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场效应晶体管(FETs)、MOSFETs

制造商 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度

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图片 厂商料号 库存情况 价格 数量 数据表 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度
SISS40DN-T1-GE3

SISS40DN-T1-GE3

MOSFET N-CH 100V 36.5A PPAK

Vishay Siliconix

8,491 -
SISS40DN-T1-GE3

数据表

ThunderFET® PowerPAK® 1212-8S Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 36.5A (Tc) 6V, 10V 21mOhm @ 10A, 10V Surface Mount 3.5V @ 250µA 24 nC @ 10 V 100 V ±20V 845 pF @ 50 V - - PowerPAK® 1212-8S - 3.7W (Ta), 52W (Tc) -55°C ~ 150°C (TJ)
SIHP22N60E-E3

SIHP22N60E-E3

MOSFET N-CH 600V 21A TO220AB

Vishay Siliconix

5,915 -
SIHP22N60E-E3

数据表

- TO-220-3 Tube Active N-Channel MOSFET (Metal Oxide) 21A (Tc) 10V 180mOhm @ 11A, 10V Through Hole 4V @ 250µA 86 nC @ 10 V 600 V ±30V 1920 pF @ 100 V - - TO-220AB - 227W (Tc) -55°C ~ 150°C (TJ)
SIR580DP-T1-BE3

SIR580DP-T1-BE3

N-CHANNEL 80 V (D-S) MOSFET 150C

Vishay Siliconix

3,933 -
SIR580DP-T1-BE3

数据表

TrenchFET® Gen V PowerPAK® SO-8 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 35.8A (Ta), 146A (Tc) 7.5V, 10V 2.7mOhm @ 20A, 10V Surface Mount 4V @ 250µA 76 nC @ 10 V 80 V ±20V 4100 pF @ 40 V - - PowerPAK® SO-8 - 6.25W (Ta), 104W (Tc) -55°C ~ 150°C (TJ)
SIR514DP-T1-BE3

SIR514DP-T1-BE3

N-CHANNEL 100 V (D-S) MOSFET 150

Vishay Siliconix

8,815 -
SIR514DP-T1-BE3

数据表

TrenchFET® Gen V PowerPAK® SO-8 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 20.8A (Ta), 84.8A (Tc) 7.5V, 10V 5.8mOhm @ 10A, 10V Surface Mount 4V @ 250µA 47 nC @ 10 V 100 V ±20V 2550 pF @ 50 V - - PowerPAK® SO-8 - 5W (Ta), 83.3W (Tc) -55°C ~ 150°C (TJ)
SIR572DP-T1-BE3

SIR572DP-T1-BE3

N-CHANNEL 150 V (D-S) MOSFET 150

Vishay Siliconix

6,279 -
SIR572DP-T1-BE3

数据表

TrenchFET® Gen V PowerPAK® SO-8 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 14.8A (Ta), 59.7A (Tc) 7.5V, 10V 10.8mOhm @ 10A, 10V Surface Mount 4V @ 250µA 54 nC @ 10 V 150 V ±20V 2733 pF @ 75 V - - PowerPAK® SO-8 - 5.7W (Ta), 92.5W (Tc) -55°C ~ 150°C (TJ)
SI4386DY-T1-GE3

SI4386DY-T1-GE3

MOSFET N-CH 30V 11A 8SO

Vishay Siliconix

8,104 -
SI4386DY-T1-GE3

数据表

TrenchFET® 8-SOIC (0.154", 3.90mm Width) Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 11A (Ta) 4.5V, 10V 7mOhm @ 16A, 10V Surface Mount 2.5V @ 250µA 18 nC @ 4.5 V 30 V ±20V - - - 8-SOIC - 1.47W (Ta) -55°C ~ 150°C (TJ)
SQJA61EP-T1_GE3

SQJA61EP-T1_GE3

MOSFET P-CHANNEL 60V 50A TO263

Vishay Siliconix

6,601 -
SQJA61EP-T1_GE3

数据表

TrenchFET® PowerPAK® SO-8 Tape & Reel (TR) Active P-Channel MOSFET (Metal Oxide) 54.5A (Tc) 4.5V, 10V 2.1mOhm @ 10A, 10V Surface Mount 2.5V @ 250µA 75 nC @ 10 V 60 V ±20V 4800 pF @ 25 V AEC-Q101 - PowerPAK® SO-8 Automotive 68W (Tc) -55°C ~ 175°C (TJ)
IRFR220TRPBF-BE3

IRFR220TRPBF-BE3

N-CHANNEL 200V

Vishay Siliconix

3,833 -
IRFR220TRPBF-BE3

数据表

- TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 4.8A (Tc) 10V 800mOhm @ 2.9A, 10V Surface Mount 4V @ 250µA 14 nC @ 10 V 200 V ±20V 260 pF @ 25 V - - TO-252AA - 2.5W (Ta), 42W (Tc) -55°C ~ 150°C (TJ)
SIR570DP-T1-BE3

SIR570DP-T1-BE3

N-CHANNEL 150 V (D-S) 175 C MOSF

Vishay Siliconix

2,696 -
SIR570DP-T1-BE3

数据表

TrenchFET® Gen V PowerPAK® SO-8 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 19A (Ta), 77.4A (Tc) 7.5V, 10V 7.9mOhm @ 20A, 10V Surface Mount 4V @ 250µA 71 nC @ 10 V 150 V ±20V 3740 pF @ 75 V - - PowerPAK® SO-8 - 6.25W (Ta), 104W (Tc) -55°C ~ 150°C (TJ)
SIHF9630S-GE3

SIHF9630S-GE3

MOSFET P-CH 200V 6.5A D2PAK

Vishay Siliconix

5,645 -
SIHF9630S-GE3

数据表

- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Active P-Channel MOSFET (Metal Oxide) 6.5A (Tc) 10V 800mOhm @ 3.9A, 10V Surface Mount 4V @ 250µA 29 nC @ 10 V 200 V ±20V 700 pF @ 25 V - - TO-263 (D2PAK) - 3W (Ta), 74W (Tc) -55°C ~ 150°C (TJ)
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