Vishay Siliconix|场效应晶体管（FETs）、MOSFETs - 页 337

厂商料号	库存情况	价格	数量	数据表	系列	封装/外壳	包装	产品状态	FET 类型	技术	电流 - 连续漏极 (Id) @ 25°C	驱动电压（最大导通电阻，最小导通电阻）	导通电阻 (Rds On)（最大值）@ Id, Vgs	安装类型	栅极阈值电压 (Vgs(th)）（最大值）@ Id	栅极电荷 (Qg)（最大值）@ Vgs	漏极到源极电压 (Vdss)	栅极电压 (Vgs)（最大值）	输入电容 (Ciss)（最大值）@ Vds	认证	FET 特性	供应商设备封装	等级	功耗（最大值）	工作温度
SQ2361CEES-T1_GE3 MOSFET P-CH 60V 2.8A SOT23-3 Vishay Siliconix	9,754	-	询价单	数据表	-	TO-236-3, SC-59, SOT-23-3	Tape & Reel (TR)	Active	P-Channel	MOSFET (Metal Oxide)	2.8A (Tc)	4.5V, 10V	170mOhm @ 2.4A, 10V	Surface Mount	2.5V @ 250µA	15 nC @ 10 V	60 V	±20V	620 pF @ 30 V	-	-	SOT-23-3 (TO-236)	-	2W (Tc)	-55°C ~ 175°C (TJ)
IRFR420PBF-BE3 N-CHANNEL 500V Vishay Siliconix	3,728	-	询价单	数据表	-	TO-252-3, DPAK (2 Leads + Tab), SC-63	Tube	Active	N-Channel	MOSFET (Metal Oxide)	2.4A (Tc)	10V	3Ohm @ 1.4A, 10V	Surface Mount	4V @ 250µA	19 nC @ 10 V	500 V	±20V	360 pF @ 25 V	-	-	TO-252AA	-	2.5W (Ta), 42W (Tc)	-55°C ~ 150°C (TJ)
SQ2310CES-T1_GE3 MOSFET N-CH 20V 6A TO236 Vishay Siliconix	3,697	-	询价单	数据表	TrenchFET®	TO-236-3, SC-59, SOT-23-3	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	6A (Tc)	1.8V, 4.5V	30mOhm @ 5A, 4.5V	Surface Mount	1V @ 250µA	8.5 nC @ 4.5 V	20 V	±8V	590 pF @ 10 V	AEC-Q101	-	SOT-23-3 (TO-236)	Automotive	2W (Tc)	-55°C ~ 175°C (TJ)
SQJ118EP-T1_GE3 AUTOMOTIVE N-CHANNEL 100V (D-S) Vishay Siliconix	8,108	-	询价单	数据表	TrenchFET® Gen IV	PowerPAK® SO-8	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	38A (Tc)	10V	19.7mOhm @ 15A, 10V	Surface Mount	3.5V @ 250µA	47 nC @ 10 V	100 V	±20V	2930 pF @ 25 V	-	-	PowerPAK® SO-8	-	500W (Tc)	-55°C ~ 175°C (TJ)
IRF820ALPBF MOSFET N-CH 500V 2.5A I2PAK Vishay Siliconix	5,210	-	询价单	数据表	-	TO-262-3 Long Leads, I2PAK, TO-262AA	Tube	Active	N-Channel	MOSFET (Metal Oxide)	2.5A (Tc)	10V	3Ohm @ 1.5A, 10V	Through Hole	4.5V @ 250µA	17 nC @ 10 V	500 V	±30V	340 pF @ 25 V	-	-	I2PAK	-	50W (Tc)	-55°C ~ 150°C (TJ)
SIR5810DP-T1-RE3 N-CHANNEL 80 V (D-S) MOSFET 150C Vishay Siliconix	7,724	-	询价单	数据表	TrenchFET® Gen V	PowerPAK® SO-8	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	15.5A (Ta), 53.3A (Tc)	7.5V, 10V	10mOhm @ 10A, 10V	Surface Mount	4V @ 250µA	18.5 nC @ 10 V	80 V	±20V	900 pF @ 40 V	-	-	PowerPAK® SO-8	-	3W (Ta), 56.8W (Tc)	-55°C ~ 150°C (TJ)
SQS110ENW-T1_GE3 AUTOMOTIVE N-CHANNEL 100V (D-S) Vishay Siliconix	4,991	-	询价单	数据表	TrenchFET® Gen IV	8-PowerVDFN	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	57A (Tc)	10V	13.2mOhm @ 10A, 10V	Surface Mount, Wettable Flank	4V @ 250µA	51 nC @ 10 V	100 V	±20V	3449 pF @ 25 V	-	-	PowerPAK® 1212-8SLW	-	119W (Tc)	-55°C ~ 175°C (TJ)
SISS5810DN-T1-GE3 N-CHANNEL 80 V (D-S) MOSFET 150C Vishay Siliconix	5,943	-	询价单	数据表	TrenchFET® Gen V	PowerPAK® 1212-8S	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	13.9A (Ta), 51A (Tc)	7.5V, 10V	10mOhm @ 10A, 10V	Surface Mount	4V @ 250µA	18.5 nC @ 10 V	80 V	±20V	900 pF @ 40 V	-	-	PowerPAK® 1212-8S	-	3.9W (Ta), 52W (Tc)	-55°C ~ 150°C (TJ)
SIR5208DP-T1-RE3 N-CHANNEL 20 V (D-S) MOSFET 150C Vishay Siliconix	4,366	-	询价单	数据表	TrenchFET® Gen V	PowerPAK® SO-8	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	48A (Ta), 165A (Tc)	2.5V, 8V	1.3mOhm @ 10A, 8V	Surface Mount	1.3V @ 250µA	68 nC @ 10 V	20 V	+8V, -7V	4100 pF @ 10 V	-	-	PowerPAK® SO-8	-	4.8W (Ta), 56.8W (Tc)	-55°C ~ 150°C (TJ)
SIHFZ48S-GE3 MOSFET N-CH 60V 50A D2PAK Vishay Siliconix	2,002	-	询价单	数据表	-	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Tube	Active	N-Channel	MOSFET (Metal Oxide)	50A (Tc)	10V	18mOhm @ 43A, 10V	Surface Mount	4V @ 250µA	110 nC @ 10 V	60 V	±20V	2400 pF @ 25 V	-	-	TO-263 (D2PAK)	-	3.7W (Ta), 190W (Tc)	-55°C ~ 175°C (TJ)

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