Vishay Siliconix|场效应晶体管（FETs）、MOSFETs - 页 342

厂商料号	库存情况	价格	数量	数据表	系列	封装/外壳	包装	产品状态	FET 类型	技术	电流 - 连续漏极 (Id) @ 25°C	驱动电压（最大导通电阻，最小导通电阻）	导通电阻 (Rds On)（最大值）@ Id, Vgs	安装类型	栅极阈值电压 (Vgs(th)）（最大值）@ Id	栅极电荷 (Qg)（最大值）@ Vgs	漏极到源极电压 (Vdss)	栅极电压 (Vgs)（最大值）	输入电容 (Ciss)（最大值）@ Vds	认证	FET 特性	供应商设备封装	等级	功耗（最大值）	工作温度
SIDR610DP-T1-RE3 N-CHANNEL 200-V (D-S) MOSFET Vishay Siliconix	7,032	-	询价单	数据表	TrenchFET®	PowerPAK® SO-8	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	8.9A (Ta), 39.6A (Tc)	7.5V, 10V	31.9mOhm @ 10A, 10V	Surface Mount	4V @ 250µA	38 nC @ 10 V	200 V	±20V	1380 pF @ 100 V	-	-	PowerPAK® SO-8DC	-	6.25W (Ta), 125W (Tc)	-55°C ~ 150°C (TJ)
SIDR402DP-T1-GE3 MOSFET N-CH 40V 64.6A/100A PPAK Vishay Siliconix	6,198	-	询价单	数据表	TrenchFET® Gen IV	PowerPAK® SO-8	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	64.6A (Ta), 100A (Tc)	4.5V, 10V	0.88mOhm @ 20A, 10V	Surface Mount	2.3V @ 250µA	165 nC @ 10 V	40 V	+20V, -16V	9100 pF @ 20 V	-	-	PowerPAK® SO-8DC	-	6.25W (Ta), 125W (Tc)	-55°C ~ 150°C (TJ)
SIDR5102EP-T1-RE3 N-CHANNEL 100 V (D-S) 175C MOSFE Vishay Siliconix	5,833	-	询价单	数据表	TrenchFET® Gen V	PowerPAK® SO-8	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	28.2A (Ta), 126A (Tc)	7.5V, 10V	4.1mOhm @ 20A, 10V	Surface Mount	4V @ 250µA	51 nC @ 10 V	100 V	±20V	2850 pF @ 50 V	-	-	PowerPAK® SO-8DC	-	7.5W (Ta), 150W (Tc)	-55°C ~ 175°C (TJ)
SIHD240N65E-GE3 E SERIES POWER MOSFET 650 V (D- Vishay Siliconix	3,717	-	询价单	数据表	E	TO-252-3, DPAK (2 Leads + Tab), SC-63	Tube	Active	N-Channel	MOSFET (Metal Oxide)	16A (Tc)	10V	240mOhm @ 7A, 10V	Surface Mount	5V @ 250µA	29 nC @ 10 V	650 V	±30V	960 pF @ 100 V	-	-	TO-252AA	-	147W (Tc)	-55°C ~ 150°C (TJ)
SUD50P06-15L-T4-E3 MOSFET P-CH 60V 50A TO252 Vishay Siliconix	3,923	-	询价单	数据表	TrenchFET®	TO-252-3, DPAK (2 Leads + Tab), SC-63	Tape & Reel (TR)	Active	P-Channel	MOSFET (Metal Oxide)	50A (Tc)	4.5V, 10V	15mOhm @ 17A, 10V	Surface Mount	3V @ 250µA	165 nC @ 10 V	60 V	±20V	4950 pF @ 25 V	-	-	TO-252AA	-	3W (Ta), 136W (Tc)	-55°C ~ 175°C (TJ)
SUM60030E-GE3 MOSFET N-CH 80V 120A TO263 Vishay Siliconix	7,576	-	询价单	数据表	TrenchFET®	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	120A (Tc)	7.5V, 10V	3.2mOhm @ 30A, 10V	Surface Mount	4V @ 250µA	141 nC @ 10 V	80 V	±20V	7910 pF @ 40 V	-	-	TO-263 (D2PAK)	-	375W (Tc)	-55°C ~ 175°C (TJ)
SIHP240N65E-GE3 E SERIES POWER MOSFET 650 V (D- Vishay Siliconix	2,642	-	询价单	数据表	E	TO-220-3	Tube	Active	N-Channel	MOSFET (Metal Oxide)	16A (Tc)	10V	240mOhm @ 7A, 10V	Through Hole	5V @ 250µA	29 nC @ 10 V	650 V	±30V	960 pF @ 100 V	-	-	TO-220AB	-	147W (Tc)	-55°C ~ 150°C (TJ)
SIRS5700DP-T1-RE3 N-CHANNEL MOSFET Vishay Siliconix	6,012	-	询价单	数据表	TrenchFET® Gen V	PowerPAK® SO-8	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	25A (Ta), 144A (Tc)	7.5V, 10V	5.6mOhm @ 20A, 10V	Surface Mount	4V @ 250µA	110 nC @ 10 V	150 V	±20V	5455 pF @ 75 V	-	-	PowerPAK® SO-8	-	8.3W (Ta), 278W (Tc)	-55°C ~ 150°C (TJ)
SIJH400E-T1-GE3 N-CHANNEL 40 V (D-S) 175 C MOSFE Vishay Siliconix	6,661	-	询价单	数据表	TrenchFET® Gen IV	PowerPAK® 8 x 8	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	57A (Ta), 608A (Tc)	4.5V, 10V	0.52mOhm @ 20A, 10V	Surface Mount	2.4V @ 250µA	330 nC @ 10 V	40 V	+20V, -16V	15050 pF @ 20 V	-	-	PowerPAK® 8 x 8	-	3.3W (Ta), 385W (Tc)	-55°C ~ 175°C (TJ)
SQ2361EES-T1-GE3 MOSFET P-CH 60V 2.5A SOT23-3 Vishay Siliconix	6,583	-	询价单	数据表	TrenchFET®	TO-236-3, SC-59, SOT-23-3	Tape & Reel (TR)	Obsolete	P-Channel	MOSFET (Metal Oxide)	2.5A (Tc)	4.5V, 10V	150mOhm @ 2.4A, 10V	Surface Mount	2.5V @ 250µA	17 nC @ 10 V	60 V	±20V	545 pF @ 30 V	-	-	SOT-23-3 (TO-236)	-	2W (Tc)	-55°C ~ 175°C (TJ)

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