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场效应晶体管（FETs）、MOSFETs
| 图片 | 厂商料号 | 库存情况 | 价格 | 数量 | 数据表 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压（最大导通电阻，最小导通电阻） | 导通电阻 (Rds On)（最大值）@ Id, Vgs | 安装类型 | 栅极阈值电压 (Vgs(th)）（最大值）@ Id | 栅极电荷 (Qg)（最大值）@ Vgs | 漏极到源极电压 (Vdss) | 栅极电压 (Vgs)（最大值） | 输入电容 (Ciss)（最大值）@ Vds | 认证 | FET 特性 | 供应商设备封装 | 等级 | 功耗（最大值） | 工作温度 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
SIA456DJ-T3-GE3MOSFET N-CH 200V 1.1A/2.6A PPAK Vishay Siliconix |
4,649 | - |
|
数据表 |
TrenchFET® | PowerPAK® SC-70-6 | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 1.1A (Ta), 2.6A (Tc) | 1.8V, 4.5V | 1.38Ohm @ 750mA, 4.5V | Surface Mount | 1.4V @ 250µA | 14.5 nC @ 10 V | 200 V | ±16V | 350 pF @ 100 V | - | - | PowerPAK® SC-70-6 | - | 3.5W (Ta), 19W (Tc) | -55°C ~ 150°C (TJ) |
|
SIHU3N50D-GE3MOSFET N-CH 500V 3A TO251 Vishay Siliconix |
7,410 | - |
|
数据表 |
- | TO-251-3 Short Leads, IPAK, TO-251AA | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 3A (Tc) | 10V | 3.2Ohm @ 2.5A, 10V | Through Hole | 5V @ 250µA | 12 nC @ 10 V | 500 V | ±30V | 175 pF @ 100 V | - | - | TO-251AA | - | 69W (Tc) | -55°C ~ 150°C (TJ) |
|
|
SIHU3N50DA-GE3MOSFET N-CHANNEL 500V 3A IPAK Vishay Siliconix |
6,634 | - |
|
数据表 |
- | TO-251-3 Long Leads, IPak, TO-251AB | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 3A (Tc) | 10V | 3.2Ohm @ 1.5A, 10V | Through Hole | 4.5V @ 250µA | 12 nC @ 10 V | 500 V | ±30V | 177 pF @ 100 V | - | - | IPAK (TO-251) | - | 69W (Tc) | -55°C ~ 150°C (TJ) |
|
SIHD3N50D-E3MOSFET N-CH 500V 3A DPAK Vishay Siliconix |
5,781 | - |
|
数据表 |
- | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 3A (Tc) | 10V | 3.2Ohm @ 2.5A, 10V | Surface Mount | 5V @ 250µA | 12 nC @ 10 V | 500 V | ±30V | 175 pF @ 100 V | - | - | TO-252AA | - | 69W (Tc) | -55°C ~ 150°C (TJ) |
|
|
SIHD3N50DT4-GE3MOSFET N-CH 500V 3A DPAK Vishay Siliconix |
2,199 | - |
|
数据表 |
D | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 3A (Tc) | 10V | 3.2Ohm @ 1.5A, 10V | Surface Mount | 5V @ 250µA | 12 nC @ 10 V | 500 V | ±30V | 175 pF @ 100 V | - | - | TO-252AA | - | 69W (Tc) | -55°C ~ 150°C (TJ) |
|
|
SIHD3N50DT5-GE3MOSFET N-CH 500V 3A DPAK Vishay Siliconix |
7,651 | - |
|
数据表 |
- | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 3A (Tc) | 10V | 3.2Ohm @ 1.5A, 10V | Surface Mount | 5V @ 250µA | 12 nC @ 10 V | 500 V | ±30V | 175 pF @ 100 V | - | - | TO-252AA | - | 69W (Tc) | -55°C ~ 150°C (TJ) |
|
|
SIHD3N50D-BE3MOSFET N-CH 500V 3A DPAK Vishay Siliconix |
5,661 | - |
|
数据表 |
D | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 3A (Tc) | 10V | 3.2Ohm @ 1.5A, 10V | Surface Mount | 5V @ 250µA | 12 nC @ 10 V | 500 V | ±30V | 175 pF @ 100 V | - | - | TO-252AA | - | 69W (Tc) | -55°C ~ 150°C (TJ) |
|
|
V30365-T1-GE3MOSFET N-CH SMD Vishay Siliconix |
8,564 | - |
|
数据表 |
* | - | Tape & Reel (TR) | Obsolete | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
|
V30391-T1-E3MOSFET N-CH SMD Vishay Siliconix |
6,379 | - |
|
数据表 |
* | - | Tape & Reel (TR) | Obsolete | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
|
V30406-T1-GE3MOSFET N-CH SMD Vishay Siliconix |
4,203 | - |
|
数据表 |
* | - | Tape & Reel (TR) | Obsolete | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
