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场效应晶体管（FETs）、MOSFETs
| 图片 | 厂商料号 | 库存情况 | 价格 | 数量 | 数据表 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压（最大导通电阻，最小导通电阻） | 导通电阻 (Rds On)（最大值）@ Id, Vgs | 安装类型 | 栅极阈值电压 (Vgs(th)）（最大值）@ Id | 栅极电荷 (Qg)（最大值）@ Vgs | 漏极到源极电压 (Vdss) | 栅极电压 (Vgs)（最大值） | 输入电容 (Ciss)（最大值）@ Vds | 认证 | FET 特性 | 供应商设备封装 | 等级 | 功耗（最大值） | 工作温度 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
IRF634STRLPBFMOSFET N-CHANNEL 250V Vishay Siliconix |
8,504 | - |
|
数据表 |
- | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Active | - | - | 8.1A (Tc) | - | - | Surface Mount | - | - | - | - | - | - | - | TO-263 (D2PAK) | - | - | - |
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|
IRLR110TRPBF-BE3N-CHANNEL 100V Vishay Siliconix |
5,496 | - |
|
数据表 |
- | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 4.3A (Tc) | 4V, 5V | 540mOhm @ 2.6A, 5V | Surface Mount | 2V @ 250µA | 6.1 nC @ 5 V | 100 V | ±10V | 250 pF @ 25 V | - | - | TO-252AA | - | 2.5W (Ta), 25W (Tc) | -55°C ~ 150°C (TJ) |
|
SIHP5N50D-E3MOSFET N-CH 500V 5.3A TO220AB Vishay Siliconix |
7,221 | - |
|
数据表 |
- | TO-220-3 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 5.3A (Tc) | 10V | 1.5Ohm @ 2.5A, 10V | Through Hole | 5V @ 250µA | 20 nC @ 10 V | 500 V | ±30V | 325 pF @ 100 V | - | - | TO-220AB | - | 104W (Tc) | -55°C ~ 150°C (TJ) |
|
SIHS90N65E-GE3E SERIES POWER MOSFET SUPER-247, Vishay Siliconix |
233 | - |
|
数据表 |
E | TO-274AA | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 87A (Tc) | 10V | 29mOhm @ 45A, 10V | Through Hole | 4V @ 250µA | 591 nC @ 10 V | 650 V | ±30V | 11826 pF @ 100 V | - | - | SUPER-247™ (TO-274AA) | - | 625W (Tc) | -55°C ~ 150°C (TJ) |
|
SIHU2N80E-GE3MOSFET N-CH 800V 2.8A IPAK Vishay Siliconix |
3,417 | - |
|
数据表 |
E | TO-251-3 Short Leads, IPAK, TO-251AA | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 2.8A (Tc) | 10V | 2.75Ohm @ 1A, 10V | Through Hole | 4V @ 250µA | 19.6 nC @ 10 V | 800 V | ±30V | 315 pF @ 100 V | - | - | TO-251AA | - | 62.5W (Tc) | -55°C ~ 150°C (TJ) |
|
SIHF5N50D-E3MOSFET N-CH 500V 5.3A TO220 Vishay Siliconix |
4,570 | - |
|
数据表 |
- | TO-220-3 Full Pack | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 5.3A (Tc) | 10V | 1.5Ohm @ 2.5A, 10V | Through Hole | 5V @ 250µA | 20 nC @ 10 V | 500 V | ±30V | 325 pF @ 100 V | - | - | TO-220 Full Pack | - | 30W (Tc) | -55°C ~ 150°C (TJ) |
|
IRFR120TRRPBFMOSFET N-CH 100V 7.7A DPAK Vishay Siliconix |
4,528 | - |
|
数据表 |
- | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 7.7A (Tc) | 10V | 270mOhm @ 4.6A, 10V | Surface Mount | 4V @ 250µA | 16 nC @ 10 V | 100 V | ±20V | 360 pF @ 25 V | - | - | DPAK | - | 2.5W (Ta), 42W (Tc) | -55°C ~ 150°C (TJ) |
|
SQD45P03-12-T4_GE3MOSFET P-CH 30V 50A TO252AA Vishay Siliconix |
4,017 | - |
|
数据表 |
TrenchFET® | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Active | P-Channel | MOSFET (Metal Oxide) | 50A (Tc) | 4.5V, 10V | 10mOhm @ 15A, 10V | Surface Mount | 2.5V @ 250µA | 83 nC @ 10 V | 30 V | ±20V | 3495 pF @ 15 V | AEC-Q101 | - | TO-252AA | Automotive | 71W (Tc) | -55°C ~ 175°C (TJ) |
|
SI1013X-T1-E3MOSFET P-CH 20V 350MA SC89-3 Vishay Siliconix |
8,989 | - |
|
数据表 |
TrenchFET® | SC-89, SOT-490 | Tape & Reel (TR) | Obsolete | P-Channel | MOSFET (Metal Oxide) | 350mA (Ta) | 1.8V, 4.5V | 1.2Ohm @ 350mA, 4.5V | Surface Mount | 450mV @ 250µA (Min) | 1.5 nC @ 4.5 V | 20 V | ±6V | - | - | - | SC-89-3 | - | 250mW (Ta) | -55°C ~ 150°C (TJ) |
|
SI1400DL-T1-GE3MOSFET N-CH 20V 1.6A SC70-6 Vishay Siliconix |
7,524 | - |
|
数据表 |
TrenchFET® | 6-TSSOP, SC-88, SOT-363 | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 1.6A (Ta) | 2.5V, 4.5V | 150mOhm @ 1.7A, 4.5V | Surface Mount | 600mV @ 250µA (Min) | 4 nC @ 4.5 V | 20 V | ±12V | - | - | - | SC-70-6 | - | 568mW (Ta) | -55°C ~ 150°C (TJ) |
