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场效应晶体管(FETs)、MOSFETs

制造商 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度

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图片 厂商料号 库存情况 价格 数量 数据表 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度
SIHB22N60S-GE3

SIHB22N60S-GE3

MOSFET N-CH 600V 22A D2PAK

Vishay Siliconix

9,544 -
SIHB22N60S-GE3

数据表

S TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 22A (Tc) 10V 190mOhm @ 11A, 10V Surface Mount 4V @ 250µA 110 nC @ 10 V 600 V ±30V 2810 pF @ 25 V - - TO-263 (D2PAK) - 250W (Tc) -55°C ~ 150°C (TJ)
SQM40016EM_GE3

SQM40016EM_GE3

MOSFET N-CH 40V 250A TO263-7

Vishay Siliconix

5,813 -
SQM40016EM_GE3

数据表

TrenchFET® TO-263-7, D2PAK (6 Leads + Tab) Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 250A (Tc) 10V 1mOhm @ 40A, 10V Surface Mount 3.5V @ 250µA 245 nC @ 10 V 40 V ±20V 15000 pF @ 25 V AEC-Q101 - TO-263-7 Automotive 300W (Tc) -55°C ~ 175°C (TJ)
SQJ474EP-T2_GE3

SQJ474EP-T2_GE3

MOSFET N-CH 100V 26A PPAK SO-8

Vishay Siliconix

4,277 -
SQJ474EP-T2_GE3

数据表

TrenchFET® PowerPAK® SO-8 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 26A (Tc) 4.5V, 10V 30mOhm @ 10A, 10V Surface Mount 2.5V @ 250µA 30 nC @ 10 V 100 V ±20V 1100 pF @ 25 V AEC-Q101 - PowerPAK® SO-8 Automotive 45W (Tc) -55°C ~ 175°C (TJ)
SIHU3N50D-E3

SIHU3N50D-E3

MOSFET N-CH 500V 3A TO251AA

Vishay Siliconix

4,443 -
SIHU3N50D-E3

数据表

- TO-251-3 Short Leads, IPAK, TO-251AA Tube Obsolete N-Channel MOSFET (Metal Oxide) 3A (Tc) 10V 3.2Ohm @ 2.5A, 10V Through Hole 5V @ 250µA 12 nC @ 10 V 500 V ±30V 175 pF @ 100 V - - TO-251AA - 69W (Tc) -55°C ~ 150°C (TJ)
SI5857DU-T1-E3

SI5857DU-T1-E3

MOSFET P-CH 20V 6A PPAK CHIPFET

Vishay Siliconix

3,477 -
SI5857DU-T1-E3

数据表

LITTLE FOOT® PowerPAK® ChipFET™ Single Tape & Reel (TR) Obsolete P-Channel MOSFET (Metal Oxide) 6A (Tc) 2.5V, 4.5V 58mOhm @ 3.6A, 4.5V Surface Mount 1.5V @ 250µA 17 nC @ 10 V 20 V ±12V 480 pF @ 10 V - Schottky Diode (Isolated) PowerPAK® ChipFET™ Single - 2.3W (Ta), 10.4W (Tc) -55°C ~ 150°C (TJ)
SI7726DN-T1-GE3

SI7726DN-T1-GE3

MOSFET N-CH 30V 35A PPAK1212-8

Vishay Siliconix

8,878 -
SI7726DN-T1-GE3

数据表

SkyFET®, TrenchFET® PowerPAK® 1212-8 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 35A (Tc) 4.5V, 10V 9.5mOhm @ 10A, 10V Surface Mount 2.6V @ 250µA 43 nC @ 10 V 30 V ±20V 1765 pF @ 15 V - - PowerPAK® 1212-8 - 3.8W (Ta), 52W (Tc) -50°C ~ 150°C (TJ)
SQP10250E_GE3

SQP10250E_GE3

MOSFET N-CH 250V 53A TO220AB

Vishay Siliconix

7,051 -
SQP10250E_GE3

数据表

TrenchFET® TO-220-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 53A (Tc) 7.5V, 10V 30mOhm @ 15A, 10V Through Hole 3.5V @ 250µA 75 nC @ 10 V 250 V ±20V 4050 pF @ 25 V AEC-Q101 - TO-220AB Automotive 250W (Tc) -55°C ~ 175°C (TJ)
SI2341DS-T1-E3

SI2341DS-T1-E3

MOSFET P-CH 30V 2.5A SOT23-3

Vishay Siliconix

7,960 -
SI2341DS-T1-E3

数据表

TrenchFET® TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Obsolete P-Channel MOSFET (Metal Oxide) 2.5A (Ta) 4.5V, 10V 72mOhm @ 2.8A, 10V Surface Mount 3V @ 250µA 15 nC @ 10 V 30 V ±20V 400 pF @ 15 V - - SOT-23-3 (TO-236) - 710mW (Ta) -55°C ~ 150°C (TJ)
SI2341DS-T1-GE3

SI2341DS-T1-GE3

MOSFET P-CH 30V 2.5A SOT23-3

Vishay Siliconix

3,167 -
SI2341DS-T1-GE3

数据表

TrenchFET® TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Obsolete P-Channel MOSFET (Metal Oxide) 2.5A (Ta) 4.5V, 10V 72mOhm @ 2.8A, 10V Surface Mount 3V @ 250µA 15 nC @ 10 V 30 V ±20V 400 pF @ 15 V - - SOT-23-3 (TO-236) - 710mW (Ta) -55°C ~ 150°C (TJ)
SISA66DN-T1-GE3

SISA66DN-T1-GE3

MOSFET N-CH 30V 40A PPAK1212-8

Vishay Siliconix

5,956 -
SISA66DN-T1-GE3

数据表

TrenchFET® Gen IV PowerPAK® 1212-8 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 40A (Tc) 4.5V, 10V 2.3mOhm @ 15A, 10V Surface Mount 2.2V @ 1mA 66 nC @ 10 V 30 V +20V, -16V 3014 pF @ 15 V - - PowerPAK® 1212-8 - 52W (Tc) -55°C ~ 150°C (TJ)
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