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场效应晶体管（FETs）、MOSFETs
| 图片 | 厂商料号 | 库存情况 | 价格 | 数量 | 数据表 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压（最大导通电阻，最小导通电阻） | 导通电阻 (Rds On)（最大值）@ Id, Vgs | 安装类型 | 栅极阈值电压 (Vgs(th)）（最大值）@ Id | 栅极电荷 (Qg)（最大值）@ Vgs | 漏极到源极电压 (Vdss) | 栅极电压 (Vgs)（最大值） | 输入电容 (Ciss)（最大值）@ Vds | 认证 | FET 特性 | 供应商设备封装 | 等级 | 功耗（最大值） | 工作温度 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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SIR5808DP-T1-RE3N-CHANNEL 80 V (D-S) MOSFET POWE Vishay Siliconix |
4,722 | - |
|
数据表 |
TrenchFET® | PowerPAK® SO-8 | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 18.8A (Ta), 66.8A (Tc) | 7.5V, 10V | 157mOhm @ 10A, 10V | Surface Mount | 4V @ 250µA | 24 nC @ 10 V | 80 V | ±30V | 1210 pF @ 40 V | - | - | PowerPAK® SO-8 | - | 5.2W (Ta), 65.7W (Tc) | -55°C ~ 150°C (TJ) |
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SIR578DP-T1-BE3N-CHANNEL 150 V (D-S) MOSFET 150 Vishay Siliconix |
7,213 | - |
|
数据表 |
TrenchFET® Gen V | PowerPAK® SO-8 | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 17.2A (Ta), 70.2A (Tc) | 7.5V, 10V | 8.8mOhm @ 20A, 10V | Surface Mount | 4V @ 250µA | 45 nC @ 10 V | 150 V | ±20V | 2540 pF @ 75 V | - | - | PowerPAK® SO-8 | - | 6.25W (Ta), 104W (Tc) | -55°C ~ 150°C (TJ) |
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SIR690DP-T1-RE3MOSFET N-CH 200V 34.4A PPAK SO-8 Vishay Siliconix |
9,056 | - |
|
数据表 |
ThunderFET® | PowerPAK® SO-8 | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 34.4A (Tc) | 7.5V, 10V | 35mOhm @ 20A, 10V | Surface Mount | 4V @ 250µA | 48 nC @ 10 V | 200 V | ±20V | 1935 pF @ 100 V | - | - | PowerPAK® SO-8 | - | 104W (Tc) | -55°C ~ 150°C (TJ) |
|
SIHP105N60EF-GE3MOSFET N-CH 600V 29A TO220AB Vishay Siliconix |
3,291 | - |
|
数据表 |
EF | TO-220-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 29A (Tc) | 10V | 102mOhm @ 13A, 10V | Through Hole | 5V @ 250µA | 53 nC @ 10 V | 600 V | ±30V | 1804 pF @ 100 V | - | - | TO-220AB | - | 208W (Tc) | -55°C ~ 150°C (TJ) |
|
SIHG120N60E-GE3MOSFET N-CH 600V 25A TO247AC Vishay Siliconix |
4,565 | - |
|
数据表 |
E | TO-247-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 25A (Tc) | 10V | 120mOhm @ 12A, 10V | Through Hole | 5V @ 250µA | 45 nC @ 10 V | 600 V | ±30V | 1562 pF @ 100 V | - | - | TO-247AC | - | 179W (Tc) | -55°C ~ 150°C (TJ) |
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SISS5808DN-T1-GE3N-CHANNEL 80 V (D-S) MOSFET POWE Vishay Siliconix |
2,964 | - |
|
数据表 |
TrenchFET® | PowerPAK® 1212-8S | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 18.3A (Ta), 66.6A (Tc) | 7.5V, 10V | 119mOhm @ 3.5A, 10V | Surface Mount | 4V @ 250µA | 24 nC @ 10 V | 80 V | ±20V | 1210 pF @ 40 V | - | - | PowerPAK® 1212-8S | - | 5W (Ta), 65.7W (Tc) | -55°C ~ 150°C (TJ) |
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SIHP33N60E-GE3MOSFET N-CH 600V 33A TO220AB Vishay Siliconix |
8,931 | - |
|
数据表 |
- | TO-220-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 33A (Tc) | 10V | 99mOhm @ 16.5A, 10V | Through Hole | 4V @ 250µA | 150 nC @ 10 V | 600 V | ±30V | 3508 pF @ 100 V | - | - | TO-220AB | - | 278W (Tc) | -55°C ~ 150°C (TJ) |
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SIHP28N60EF-GE3MOSFET N-CH 600V 28A TO220AB Vishay Siliconix |
3,414 | - |
|
数据表 |
- | TO-220-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 28A (Tc) | 10V | 123mOhm @ 14A, 10V | Through Hole | 4V @ 250µA | 120 nC @ 10 V | 600 V | ±30V | 2714 pF @ 100 V | - | - | TO-220AB | - | 250W (Tc) | -55°C ~ 150°C (TJ) |
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IRFR9220PBF-BE3P-CHANNEL 200V Vishay Siliconix |
5,764 | - |
|
数据表 |
- | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Active | P-Channel | MOSFET (Metal Oxide) | 3.6A (Tc) | 10V | 1.5Ohm @ 2.2A, 10V | Surface Mount | 4V @ 250µA | 20 nC @ 10 V | 200 V | ±20V | 340 pF @ 25 V | - | - | TO-252AA | - | 2.5W (Ta), 42W (Tc) | -55°C ~ 150°C (TJ) |
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SQJQ140E-T1_JE3AUTOMOTIVE N-CHANNEL 40V (D-S) Vishay Siliconix |
4,887 | - |
|
数据表 |
TrenchFET® Gen IV | PowerPAK® 8 x 8 | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 701A (Tc) | 10V | 0.53mOhm @ 20A, 10V | Surface Mount | 3.3V @ 250µA | 288 nC @ 10 V | 40 V | ±20V | 17000 pF @ 25 V | AEC-Q101 | - | PowerPAK® 8 x 8 | Automotive | 600W (Tc) | -55°C ~ 175°C (TJ) |
