富聪科技订单满¥1000免运费
关注我们:

场效应晶体管(FETs)、MOSFETs

制造商 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度

全部重置
全部应用
结果
图片 厂商料号 库存情况 价格 数量 数据表 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度
SI6473DQ-T1-E3

SI6473DQ-T1-E3

MOSFET P-CH 20V 6.2A 8TSSOP

Vishay Siliconix

5,111 -
SI6473DQ-T1-E3

数据表

TrenchFET® 8-TSSOP (0.173", 4.40mm Width) Tape & Reel (TR) Obsolete P-Channel MOSFET (Metal Oxide) 6.2A (Ta) 1.8V, 4.5V 12.5mOhm @ 9.5A, 4.5V Surface Mount 450mV @ 250µA (Min) 70 nC @ 5 V 20 V ±8V - - - 8-TSSOP - 1.08W (Ta) -55°C ~ 150°C (TJ)
SI6473DQ-T1-GE3

SI6473DQ-T1-GE3

MOSFET P-CH 20V 6.2A 8TSSOP

Vishay Siliconix

8,908 -
SI6473DQ-T1-GE3

数据表

TrenchFET® 8-TSSOP (0.173", 4.40mm Width) Tape & Reel (TR) Obsolete P-Channel MOSFET (Metal Oxide) 6.2A (Ta) 1.8V, 4.5V 12.5mOhm @ 9.5A, 4.5V Surface Mount 450mV @ 250µA (Min) 70 nC @ 5 V 20 V ±8V - - - 8-TSSOP - 1.08W (Ta) -55°C ~ 150°C (TJ)
SI4413CDY-T1-GE3

SI4413CDY-T1-GE3

MOSFET P-CH 30V 8-SOIC

Vishay Siliconix

7,656 -
SI4413CDY-T1-GE3

数据表

- 8-SOIC (0.154", 3.90mm Width) Tape & Reel (TR) Obsolete P-Channel MOSFET (Metal Oxide) - - - Surface Mount - - 30 V - - - - 8-SOIC - - -
SI4420BDY-T1-GE3

SI4420BDY-T1-GE3

MOSFET N-CH 30V 9.5A 8SO

Vishay Siliconix

1,757 -
SI4420BDY-T1-GE3

数据表

TrenchFET® 8-SOIC (0.154", 3.90mm Width) Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 9.5A (Ta) 4.5V, 10V 8.5mOhm @ 13.5A, 10V Surface Mount 3V @ 250µA 50 nC @ 10 V 30 V ±20V - - - 8-SOIC - 1.4W (Ta) -55°C ~ 150°C (TJ)
SI4812BDY-T1-E3

SI4812BDY-T1-E3

MOSFET N-CH 30V 7.3A 8SO

Vishay Siliconix

7,596 -
SI4812BDY-T1-E3

数据表

LITTLE FOOT® 8-SOIC (0.154", 3.90mm Width) Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 7.3A (Ta) 4.5V, 10V 16mOhm @ 9.5A, 10V Surface Mount 3V @ 250µA 13 nC @ 5 V 30 V ±20V - - - 8-SOIC - 1.4W (Ta) -55°C ~ 150°C (TJ)
SI4812BDY-T1-GE3

SI4812BDY-T1-GE3

MOSFET N-CH 30V 7.3A 8SO

Vishay Siliconix

6,498 -
SI4812BDY-T1-GE3

数据表

LITTLE FOOT® 8-SOIC (0.154", 3.90mm Width) Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 7.3A (Ta) 4.5V, 10V 16mOhm @ 9.5A, 10V Surface Mount 3V @ 250µA 13 nC @ 5 V 30 V ±20V - - - 8-SOIC - 1.4W (Ta) -55°C ~ 150°C (TJ)
SQS182ELNW-T1_GE3

SQS182ELNW-T1_GE3

AUTOMOTIVE N-CHANNEL 80 V (D-S)

Vishay Siliconix

2,736 -
SQS182ELNW-T1_GE3

数据表

TrenchFET® PowerPAK® 1212-8SLW Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 45A (Tc) 4.5V, 10V 13.2mOhm @ 10A, 10V Surface Mount, Wettable Flank 2.5V @ 250µA 39 nC @ 10 V 80 V ±20V 2024 pF @ 25 V AEC-Q101 - PowerPAK® 1212-8SLW Automotive 65W (Tc) -55°C ~ 175°C (TJ)
SUA70090E-E3

SUA70090E-E3

MOSFET N-CH 100V 42.8A TO220

Vishay Siliconix

7,480 -
SUA70090E-E3

数据表

ThunderFET® TO-220-3 Full Pack Tube Obsolete N-Channel MOSFET (Metal Oxide) 42.8A (Tc) 7.5V, 10V 9.3mOhm @ 20A, 10V Through Hole 4V @ 250µA 50 nC @ 10 V 100 V ±20V 1950 pF @ 50 V - - TO-220 Full Pack - 35.7W (Tc) -55°C ~ 150°C (TJ)
SIR403EDP-T1-GE3

SIR403EDP-T1-GE3

MOSFET P-CH 30V 40A PPAK SO-8

Vishay Siliconix

12,434 -
SIR403EDP-T1-GE3

数据表

TrenchFET® PowerPAK® SO-8 Tape & Reel (TR) Active P-Channel MOSFET (Metal Oxide) 40A (Tc) 4.5V, 10V 6.5mOhm @ 13A, 10V Surface Mount 2.8V @ 250µA 153 nC @ 10 V 30 V ±25V 4620 pF @ 15 V - - PowerPAK® SO-8 - 5W (Ta), 56.8W (Tc) -55°C ~ 150°C (TJ)
SIA110DJ-T1-GE3

SIA110DJ-T1-GE3

MOSFET N-CH 100V 5.4A/12A PPAK

Vishay Siliconix

5,330 -
SIA110DJ-T1-GE3

数据表

TrenchFET® Gen IV PowerPAK® SC-70-6 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 5.4A (Ta), 12A (Tc) 7.5V, 10V 55mOhm @ 4A, 10V Surface Mount 4V @ 250µA 13 nC @ 10 V 100 V ±20V 550 pF @ 50 V - - PowerPAK® SC-70-6 - 3.5W (Ta), 19W (Tc) -55°C ~ 150°C (TJ)
共 3677 条记录«上一页1... 3940414243444546...368下一页»
富聪科技

搜索

富聪科技

产品

富聪科技

电话

富聪科技

用户