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场效应晶体管（FETs）、MOSFETs
| 图片 | 厂商料号 | 库存情况 | 价格 | 数量 | 数据表 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压（最大导通电阻，最小导通电阻） | 导通电阻 (Rds On)（最大值）@ Id, Vgs | 安装类型 | 栅极阈值电压 (Vgs(th)）（最大值）@ Id | 栅极电荷 (Qg)（最大值）@ Vgs | 漏极到源极电压 (Vdss) | 栅极电压 (Vgs)（最大值） | 输入电容 (Ciss)（最大值）@ Vds | 认证 | FET 特性 | 供应商设备封装 | 等级 | 功耗（最大值） | 工作温度 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
SI4774DY-T1-GE3MOSFET N-CHANNEL 30V 16A 8SO Vishay Siliconix |
7,207 | - |
|
数据表 |
SkyFET®, TrenchFET® | 8-SOIC (0.154", 3.90mm Width) | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 16A (Tc) | 4.5V, 10V | 9.5mOhm @ 10A, 10V | Surface Mount | 2.3V @ 1mA | 14.3 nC @ 4.5 V | 30 V | ±20V | 1025 pF @ 15 V | - | Schottky Diode (Body) | 8-SOIC | - | 5W (Tc) | -55°C ~ 150°C (TA) |
|
SI7601DN-T1-GE3MOSFET P-CH 20V 16A PPAK1212-8 Vishay Siliconix |
7,232 | - |
|
数据表 |
TrenchFET® | PowerPAK® 1212-8 | Tape & Reel (TR) | Obsolete | P-Channel | MOSFET (Metal Oxide) | 16A (Tc) | 2.5V, 4.5V | 19.2mOhm @ 11A, 4.5V | Surface Mount | 1.6V @ 250µA | 27 nC @ 5 V | 20 V | ±12V | 1870 pF @ 10 V | - | - | PowerPAK® 1212-8 | - | 3.8W (Ta), 52W (Tc) | -50°C ~ 150°C (TJ) |
|
|
SI7601DN-T1-E3MOSFET P-CH 20V 16A PPAK1212-8 Vishay Siliconix |
9,569 | - |
|
数据表 |
TrenchFET® | PowerPAK® 1212-8 | Tape & Reel (TR) | Obsolete | P-Channel | MOSFET (Metal Oxide) | 16A (Tc) | 2.5V, 4.5V | 19.2mOhm @ 11A, 4.5V | Surface Mount | 1.6V @ 250µA | 27 nC @ 5 V | 20 V | ±12V | 1870 pF @ 10 V | - | - | PowerPAK® 1212-8 | - | 3.8W (Ta), 52W (Tc) | -50°C ~ 150°C (TJ) |
|
V961-0007-E3MOSFET N-CH TO-247AC Vishay Siliconix |
7,624 | - |
|
数据表 |
* | - | Tube | Obsolete | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
|
SIS424DN-T1-GE3MOSFET N-CH 20V 35A PPAK 1212-8 Vishay Siliconix |
8,328 | - |
|
数据表 |
TrenchFET® | PowerPAK® 1212-8 | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 35A (Tc) | 4.5V, 10V | 6.4mOhm @ 19.6A, 10V | Surface Mount | 2.5V @ 250µA | 30 nC @ 10 V | 20 V | ±20V | 1200 pF @ 10 V | - | - | PowerPAK® 1212-8 | - | 3.7W (Ta), 39W (Tc) | -55°C ~ 150°C (TJ) |
|
SI3499DV-T1-E3MOSFET P-CH 8V 5.3A 6TSOP Vishay Siliconix |
9,473 | - |
|
数据表 |
TrenchFET® | SOT-23-6 Thin, TSOT-23-6 | Tape & Reel (TR) | Obsolete | P-Channel | MOSFET (Metal Oxide) | 5.3A (Ta) | 1.5V, 4.5V | 23mOhm @ 7A, 4.5V | Surface Mount | 750mV @ 250µA | 42 nC @ 4.5 V | 8 V | ±5V | - | - | - | 6-TSOP | - | 1.1W (Ta) | -55°C ~ 150°C (TJ) |
|
SI8435DB-T1-E1MOSFET P-CH 20V 10A 4MICROFOOT Vishay Siliconix |
9,469 | - |
|
数据表 |
TrenchFET® | 4-XFBGA, CSPBGA | Tape & Reel (TR) | Obsolete | P-Channel | MOSFET (Metal Oxide) | 10A (Tc) | 1.5V, 4.5V | 41mOhm @ 1A, 4.5V | Surface Mount | 1V @ 250µA | 35 nC @ 5 V | 20 V | ±5V | 1600 pF @ 10 V | - | - | 4-Microfoot | - | 2.78W (Ta), 6.25W (Tc) | -55°C ~ 150°C (TJ) |
|
SI5475DC-T1-E3MOSFET P-CH 12V 5.5A 1206-8 Vishay Siliconix |
8,924 | - |
|
数据表 |
TrenchFET® | 8-SMD, Flat Leads | Tape & Reel (TR) | Obsolete | P-Channel | MOSFET (Metal Oxide) | 5.5A (Ta) | 1.8V, 4.5V | 31mOhm @ 5.5A, 4.5V | Surface Mount | 450mV @ 1mA (Min) | 29 nC @ 4.5 V | 12 V | ±8V | - | - | - | 1206-8 ChipFET™ | - | 1.3W (Ta) | -55°C ~ 150°C (TJ) |
|
|
SI5475DC-T1-GE3MOSFET P-CH 12V 5.5A 1206-8 Vishay Siliconix |
6,215 | - |
|
数据表 |
TrenchFET® | 8-SMD, Flat Leads | Tape & Reel (TR) | Obsolete | P-Channel | MOSFET (Metal Oxide) | 5.5A (Ta) | 1.8V, 4.5V | 31mOhm @ 5.5A, 4.5V | Surface Mount | 450mV @ 1mA (Min) | 29 nC @ 4.5 V | 12 V | ±8V | - | - | - | 1206-8 ChipFET™ | - | 1.3W (Ta) | -55°C ~ 150°C (TJ) |
|
SIHFR430ATRR-GE3MOSFET N-CH 500V 5A DPAK Vishay Siliconix |
2,305 | - |
|
数据表 |
- | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 5A (Tc) | 10V | 1.7Ohm @ 3A, 10V | Surface Mount | 4.5V @ 250µA | 24 nC @ 10 V | 500 V | ±30V | 490 pF @ 25 V | - | - | TO-252AA | - | 110W (Tc) | -55°C ~ 150°C (TJ) |
