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场效应晶体管(FETs)、MOSFETs

制造商 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度

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图片 厂商料号 库存情况 价格 数量 数据表 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度
IRFP460BPBF

IRFP460BPBF

MOSFET N-CH 500V 20A TO247AC

Vishay Siliconix

3,528 -
IRFP460BPBF

数据表

- TO-247-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 20A (Tc) 10V 250mOhm @ 10A, 10V Through Hole 4V @ 250µA 170 nC @ 10 V 500 V ±20V 3094 pF @ 100 V - - TO-247AC - 278W (Tc) -55°C ~ 150°C (TJ)
SIB410DK-T1-GE3

SIB410DK-T1-GE3

MOSFET N-CH 30V 9A PPAK SC75-6

Vishay Siliconix

6,115 -
SIB410DK-T1-GE3

数据表

TrenchFET® PowerPAK® SC-75-6 Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 9A (Tc) 1.8V, 4.5V 42mOhm @ 3.8A, 4.5V Surface Mount 1V @ 250µA 15 nC @ 8 V 30 V ±8V 560 pF @ 15 V - - PowerPAK® SC-75-6 - 2.5W (Ta), 13W (Tc) -55°C ~ 150°C (TJ)
SI3407DV-T1-E3

SI3407DV-T1-E3

MOSFET P-CH 20V 8A 6TSOP

Vishay Siliconix

3,331 -
SI3407DV-T1-E3

数据表

TrenchFET® SOT-23-6 Thin, TSOT-23-6 Tape & Reel (TR) Obsolete P-Channel MOSFET (Metal Oxide) 8A (Tc) 2.5V, 4.5V 24mOhm @ 7.5A, 4.5V Surface Mount 1.5V @ 250µA 63 nC @ 10 V 20 V ±12V 1670 pF @ 10 V - - 6-TSOP - 2W (Ta), 4.2W (Tc) -55°C ~ 150°C (TJ)
SI3410DV-T1-E3

SI3410DV-T1-E3

MOSFET N-CH 30V 8A 6TSOP

Vishay Siliconix

9,753 -
SI3410DV-T1-E3

数据表

TrenchFET® SOT-23-6 Thin, TSOT-23-6 Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 8A (Tc) 4.5V, 10V 19.5mOhm @ 5A, 10V Surface Mount 3V @ 250µA 33 nC @ 10 V 30 V ±20V 1295 pF @ 15 V - - 6-TSOP - 2W (Ta), 4.1W (Tc) -55°C ~ 150°C (TJ)
2N6660JTX02

2N6660JTX02

MOSFET N-CH 60V 990MA TO205AD

Vishay Siliconix

6,821 -
2N6660JTX02

数据表

- TO-205AD, TO-39-3 Metal Can Tube Obsolete N-Channel MOSFET (Metal Oxide) 990mA (Tc) 5V, 10V 3Ohm @ 1A, 10V Through Hole 2V @ 1mA - 60 V ±20V 50 pF @ 25 V - - TO-205AD (TO-39) - 725mW (Ta), 6.25W (Tc) -55°C ~ 150°C (TJ)
2N6660JTXL02

2N6660JTXL02

MOSFET N-CH 60V 990MA TO205AD

Vishay Siliconix

8,088 -
2N6660JTXL02

数据表

- TO-205AD, TO-39-3 Metal Can Tube Obsolete N-Channel MOSFET (Metal Oxide) 990mA (Tc) 5V, 10V 3Ohm @ 1A, 10V Through Hole 2V @ 1mA - 60 V ±20V 50 pF @ 25 V - - TO-205AD (TO-39) - 725mW (Ta), 6.25W (Tc) -55°C ~ 150°C (TJ)
2N6660JTXV02

2N6660JTXV02

MOSFET N-CH 60V 990MA TO205AD

Vishay Siliconix

9,980 -
2N6660JTXV02

数据表

- TO-205AD, TO-39-3 Metal Can Tube Obsolete N-Channel MOSFET (Metal Oxide) 990mA (Tc) 5V, 10V 3Ohm @ 1A, 10V Through Hole 2V @ 1mA - 60 V ±20V 50 pF @ 25 V - - TO-205AD (TO-39) - 725mW (Ta), 6.25W (Tc) -55°C ~ 150°C (TJ)
2N6661JAN02

2N6661JAN02

MOSFET N-CH 90V 860MA TO39

Vishay Siliconix

7,635 -
2N6661JAN02

数据表

- TO-205AD, TO-39-3 Metal Can Tube Obsolete N-Channel MOSFET (Metal Oxide) 860mA (Tc) 5V, 10V 4Ohm @ 1A, 10V Through Hole 2V @ 1mA - 90 V ±20V 50 pF @ 25 V - - TO-39 - 725mW (Ta), 6.25W (Tc) -55°C ~ 150°C (TJ)
2N6661JTXL02

2N6661JTXL02

MOSFET N-CH 90V 860MA TO39

Vishay Siliconix

6,235 -
2N6661JTXL02

数据表

- TO-205AD, TO-39-3 Metal Can Tube Obsolete N-Channel MOSFET (Metal Oxide) 860mA (Tc) 5V, 10V 4Ohm @ 1A, 10V Through Hole 2V @ 1mA - 90 V ±20V 50 pF @ 25 V - - TO-39 - 725mW (Ta), 6.25W (Tc) -55°C ~ 150°C (TJ)
2N6661JTXV02

2N6661JTXV02

MOSFET N-CH 90V 860MA TO39

Vishay Siliconix

6,269 -
2N6661JTXV02

数据表

- TO-205AD, TO-39-3 Metal Can Tube Obsolete N-Channel MOSFET (Metal Oxide) 860mA (Tc) 5V, 10V 4Ohm @ 1A, 10V Through Hole 2V @ 1mA - 90 V ±20V 50 pF @ 25 V - - TO-39 - 725mW (Ta), 6.25W (Tc) -55°C ~ 150°C (TJ)
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