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场效应晶体管（FETs）、MOSFETs
| 图片 | 厂商料号 | 库存情况 | 价格 | 数量 | 数据表 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压（最大导通电阻，最小导通电阻） | 导通电阻 (Rds On)（最大值）@ Id, Vgs | 安装类型 | 栅极阈值电压 (Vgs(th)）（最大值）@ Id | 栅极电荷 (Qg)（最大值）@ Vgs | 漏极到源极电压 (Vdss) | 栅极电压 (Vgs)（最大值） | 输入电容 (Ciss)（最大值）@ Vds | 认证 | FET 特性 | 供应商设备封装 | 等级 | 功耗（最大值） | 工作温度 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
IRFD113MOSFET N-CH 60V 800MA 4DIP Vishay Siliconix |
2,644 | - |
|
数据表 |
- | 4-DIP (0.300", 7.62mm) | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 800mA (Tc) | 10V | 800mOhm @ 800mA, 10V | Through Hole | 4V @ 250µA | 7 nC @ 10 V | 60 V | ±20V | 200 pF @ 25 V | - | - | 4-HVMDIP | - | 1W (Tc) | -55°C ~ 150°C (TJ) |
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|
IRFD213MOSFET N-CH 250V 450MA 4DIP Vishay Siliconix |
8,412 | - |
|
数据表 |
- | 4-DIP (0.300", 7.62mm) | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 450mA (Ta) | - | 2Ohm @ 270mA, 10V | Through Hole | 4V @ 250µA | 8.2 nC @ 10 V | 250 V | - | 140 pF @ 25 V | - | - | 4-HVMDIP | - | - | -55°C ~ 150°C (TJ) |
|
|
IRFD9123MOSFET P-CH 100V 1A 4DIP Vishay Siliconix |
8,128 | - |
|
数据表 |
- | 4-DIP (0.300", 7.62mm) | Tube | Obsolete | P-Channel | MOSFET (Metal Oxide) | 1A (Ta) | - | 600mOhm @ 600mA, 10V | Through Hole | 4V @ 250µA | 18 nC @ 10 V | 100 V | - | 390 pF @ 25 V | - | - | 4-HVMDIP | - | - | - |
|
IRFP27N60KMOSFET N-CH 600V 27A TO247-3 Vishay Siliconix |
5,406 | - |
|
数据表 |
- | TO-247-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 27A (Tc) | 10V | 220mOhm @ 16A, 10V | Through Hole | 5V @ 250µA | 180 nC @ 10 V | 600 V | ±30V | 4660 pF @ 25 V | - | - | TO-247AC | - | 500W (Tc) | -55°C ~ 150°C (TJ) |
|
SI4196DY-T1-GE3MOSFET N-CH 20V 8A 8SO Vishay Siliconix |
8,644 | - |
|
数据表 |
TrenchFET® | 8-SOIC (0.154", 3.90mm Width) | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 8A (Tc) | 1.8V, 4.5V | 27mOhm @ 8A, 4.5V | Surface Mount | 1V @ 250µA | 22 nC @ 8 V | 20 V | ±8V | 830 pF @ 10 V | - | - | 8-SOIC | - | 2W (Ta), 4.6W (Tc) | -55°C ~ 150°C (TJ) |
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|
SI4752DY-T1-GE3MOSFET N-CH 30V 25A 8SO Vishay Siliconix |
9,002 | - |
|
数据表 |
SkyFET®, TrenchFET® | 8-SOIC (0.154", 3.90mm Width) | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 25A (Tc) | 4.5V, 10V | 5.5mOhm @ 10A, 10V | Surface Mount | 2.2V @ 1mA | 43 nC @ 10 V | 30 V | ±20V | 1700 pF @ 15 V | - | Schottky Diode (Body) | 8-SOIC | - | 3W (Ta), 6.25W (Tc) | -55°C ~ 150°C (TJ) |
|
SI8469DB-T2-E1MOSFET P-CH 8V 4.6A 4MICROFOOT Vishay Siliconix |
9,082 | - |
|
数据表 |
TrenchFET® | 4-UFBGA | Tape & Reel (TR) | Obsolete | P-Channel | MOSFET (Metal Oxide) | 4.6A (Ta) | 4.5V | 64mOhm @ 1.5A, 4.5V | Surface Mount | 800mV @ 250µA | 17 nC @ 4.5 V | 8 V | ±5V | 900 pF @ 4 V | - | - | 4-Microfoot | - | 780mW (Ta), 1.8W (Tc) | -55°C ~ 150°C (TJ) |
|
SI8805EDB-T2-E1MOSFET P-CH 8V 4MICROFOOT Vishay Siliconix |
8,402 | - |
|
数据表 |
TrenchFET® | 4-XFBGA, CSPBGA | Tape & Reel (TR) | Obsolete | P-Channel | MOSFET (Metal Oxide) | 2.2A (Ta) | 1.2V, 4.5V | 68mOhm @ 1.5A, 4.5V | Surface Mount | 700mV @ 250µA | 10 nC @ 4.5 V | 8 V | ±5V | - | - | - | 4-Microfoot | - | 500mW (Ta) | -55°C ~ 150°C (TJ) |
|
SI8809EDB-T2-E1MOSFET P-CH 20V 1.9A MICROFOOT Vishay Siliconix |
4,764 | - |
|
数据表 |
TrenchFET® | 4-XFBGA | Tape & Reel (TR) | Obsolete | P-Channel | MOSFET (Metal Oxide) | 1.94 (Ta) | 1.8V, 4.5V | 90mOhm @ 1.5A, 4.5V | Surface Mount | 900mV @ 250µA | 15 nC @ 8 V | 20 V | ±8V | - | - | - | 4-Microfoot | - | 500mW (Ta) | -55°C ~ 150°C (TJ) |
|
SIB404DK-T1-GE3MOSFET N-CH 12V 9A PPAK SC75-6 Vishay Siliconix |
4,617 | - |
|
数据表 |
TrenchFET® | PowerPAK® SC-75-6 | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 9A (Tc) | 4.5V | 19mOhm @ 3A, 4.5V | Surface Mount | 800mV @ 250µA | 15 nC @ 4.5 V | 12 V | ±5V | - | - | - | PowerPAK® SC-75-6 | - | 2.5W (Ta), 13W (Tc) | -55°C ~ 150°C (TJ) |
