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场效应晶体管（FETs）、MOSFETs
| 图片 | 厂商料号 | 库存情况 | 价格 | 数量 | 数据表 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压（最大导通电阻，最小导通电阻） | 导通电阻 (Rds On)（最大值）@ Id, Vgs | 安装类型 | 栅极阈值电压 (Vgs(th)）（最大值）@ Id | 栅极电荷 (Qg)（最大值）@ Vgs | 漏极到源极电压 (Vdss) | 栅极电压 (Vgs)（最大值） | 输入电容 (Ciss)（最大值）@ Vds | 认证 | FET 特性 | 供应商设备封装 | 等级 | 功耗（最大值） | 工作温度 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
SIHK100N65E-T1-GE3E SERIES POWER MOSFET 650 V (D- Vishay Siliconix |
6,498 | - |
|
数据表 |
E | 8-PowerBSFN | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 28A (Tc) | 10V | 100mOhm @ 12A, 10V | Surface Mount | 5V @ 250µA | 62 nC @ 10 V | 650 V | ±30V | 2137 pF @ 100 V | - | - | PowerPAK®10 x 12 | - | 184W (Tc) | -55°C ~ 150°C (TJ) |
|
|
SIHP100N65E-GE3E SERIES POWER MOSFET 650 V (D- Vishay Siliconix |
8,627 | - |
|
数据表 |
E | TO-220-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 30A (Tc) | 10V | 100mOhm @ 12A, 10V | Through Hole | 5V @ 250µA | 62 nC @ 10 V | 650 V | ±30V | 2137 pF @ 100 V | - | - | TO-220AB | - | 208W (Tc) | -55°C ~ 150°C (TJ) |
|
|
SIHB100N65E-GE3E SERIES POWER MOSFET 650 V (D- Vishay Siliconix |
2,191 | - |
|
数据表 |
E | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 30A (Tc) | 10V | 100mOhm @ 12A, 10V | Surface Mount | 5V @ 250µA | 62 nC @ 10 V | 650 V | ±30V | 2137 pF @ 100 V | - | - | TO-263 (D2PAK) | - | 208W (Tc) | -55°C ~ 150°C (TJ) |
|
|
SIHH100N65E-T1-GE3E SERIES POWER MOSFET 650 V (D- Vishay Siliconix |
6,404 | - |
|
数据表 |
E | 8-PowerTDFN | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 28A (Tc) | 10V | 100mOhm @ 12A, 10V | Surface Mount | 5V @ 250µA | 62 nC @ 10 V | 650 V | ±30V | 2137 pF @ 100 V | - | - | PowerPAK® 8 x 8 | - | 184W (Tc) | -55°C ~ 150°C (TJ) |
|
|
MXP120A080FL-GE3SILICON CARBIDE MOSFET Vishay Siliconix |
5,041 | - |
|
数据表 |
- | - | Tube | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
|
MXP120A045FW-GE3SILICON CARBIDE MOSFET Vishay Siliconix |
3,025 | - |
|
数据表 |
MaxSiC™ | TO-247-3 | Tube | Active | N-Channel | SiCFET (Silicon Carbide) | 49A (Tc) | 18V, 20V | 56mOhm @ 20A, 20V | Through Hole | 2.38V @ 5mA | 75.6 nC @ 18 V | 1200 V | +22V, -10V | 1958 pF @ 800 V | - | - | TO-247-3L | - | 227W (Tc) | -55°C ~ 150°C (TJ) |
|
|
MXP120A045FL-GE3SILICON CARBIDE MOSFET Vishay Siliconix |
8,452 | - |
|
数据表 |
- | - | Tube | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
SIR788DP-T1-GE3MOSFET N-CH 30V 60A PPAK SO-8 Vishay Siliconix |
5,771 | - |
|
数据表 |
SkyFET®, TrenchFET® | PowerPAK® SO-8 | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 60A (Tc) | 4.5V, 10V | 3.4mOhm @ 20A, 10V | Surface Mount | 2.5V @ 250µA | 75 nC @ 10 V | 30 V | ±20V | 2873 pF @ 15 V | - | Schottky Diode (Body) | PowerPAK® SO-8 | - | 5W (Ta), 48W (Tc) | -55°C ~ 150°C (TJ) |
|
SI8439DB-T1-E1MOSFET P-CH 8V 4MICROFOOT Vishay Siliconix |
8,133 | - |
|
数据表 |
TrenchFET® | 4-UFBGA | Tape & Reel (TR) | Obsolete | P-Channel | MOSFET (Metal Oxide) | 5.9A (Ta) | 1.2V, 4.5V | 25mOhm @ 1.5A, 4.5V | Surface Mount | 800mV @ 250µA | 50 nC @ 4.5 V | 8 V | ±5V | - | - | - | 4-Microfoot | - | 1.1W (Ta), 2.7W (Tc) | -55°C ~ 150°C (TJ) |
|
SIS822DNT-T1-GE3MOSFET N-CH 30V 12A PPAK1212-8 Vishay Siliconix |
4,667 | - |
|
数据表 |
- | PowerPAK® 1212-8 | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 12A (Tc) | 4.5V, 10V | 24mOhm @ 7.8A, 10V | Surface Mount | 2.5V @ 250µA | 12 nC @ 10 V | 30 V | ±20V | 435 pF @ 15 V | - | - | PowerPAK® 1212-8 | - | 15.6W (Tc) | -55°C ~ 150°C (TJ) |
