| 图片 | 厂商料号 | 库存情况 | 价格 | 数量 | 数据表 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压(最大导通电阻,最小导通电阻) | 导通电阻 (Rds On)(最大值)@ Id, Vgs | 安装类型 | 栅极阈值电压 (Vgs(th))(最大值)@ Id | 栅极电荷 (Qg)(最大值)@ Vgs | 漏极到源极电压 (Vdss) | 栅极电压 (Vgs)(最大值) | 输入电容 (Ciss)(最大值)@ Vds | 认证 | FET 特性 | 供应商设备封装 | 等级 | 功耗(最大值) | 工作温度 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
SQP50P03-07_GE3MOSFET P-CH 30V 50A TO220AB Vishay Siliconix |
8,283 | - |
|
数据表 |
TrenchFET® | TO-220-3 | Tube | Obsolete | P-Channel | MOSFET (Metal Oxide) | 50A (Tc) | 4.5V, 10V | 7mOhm @ 30A, 10V | Through Hole | 2.5V @ 250µA | 155 nC @ 10 V | 30 V | ±20V | 5380 pF @ 25 V | AEC-Q101 | - | TO-220AB | Automotive | 150W (Tc) | -55°C ~ 175°C (TJ) |
|
SQP60N06-15_GE3MOSFET N-CH 60V 56A TO220AB Vishay Siliconix |
9,534 | - |
|
数据表 |
TrenchFET® | TO-220-3 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 56A (Tc) | 10V | 15mOhm @ 30A, 10V | Through Hole | 3.5V @ 250µA | 50 nC @ 10 V | 60 V | ±20V | 2480 pF @ 25 V | AEC-Q101 | - | TO-220AB | Automotive | 107W (Tc) | -55°C ~ 175°C (TJ) |
|
SQP90P06-07L_GE3MOSFET P-CH 60V 120A TO220AB Vishay Siliconix |
4,821 | - |
|
数据表 |
TrenchFET® | TO-220-3 | Tube | Obsolete | P-Channel | MOSFET (Metal Oxide) | 120A (Tc) | 4.5V, 10V | 6.7mOhm @ 30A, 10V | Through Hole | 2.5V @ 250µA | 270 nC @ 10 V | 60 V | ±20V | 14280 pF @ 25 V | AEC-Q101 | - | TO-220AB | Automotive | 300W (Tc) | -55°C ~ 175°C (TJ) |
|
SQV120N06-4M7L_GE3MOSFET N-CH 60V 120A TO262-3 Vishay Siliconix |
9,504 | - |
|
数据表 |
TrenchFET® | TO-262-3 Long Leads, I2PAK, TO-262AA | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 120A (Tc) | 4.5V, 10V | 4.7mOhm @ 30A, 10V | Through Hole | 2.5V @ 250µA | 230 nC @ 10 V | 60 V | ±20V | 8800 pF @ 25 V | AEC-Q101 | - | TO-262-3 | Automotive | 250W (Tc) | -55°C ~ 175°C (TJ) |
|
SQV120N10-3M8_GE3MOSFET N-CH 100V 120A TO262-3 Vishay Siliconix |
7,056 | - |
|
数据表 |
TrenchFET® | TO-262-3 Long Leads, I2PAK, TO-262AA | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 120A (Tc) | 10V | 3.8mOhm @ 20A, 10V | Through Hole | 3.5V @ 250µA | 190 nC @ 10 V | 100 V | ±20V | 7230 pF @ 25 V | AEC-Q101 | - | TO-262-3 | Automotive | 250W (Tc) | -55°C ~ 175°C (TJ) |
|
SUP45P03-09-GE3MOSFET P-CH 30V 45A TO220AB Vishay Siliconix |
4,771 | - |
|
数据表 |
- | TO-220-3 | Tape & Reel (TR) | Obsolete | P-Channel | MOSFET (Metal Oxide) | 45A (Tc) | 4.5V, 10V | 8.7mOhm @ 20A, 10V | Through Hole | 2.5V @ 250µA | 90 nC @ 10 V | 30 V | ±20V | 2700 pF @ 15 V | - | - | TO-220AB | - | 73.5W (Tc) | -55°C ~ 150°C (TJ) |
|
|
SQM40014EM_GE3MOSFET N-CH 40V 200A TO263-7 Vishay Siliconix |
8,686 | - |
|
数据表 |
TrenchFET® | TO-263-7, D2PAK (6 Leads + Tab) | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 200A (Tc) | 10V | 1mOhm @ 35A, 10V | Surface Mount | 3.5V @ 250µA | 250 nC @ 10 V | 40 V | ±20V | 15525 pF @ 25 V | AEC-Q101 | - | TO-263-7 | Automotive | 375W (Tc) | -55°C ~ 175°C (TJ) |
|
SIS444DN-T1-GE3MOSFET N-CH 30V 35A PPAK1212-8 Vishay Siliconix |
9,933 | - |
|
数据表 |
- | PowerPAK® 1212-8 | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 35A (Tc) | 4.5V, 10V | 3.3mOhm @ 10A, 10V | Surface Mount | 2.3V @ 250µA | 102 nC @ 10 V | 30 V | ±20V | 3065 pF @ 15 V | - | - | PowerPAK® 1212-8 | - | 52W (Tc) | -55°C ~ 150°C (TJ) |
|
SIB412DK-T1-GE3MOSFET N-CH 20V 9A PPAK SC75-6 Vishay Siliconix |
8,331 | - |
|
数据表 |
TrenchFET® | PowerPAK® SC-75-6 | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 9A (Tc) | 1.8V, 4.5V | 34mOhm @ 6.6A, 4.5V | Surface Mount | 1V @ 250µA | 10.16 nC @ 5 V | 20 V | ±8V | 535 pF @ 10 V | - | - | PowerPAK® SC-75-6 | - | 2.4W (Ta), 13W (Tc) | -55°C ~ 150°C (TJ) |
|
SIR474DP-T1-RE3MOSFET N-CH 30V 20A PPAK SO-8 Vishay Siliconix |
9,659 | - |
|
数据表 |
TrenchFET® | PowerPAK® SO-8 | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 20A (Tc) | 4.5V, 10V | 9.5mOhm @ 10A, 10V | Surface Mount | 2.2V @ 250µA | 27 nC @ 10 V | 30 V | ±20V | 985 pF @ 15 V | - | - | PowerPAK® SO-8 | - | 29.8W (Tc) | -55°C ~ 150°C (TJ) |