V	-	-	-	8-SOIC	-	1.4W (Ta)	-55°C ~ 150°C (TJ)
SIR5211DP-T1-GE3 P-CHANNEL 20 V (D-S) MOSFET POWE Vishay Siliconix	5,995	-	询价单	数据表	TrenchFET®	PowerPAK® SO-8	Tape & Reel (TR)	Active	P-Channel	MOSFET (Metal Oxide)	31.2A (Ta), 105A (Tc)	2.5V, 10V	3.2mOhm @ 10A, 10V	Surface Mount	1.5V @ 250µA	158 nC @ 10 V	20 V	±12V	6700 pF @ 10 V	-	-	PowerPAK® SO-8	-	5W (Ta), 56.8W (Tc)	-55°C ~ 150°C (TJ)
SIJA72ADP-T1-GE3 MOSFET N-CH 40V 27.9A/96A PPAK Vishay Siliconix	5,528	-	询价单	数据表	TrenchFET® Gen IV	PowerPAK® SO-8	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	27.9A (Ta), 96A (Tc)	4.5V, 10V	3.42mOhm @ 10A, 10V	Surface Mount	2.4V @ 250µA	50 nC @ 10 V	40 V	+20V, -16V	2530 pF @ 20 V	-	-	PowerPAK® SO-8	-	4.8W (Ta), 56.8W (Tc)	-55°C ~ 150°C (TJ)

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