Vishay Siliconix|场效应晶体管（FETs）、MOSFETs - 页 338

厂商料号	库存情况	价格	数量	数据表	系列	封装/外壳	包装	产品状态	FET 类型	技术	电流 - 连续漏极 (Id) @ 25°C	驱动电压（最大导通电阻，最小导通电阻）	导通电阻 (Rds On)（最大值）@ Id, Vgs	安装类型	栅极阈值电压 (Vgs(th)）（最大值）@ Id	栅极电荷 (Qg)（最大值）@ Vgs	漏极到源极电压 (Vdss)	栅极电压 (Vgs)（最大值）	输入电容 (Ciss)（最大值）@ Vds	认证	FET 特性	供应商设备封装	等级	功耗（最大值）	工作温度
SISS26LDN-T1-UE3 N-CHANNEL 60 V (D-S) 150C MOSFET Vishay Siliconix	6,561	-	询价单	数据表	TrenchFET® Gen IV	PowerPAK® 1212-8S	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	23.7A (Ta), 81.2A (Tc)	4.5V, 10V	4.3mOhm @ 15A, 10V	Surface Mount	2.5V @ 250µA	48 nC @ 10 V	60 V	±20V	1980 pF @ 30 V	-	-	PowerPAK® 1212-8S	-	4.8W (Ta), 57W (Tc)	-55°C ~ 150°C (TJ)
SIRA60DDP-T1-UE3 N-CHANNEL 30 V (D-S) 150C MOSFET Vishay Siliconix	6,067	-	询价单	数据表	TrenchFET® Gen IV	PowerPAK® SO-8	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	65A (Ta), 241A (Tc)	4.5V, 10V	0.9mOhm @ 20A, 10V	Surface Mount	2.2V @ 250µA	125 nC @ 10 V	30 V	+20V, -16V	7975 pF @ 15 V	-	-	PowerPAK® SO-8	-	5.7W (Ta), 78W (Tc)	-55°C ~ 150°C (TJ)
SIRA62DDP-T1-UE3 N-CHANNEL 30 V (D-S) MOSFET 150C Vishay Siliconix	6,444	-	询价单	数据表	TrenchFET® Gen IV	PowerPAK® SO-8	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	51A (Ta), 191A (Tc)	4.5V, 10V	1.22Ohm @ 15A, 10V	Surface Mount	2.2V @ 250µA	70 nC @ 10 V	30 V	+20V, -16V	4344 pF @ 15 V	-	-	PowerPAK® SO-8	-	5W (Ta), 71W (Tc)	-55°C ~ 150°C (TJ)
SISS588DN-T1-BE3 N-CHANNEL 80 V (D-S) MOSFET 150 Vishay Siliconix	5,739	-	询价单	数据表	TrenchFET® Gen V	PowerPAK® 1212-8S	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	16.9A (Ta), 58.1A (Tc)	7.5V, 10V	8mOhm @ 10A, 10V	Surface Mount	4V @ 250µA	28.5 nC @ 10 V	80 V	±20V	1380 pF @ 40 V	-	-	PowerPAK® 1212-8S	-	4.8W (Ta), 56.8W (Tc)	-55°C ~ 150°C (TJ)
SIR576DP-T1-BE3 N-CHANNEL 150 V (D-S) MOSFET 150 Vishay Siliconix	7,555	-	询价单	数据表	TrenchFET® Gen V	PowerPAK® SO-8	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	11.1A (Ta), 42.2A (Tc)	7.5V, 10V	16mOhm @ 10A, 10V	Surface Mount	4V @ 250µA	38 nC @ 10 V	150 V	±20V	1870 pF @ 75 V	-	-	PowerPAK® SO-8	-	5W (Ta), 71.4W (Tc)	-55°C ~ 150°C (TJ)
SIHP30N60E-E3 MOSFET N-CH 600V 29A TO220AB Vishay Siliconix	2,193	-	询价单	数据表	-	TO-220-3	Tube	Active	N-Channel	MOSFET (Metal Oxide)	29A (Tc)	10V	125mOhm @ 15A, 10V	Through Hole	4V @ 250µA	130 nC @ 10 V	600 V	±30V	2600 pF @ 100 V	-	-	TO-220AB	-	250W (Tc)	-55°C ~ 150°C (TJ)
SIHG30N60E-E3 MOSFET N-CH 600V 29A TO247AC Vishay Siliconix	8,540	-	询价单	数据表	-	TO-247-3	Tube	Active	N-Channel	MOSFET (Metal Oxide)	29A (Tc)	10V	125mOhm @ 15A, 10V	Through Hole	4V @ 250µA	130 nC @ 10 V	600 V	±30V	2600 pF @ 100 V	-	-	TO-247AC	-	250W (Tc)	-55°C ~ 150°C (TJ)
SIHP15N60E-E3 MOSFET N-CH 600V 15A TO220AB Vishay Siliconix	3,208	-	询价单	数据表	-	TO-220-3	Tube	Active	N-Channel	MOSFET (Metal Oxide)	15A (Tc)	10V	280mOhm @ 8A, 10V	Through Hole	4V @ 250µA	78 nC @ 10 V	600 V	±30V	1350 pF @ 100 V	-	-	TO-220AB	-	180W (Tc)	-55°C ~ 150°C (TJ)
SIRA60DP-T1-UE3 N-CHANNEL 30 V (D-S) MOSFET 150 Vishay Siliconix	7,276	-	询价单	数据表	TrenchFET® Gen IV	PowerPAK® SO-8	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	56A (Ta), 100A (Tc)	4.5V, 10V	0.94mOhm @ 20A, 10V	Surface Mount	2.2V @ 250µA	125 nC @ 10 V	30 V	+20V, -16V	7650 pF @ 15 V	-	-	PowerPAK® SO-8	-	5W (Ta), 57W (Tc)	-55°C ~ 150°C (TJ)
SIJ4409DP-T1-GE3 P-CHANNEL 40 V (D-S) MOSFET 150C Vishay Siliconix	8,755	-	询价单	数据表	-	PowerPAK® SO-8	Tape & Reel (TR)	Active	P-Channel	MOSFET (Metal Oxide)	15.5A (Ta), 43.6A (Tc)	4.5V, 10V	9.6mOhm @ 15A, 10V	Surface Mount	2.3V @ 250µA	126 nC @ 10 V	40 V	±20V	5670 pF @ 20 V	-	-	PowerPAK® SO-8	-	2.6W (Ta), 32.8W (Tc)	-55°C ~ 150°C (TJ)

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