Vishay Siliconix|场效应晶体管（FETs）、MOSFETs - 页 339

厂商料号	库存情况	价格	数量	数据表	系列	封装/外壳	包装	产品状态	FET 类型	技术	电流 - 连续漏极 (Id) @ 25°C	驱动电压（最大导通电阻，最小导通电阻）	导通电阻 (Rds On)（最大值）@ Id, Vgs	安装类型	栅极阈值电压 (Vgs(th)）（最大值）@ Id	栅极电荷 (Qg)（最大值）@ Vgs	漏极到源极电压 (Vdss)	栅极电压 (Vgs)（最大值）	输入电容 (Ciss)（最大值）@ Vds	认证	FET 特性	供应商设备封装	等级	功耗（最大值）	工作温度
SISA10BDN-T1-GE3 N-CHANNEL 30-V (D-S) MOSFET POWE Vishay Siliconix	7,472	-	询价单	数据表	TrenchFET® Gen IV	PowerPAK® 1212-8	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	26A (Ta), 104A (Tc)	4.5V, 10V	3.6mOhm @ 10A, 10V	Surface Mount	2.4V @ 250µA	36.2 nC @ 10 V	30 V	+20V, -16V	1710 pF @ 15 V	-	-	PowerPAK® 1212-8	-	3.8W (Ta), 63W (Tc)	-55°C ~ 150°C (TJ)
SIR574DP-T1-BE3 N-CHANNEL 150 V (D-S) MOSFET 150 Vishay Siliconix	5,178	-	询价单	数据表	TrenchFET® Gen V	PowerPAK® SO-8	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	12.1A (Ta), 48.1A (Tc)	7.5V, 10V	13.5mOhm @ 10A, 10V	Surface Mount	4V @ 250µA	48 nC @ 10 V	150 V	±20V	2300 pF @ 75 V	-	-	PowerPAK® SO-8	-	5W (Ta), 78W (Tc)	-55°C ~ 150°C (TJ)
SQ3418AEEV-T1_GE3 MOSFET N-CHANNEL 30V 7.8A 6TSOP Vishay Siliconix	9,334	-	询价单	数据表	TrenchFET®	SOT-23-6 Thin, TSOT-23-6	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	8A	4.5V, 10V	35mOhm @ 6A, 10V	Surface Mount	2.5V @ 250µA	3.5 nC @ 4.5 V	40 V	±20V	528 pF @ 25 V	-	-	6-TSOP	-	5W (Tc)	-55°C ~ 175°C (TJ)
SIJ5623DP-T1-GE3 P-CHANNEL 60 V (D-S) MOSFET 150C Vishay Siliconix	8,975	-	询价单	数据表	-	PowerPAK® SO-8	Tape & Reel (TR)	Active	P-Channel	MOSFET (Metal Oxide)	9.3A (Ta), 26.1A (Tc)	4.5V, 10V	24mOhm @ 10A, 10V	Surface Mount	2.6V @ 250µA	33 nC @ 10 V	60 V	±20V	1575 pF @ 30 V	-	-	PowerPAK® SO-8	-	4.1W (Ta), 32.9W (Tc)	-55°C ~ 150°C (TJ)
SIHA180N60E-GE3 MOSFET N-CH 600V 19A TO220 Vishay Siliconix	2,317	-	询价单	数据表	E	TO-220-3 Full Pack	Tube	Active	N-Channel	MOSFET (Metal Oxide)	19A (Tc)	10V	180mOhm @ 9.5A, 10V	Through Hole	5V @ 250µA	33 nC @ 10 V	600 V	±30V	1085 pF @ 100 V	-	-	TO-220 Full Pack	-	33W (Tc)	-55°C ~ 150°C (TJ)
SISS5708DN-T1-BE3 N-CHANNEL 150 V (D-S) MOSFET 150 Vishay Siliconix	8,791	-	询价单	数据表	TrenchFET® Gen V	PowerPAK® 1212-8S	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	9.3A (Ta), 33.8A (Tc)	7.5V, 10V	23mOhm @ 10A, 10V	Surface Mount	4V @ 250µA	20 nC @ 10 V	150 V	±20V	975 pF @ 75 V	-	-	PowerPAK® 1212-8S	-	5W (Ta), 65.7W (Tc)	-55°C ~ 150°C (TJ)
SIHP186N60EF-GE3 MOSFET N-CH 600V 18A TO220AB Vishay Siliconix	9,844	-	询价单	数据表	EF	TO-220-3	Tube	Active	N-Channel	MOSFET (Metal Oxide)	18A (Tc)	10V	193mOhm @ 9.5A, 10V	Through Hole	5V @ 250µA	32 nC @ 10 V	600 V	±30V	1081 pF @ 100 V	-	-	TO-220AB	-	156W (Tc)	-55°C ~ 150°C (TJ)
SIR516DP-T1-BE3 N-CHANNEL 100 V (D-S) MOSFET 150 Vishay Siliconix	8,291	-	询价单	数据表	TrenchFET® Gen V	PowerPAK® SO-8	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	16.8A (Ta), 63.7A (Tc)	7.5V, 10V	8mOhm @ 10A, 10V	Surface Mount	4V @ 250µA	27 nC @ 10 V	100 V	±20V	1920 pF @ 50 V	-	-	PowerPAK® SO-8	-	5W (Ta), 71.4W (Tc)	-55°C ~ 150°C (TJ)
SIR582DP-T1-BE3 N-CHANNEL 80 V (D-S) MOSFET 150 Vishay Siliconix	9,954	-	询价单	数据表	TrenchFET® Gen V	PowerPAK® SO-8	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	28.9A (Ta), 116A (Tc)	7.5V, 10V	3.4mOhm @ 15A, 10V	Surface Mount	4V @ 250µA	67 nC @ 10 V	80 V	±20V	3360 pF @ 40 V	-	-	PowerPAK® SO-8	-	5.6W (Ta), 92.5W (Tc)	-55°C ~ 150°C (TJ)
SIR5802DP-T1-BE3 N-CHANNEL 80 V (D-S) MOSFET 150C Vishay Siliconix	8,618	-	询价单	数据表	TrenchFET® Gen V	PowerPAK® SO-8	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	33.6A (Ta), 137.5A (Tc)	7.5V, 10V	2.9mOhm @ 20A, 10V	Surface Mount	4V @ 250µA	60 nC @ 10 V	80 V	±20V	3020 pF @ 40 V	-	-	PowerPAK® SO-8	-	6.25W (Ta), 104W (Tc)	-55°C ~ 150°C (TJ)

共 3677 条记录«上一页 1... 335 336 337 338339340 341 342...368 下一页»