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场效应晶体管（FETs）、MOSFETs
| 图片 | 厂商料号 | 库存情况 | 价格 | 数量 | 数据表 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压（最大导通电阻，最小导通电阻） | 导通电阻 (Rds On)（最大值）@ Id, Vgs | 安装类型 | 栅极阈值电压 (Vgs(th)）（最大值）@ Id | 栅极电荷 (Qg)（最大值）@ Vgs | 漏极到源极电压 (Vdss) | 栅极电压 (Vgs)（最大值） | 输入电容 (Ciss)（最大值）@ Vds | 认证 | FET 特性 | 供应商设备封装 | 等级 | 功耗（最大值） | 工作温度 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
SI2334DS-T1-GE3MOSFET N-CH 30V 4.9A SOT23-3 Vishay Siliconix |
9,860 | - |
|
数据表 |
TrenchFET® | TO-236-3, SC-59, SOT-23-3 | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 4.9A (Tc) | 2.5V, 4.5V | 44mOhm @ 4.2A, 4.5V | Surface Mount | 1V @ 250µA | 10 nC @ 4.5 V | 30 V | ±8V | 634 pF @ 15 V | - | - | SOT-23-3 (TO-236) | - | 1.3W (Ta), 1.7W (Tc) | -55°C ~ 150°C (TJ) |
|
SIHD3N50DT1-GE3MOSFET N-CH 500V 3A DPAK Vishay Siliconix |
6,744 | - |
|
数据表 |
- | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 3A (Tc) | 10V | 3.2Ohm @ 1.5A, 10V | Surface Mount | 5V @ 250µA | 12 nC @ 10 V | 500 V | ±30V | 175 pF @ 100 V | - | - | TO-252AA | - | 69W (Tc) | -55°C ~ 150°C (TJ) |
|
SI5481DU-T1-E3MOSFET P-CH 20V 12A PPAK Vishay Siliconix |
5,773 | - |
|
数据表 |
TrenchFET® | PowerPAK® ChipFET™ Single | Tape & Reel (TR) | Obsolete | P-Channel | MOSFET (Metal Oxide) | 12A (Tc) | 1.8V, 4.5V | 22mOhm @ 6.5A, 4.5V | Surface Mount | 1V @ 250µA | 50 nC @ 8 V | 20 V | ±8V | 1610 pF @ 10 V | - | - | PowerPAK® ChipFET™ Single | - | 3.1W (Ta), 17.8W (Tc) | -55°C ~ 150°C (TJ) |
|
|
SI5485DU-T1-E3MOSFET P-CH 20V 12A PPAK Vishay Siliconix |
6,866 | - |
|
数据表 |
TrenchFET® | PowerPAK® ChipFET™ Single | Tape & Reel (TR) | Obsolete | P-Channel | MOSFET (Metal Oxide) | 12A (Tc) | 2.5V, 4.5V | 25mOhm @ 5.9A, 4.5V | Surface Mount | 1.5V @ 250µA | 42 nC @ 8 V | 20 V | ±12V | 1100 pF @ 10 V | - | - | PowerPAK® ChipFET™ Single | - | 3.1W (Ta), 31W (Tc) | -55°C ~ 150°C (TJ) |
|
SI5486DU-T1-E3MOSFET N-CH 20V 12A CHIPFET Vishay Siliconix |
7,012 | - |
|
数据表 |
TrenchFET® | PowerPAK® ChipFET™ Single | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 12A (Tc) | 1.8V, 4.5V | 15mOhm @ 7.7A, 4.5V | Surface Mount | 1V @ 250µA | 54 nC @ 8 V | 20 V | ±8V | 2100 pF @ 10 V | - | - | PowerPAK® ChipFET™ Single | - | 3.1W (Ta), 31W (Tc) | -55°C ~ 150°C (TJ) |
|
SIA811DJ-T1-E3MOSFET P-CH 20V 4.5A PPAK SC70-6 Vishay Siliconix |
4,461 | - |
|
数据表 |
LITTLE FOOT® | PowerPAK® SC-70-6 Dual | Tape & Reel (TR) | Obsolete | P-Channel | MOSFET (Metal Oxide) | 4.5A (Tc) | 1.8V, 4.5V | 94mOhm @ 2.8A, 4.5V | Surface Mount | 1V @ 250µA | 13 nC @ 8 V | 20 V | ±8V | 355 pF @ 10 V | - | Schottky Diode (Isolated) | PowerPAK® SC-70-6 Dual | - | 1.9W (Ta), 6.5W (Tc) | -55°C ~ 150°C (TJ) |
|
SI5401DC-T1-GE3MOSFET P-CH 20V 5.2A 1206-8 Vishay Siliconix |
7,269 | - |
|
数据表 |
TrenchFET® | 8-SMD, Flat Leads | Tape & Reel (TR) | Obsolete | P-Channel | MOSFET (Metal Oxide) | 5.2A (Ta) | 1.8V, 4.5V | 32mOhm @ 5.2A, 4.5V | Surface Mount | 1V @ 250µA | 25 nC @ 4.5 V | 20 V | ±8V | - | - | - | 1206-8 ChipFET™ | - | 1.3W (Ta) | -55°C ~ 150°C (TJ) |
|
SQJ464EP-T2_GE3MOSFET N-CH 60V 32A PPAK SO-8 Vishay Siliconix |
4,020 | - |
|
数据表 |
TrenchFET® | PowerPAK® SO-8 | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 32A (Tc) | 4.5V, 10V | 17mOhm @ 7.1A, 10V | Surface Mount | 2.5V @ 250µA | 44 nC @ 10 V | 60 V | ±20V | 2086 pF @ 30 V | AEC-Q101 | - | PowerPAK® SO-8 | Automotive | 45W (Tc) | -55°C ~ 175°C (TJ) |
|
SI7792DP-T1-GE3MOSFET N-CH 30V 40.6A/60A PPAK Vishay Siliconix |
9,617 | - |
|
数据表 |
SkyFET®, TrenchFET® Gen III | PowerPAK® SO-8 | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 40.6A (Ta), 60A (Tc) | 4.5V, 10V | 2.1mOhm @ 20A, 10V | Surface Mount | 2.5V @ 250µA | 135 nC @ 10 V | 30 V | ±20V | 4735 pF @ 15 V | - | Schottky Diode (Body) | PowerPAK® SO-8 | - | 6.25W (Ta), 104W (Tc) | -55°C ~ 150°C (TJ) |
|
|
SI7794DP-T1-GE3MOSFET N-CH 30V 28.6A/60A PPAK Vishay Siliconix |
4,879 | - |
|
数据表 |
SkyFET®, TrenchFET® Gen III | PowerPAK® SO-8 | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 28.6A (Ta), 60A (Tc) | 4.5V, 10V | 3.4mOhm @ 20A, 10V | Surface Mount | 2.5V @ 250µA | 72 nC @ 10 V | 30 V | ±20V | 2520 pF @ 15 V | - | Schottky Diode (Body) | PowerPAK® SO-8 | - | 5W (Ta), 48W (Tc) | -55°C ~ 150°C (TJ) |
