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场效应晶体管（FETs）、MOSFETs
| 图片 | 厂商料号 | 库存情况 | 价格 | 数量 | 数据表 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压（最大导通电阻，最小导通电阻） | 导通电阻 (Rds On)（最大值）@ Id, Vgs | 安装类型 | 栅极阈值电压 (Vgs(th)）（最大值）@ Id | 栅极电荷 (Qg)（最大值）@ Vgs | 漏极到源极电压 (Vdss) | 栅极电压 (Vgs)（最大值） | 输入电容 (Ciss)（最大值）@ Vds | 认证 | FET 特性 | 供应商设备封装 | 等级 | 功耗（最大值） | 工作温度 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
SIR878ADP-T1-GE3MOSFET N-CH 100V 40A PPAK SO-8 Vishay Siliconix |
9,097 | - |
|
数据表 |
TrenchFET® | PowerPAK® SO-8 | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 40A (Tc) | 4.5V, 10V | 14mOhm @ 15A, 10V | Surface Mount | 2.8V @ 250µA | 42 nC @ 10 V | 100 V | ±20V | 1275 pF @ 50 V | - | - | PowerPAK® SO-8 | - | 5W (Ta), 44.5W (Tc) | -55°C ~ 150°C (TJ) |
|
SIJK5100E-T1-GE3N-CHANNEL 100 V (D-S) MOSFET Vishay Siliconix |
8,510 | - |
|
数据表 |
TrenchFET® | 8-PowerBSFN | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 74A (Ta), 417A (Tc) | 7.5V, 10V | 1.4mOhm @ 80A, 10V | Surface Mount | 4V @ 250µA | 200 nC @ 10 V | 100 V | ±20V | 11480 pF @ 50 V | - | - | PowerPAK®10 x 12 | - | 17W (Ta), 536W (Tc) | -55°C ~ 175°C (TJ) |
|
|
MXP120A250FW-GE3SILICON CARBIDE MOSFET Vishay Siliconix |
8,641 | - |
|
数据表 |
MaxSiC™ | TO-247-3 | Tube | Active | N-Channel | SiCFET (Silicon Carbide) | 10.5A (Tc) | 18V, 20V | 313mOhm @ 4A, 20V | Through Hole | 3.1V @ 10mA | 20.3 nC @ 18 V | 1200 V | +22V, -10V | 447 pF @ 800 V | - | - | TO-247-3L | - | 56W (Tc) | -55°C ~ 150°C (TJ) |
|
|
SIHP125N65E-GE3E SERIES POWER MOSFET 650 V (D- Vishay Siliconix |
7,601 | - |
|
数据表 |
E | TO-220-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 27A (Tc) | 10V | 120mOhm @ 12A, 10V | Through Hole | 5V @ 250µA | 57 nC @ 10 V | 650 V | ±30V | 1938 pF @ 100 V | - | - | TO-220AB | - | 208W (Tc) | -55°C ~ 150°C (TJ) |
|
|
SIHB125N65E-GE3E SERIES POWER MOSFET 650 V (D- Vishay Siliconix |
5,802 | - |
|
数据表 |
E | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 27A (Tc) | 10V | 120mOhm @ 12A, 10V | Surface Mount | 5V @ 250µA | 57 nC @ 10 V | 650 V | ±30V | 1938 pF @ 100 V | - | - | TO-263 (D2PAK) | - | 208W (Tc) | -55°C ~ 150°C (TJ) |
|
|
SIHH125N65E-T1-GE3E SERIES POWER MOSFET 650 V (D- Vishay Siliconix |
9,506 | - |
|
数据表 |
E | 8-PowerTDFN | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 25A (Tc) | 10V | 120mOhm @ 12A, 10V | Surface Mount | 5V @ 250µA | 57 nC @ 10 V | 650 V | ±30V | 1938 pF @ 100 V | - | - | PowerPAK® 8 x 8 | - | 174W (Tc) | -55°C ~ 150°C (TJ) |
|
|
SIHK125N65E-T1-GE3E SERIES POWER MOSFET 650 V (D- Vishay Siliconix |
3,888 | - |
|
数据表 |
E | 8-PowerBSFN | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 25A (Tc) | 10V | 120mOhm @ 12A, 10V | Surface Mount | 5V @ 250µA | 57 nC @ 10 V | 650 V | ±30V | 1938 pF @ 100 V | - | - | PowerPAK®10 x 12 | - | 174W (Tc) | -55°C ~ 150°C (TJ) |
|
|
MXP120A250FL-GE3SILICON CARBIDE MOSFET Vishay Siliconix |
9,944 | - |
|
数据表 |
- | - | Tube | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
SIHG70N60EF-GE3MOSFET N-CH 600V 70A TO247AC Vishay Siliconix |
7,948 | - |
|
数据表 |
- | TO-247-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 70A (Tc) | 10V | 38mOhm @ 35A, 10V | Through Hole | 4V @ 250µA | 380 nC @ 10 V | 600 V | ±30V | 7500 pF @ 100 V | - | - | TO-247AC | - | 520W (Tc) | -55°C ~ 150°C (TJ) |
|
|
SIHG125N65E-GE3E SERIES POWER MOSFET 650 V (D- Vishay Siliconix |
3,526 | - |
|
数据表 |
E | TO-247-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 27A (Tc) | 10V | 120mOhm @ 12A, 10V | Through Hole | 5V @ 250µA | 57 nC @ 10 V | 650 V | ±30V | 1938 pF @ 100 V | - | - | TO-247AC | - | 208W (Tc) | -55°C ~ 150°C (TJ) |
