Vishay Siliconix|场效应晶体管（FETs）、MOSFETs - 页 29

厂商料号	库存情况	价格	数量	数据表	系列	封装/外壳	包装	产品状态	FET 类型	技术	电流 - 连续漏极 (Id) @ 25°C	驱动电压（最大导通电阻，最小导通电阻）	导通电阻 (Rds On)（最大值）@ Id, Vgs	安装类型	栅极阈值电压 (Vgs(th)）（最大值）@ Id	栅极电荷 (Qg)（最大值）@ Vgs	漏极到源极电压 (Vdss)	栅极电压 (Vgs)（最大值）	输入电容 (Ciss)（最大值）@ Vds	认证	FET 特性	供应商设备封装	等级	功耗（最大值）	工作温度
SI5456DU-T1-GE3 MOSFET N-CH 20V 12A CHIPFET Vishay Siliconix	8,669	-	询价单	数据表	TrenchFET®	PowerPAK® ChipFET™ Single	Tape & Reel (TR)	Obsolete	N-Channel	MOSFET (Metal Oxide)	12A (Tc)	4.5V, 10V	10mOhm @ 9.3A, 10V	Surface Mount	2.5V @ 250µA	30 nC @ 10 V	20 V	±20V	1200 pF @ 10 V	-	-	PowerPAK® ChipFET™ Single	-	3.1W (Ta), 31W (Tc)	-55°C ~ 150°C (TJ)
SI5415EDU-T1-GE3 MOSFET P-CH 20V 25A PPAK Vishay Siliconix	5,204	-	询价单	数据表	TrenchFET®	PowerPAK® ChipFET™ Single	Tape & Reel (TR)	Obsolete	P-Channel	MOSFET (Metal Oxide)	25A (Tc)	1.8V, 4.5V	9.8mOhm @ 10A, 4.5V	Surface Mount	1V @ 250µA	120 nC @ 8 V	20 V	±8V	4300 pF @ 10 V	-	-	PowerPAK® ChipFet Single	-	3.1W (Ta), 31W (Tc)	-50°C ~ 150°C (TJ)
SIS612EDNT-T1-GE3 MOSFET N-CH 20V 50A PPAK1212-8S Vishay Siliconix	4,854	-	询价单	数据表	TrenchFET®	PowerPAK® 1212-8S	Tape & Reel (TR)	Obsolete	N-Channel	MOSFET (Metal Oxide)	50A (Tc)	2.5V, 4.5V	3.9mOhm @ 14A, 4.5V	Surface Mount	1.2V @ 1mA	70 nC @ 10 V	20 V	±12V	2060 pF @ 10 V	-	-	PowerPAK® 1212-8S	-	3.7W (Ta), 52W (Tc)	-55°C ~ 150°C (TJ)
IRLU120PBF MOSFET N-CH 100V 7.7A TO251AA Vishay Siliconix	8,216	-	询价单	数据表	-	TO-251-3 Short Leads, IPAK, TO-251AA	Tube	Obsolete	N-Channel	MOSFET (Metal Oxide)	7.7A (Tc)	4V, 5V	270mOhm @ 4.6A, 5V	Through Hole	2V @ 250µA	12 nC @ 5 V	100 V	±10V	490 pF @ 25 V	-	-	TO-251AA	-	2.5W (Ta), 42W (Tc)	-55°C ~ 150°C (TJ)
SIHD6N62E-GE3 MOSFET N-CH 620V 6A DPAK Vishay Siliconix	2,670	-	询价单	数据表	-	TO-252-3, DPAK (2 Leads + Tab), SC-63	Tube	Active	N-Channel	MOSFET (Metal Oxide)	6A (Tc)	10V	900mOhm @ 3A, 10V	Surface Mount	4V @ 250µA	34 nC @ 10 V	-	±30V	578 pF @ 100 V	-	-	TO-252AA	-	78W (Tc)	-55°C ~ 150°C (TJ)
IRLR120TRRPBF MOSFET N-CH 100V 7.7A DPAK Vishay Siliconix	4,823	-	询价单	数据表	-	TO-252-3, DPAK (2 Leads + Tab), SC-63	Tape & Reel (TR)	Obsolete	N-Channel	MOSFET (Metal Oxide)	7.7A (Tc)	4V, 5V	270mOhm @ 4.6A, 5V	Surface Mount	2V @ 250µA	12 nC @ 5 V	100 V	±10V	490 pF @ 25 V	-	-	DPAK	-	2.5W (Ta), 42W (Tc)	-55°C ~ 150°C (TJ)
SI3447CDV-T1-GE3 MOSFET P-CH 12V 7.8A 6TSOP Vishay Siliconix	9,178	-	询价单	数据表	TrenchFET®	SOT-23-6 Thin, TSOT-23-6	Tape & Reel (TR)	Obsolete	P-Channel	MOSFET (Metal Oxide)	7.8A (Tc)	1.8V, 4.5V	36mOhm @ 6.3A, 4.5V	Surface Mount	1V @ 250µA	30 nC @ 8 V	12 V	±8V	910 pF @ 6 V	-	-	6-TSOP	-	2W (Ta), 3W (Tc)	-55°C ~ 150°C (TJ)
SI7621DN-T1-GE3 MOSFET P-CH 20V 4A PPAK1212-8 Vishay Siliconix	4,026	-	询价单	数据表	TrenchFET®	PowerPAK® 1212-8	Tape & Reel (TR)	Obsolete	P-Channel	MOSFET (Metal Oxide)	4A (Tc)	2.5V, 4.5V	90mOhm @ 3.9A, 4.5V	Surface Mount	2V @ 250µA	6.2 nC @ 5 V	20 V	±12V	300 pF @ 10 V	-	-	PowerPAK® 1212-8	-	3.1W (Ta), 12.5W (Tc)	-55°C ~ 150°C (TJ)
IRFD9110PBF MOSFET P-CH 100V 700MA 4DIP Vishay Siliconix	9,064	-	询价单	数据表	-	4-DIP (0.300", 7.62mm)	Bulk	Obsolete	P-Channel	MOSFET (Metal Oxide)	700mA (Ta)	10V	1.2Ohm @ 420mA, 10V	Through Hole	4V @ 250µA	8.7 nC @ 10 V	100 V	±20V	200 pF @ 25 V	-	-	4-HVMDIP	-	1.3W (Ta)	-55°C ~ 175°C (TJ)
SUD50N03-12P-E3 MOSFET N-CH 30V TO252 Vishay Siliconix	5,339	-	询价单	数据表	TrenchFET®	TO-252-3, DPAK (2 Leads + Tab), SC-63	Tape & Reel (TR)	Obsolete	N-Channel	MOSFET (Metal Oxide)	17.5A (Ta)	4.5V, 10V	12mOhm @ 20A, 10V	Surface Mount	3V @ 250µA	42 nC @ 10 V	30 V	±20V	1600 pF @ 25 V	-	-	TO-252AA	-	6.5W (Ta), 46.8W (Tc)	-55°C ~ 175°C (TJ)

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