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场效应晶体管（FETs）、MOSFETs
| 图片 | 厂商料号 | 库存情况 | 价格 | 数量 | 数据表 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压（最大导通电阻，最小导通电阻） | 导通电阻 (Rds On)（最大值）@ Id, Vgs | 安装类型 | 栅极阈值电压 (Vgs(th)）（最大值）@ Id | 栅极电荷 (Qg)（最大值）@ Vgs | 漏极到源极电压 (Vdss) | 栅极电压 (Vgs)（最大值） | 输入电容 (Ciss)（最大值）@ Vds | 认证 | FET 特性 | 供应商设备封装 | 等级 | 功耗（最大值） | 工作温度 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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IRFD220PBFMOSFET N-CH 200V 800MA 4DIP Vishay Siliconix |
9,479 | - |
|
数据表 |
- | 4-DIP (0.300", 7.62mm) | Bulk | Obsolete | N-Channel | MOSFET (Metal Oxide) | 800mA (Ta) | 10V | 800mOhm @ 480mA, 10V | Through Hole | 4V @ 250µA | 14 nC @ 10 V | 200 V | ±20V | 260 pF @ 25 V | - | - | 4-HVMDIP | - | 1W (Ta) | -55°C ~ 150°C (TJ) |
|
SIHG47N60AEF-GE3MOSFET N-CH 600V 40A TO247AC Vishay Siliconix |
216 | - |
|
数据表 |
EF | TO-247-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 40A (Tc) | 10V | 70mOhm @ 23.5A, 10V | Through Hole | 4V @ 250µA | 189 nC @ 10 V | 600 V | ±30V | 3576 pF @ 100 V | - | - | TO-247AC | - | 313W (Tc) | -55°C ~ 150°C (TJ) |
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IRFR214TRPBF-BE3N-CHANNEL 250V Vishay Siliconix |
5,198 | - |
|
数据表 |
- | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 2.2A (Tc) | 10V | 2Ohm @ 1.3A, 10V | Surface Mount | 4V @ 250µA | 8.2 nC @ 10 V | 250 V | ±20V | 140 pF @ 25 V | - | - | TO-252AA | - | 2.5W (Ta), 25W (Tc) | -55°C ~ 150°C (TJ) |
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SIHG039N60EF-GE3MOSFET N-CH 600V 61A TO247AC Vishay Siliconix |
435 | - |
|
数据表 |
EF | TO-247-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 61A (Tc) | 10V | 40mOhm @ 32A, 10V | Through Hole | 5V @ 250µA | 126 nC @ 10 V | 600 V | ±30V | 4323 pF @ 100 V | - | - | TO-247AC | - | 357W (Tc) | -55°C ~ 150°C (TJ) |
|
SI4484EY-T1-GE3MOSFET N-CH 100V 4.8A 8SO Vishay Siliconix |
7,539 | - |
|
数据表 |
TrenchFET® | 8-SOIC (0.154", 3.90mm Width) | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 4.8A (Ta) | 6V, 10V | 34mOhm @ 6.9A, 10V | Surface Mount | 2V @ 250µA (Min) | 30 nC @ 10 V | 100 V | ±20V | - | - | - | 8-SOIC | - | 1.8W (Ta) | -55°C ~ 175°C (TJ) |
|
IRFR310TRRPBFMOSFET N-CH 400V 1.7A DPAK Vishay Siliconix |
5,206 | - |
|
数据表 |
- | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 1.7A (Tc) | 10V | 3.6Ohm @ 1A, 10V | Surface Mount | 4V @ 250µA | 12 nC @ 10 V | 400 V | ±20V | 170 pF @ 25 V | - | - | DPAK | - | 2.5W (Ta), 25W (Tc) | -55°C ~ 150°C (TJ) |
|
TP0202K-T1-E3MOSFET P-CH 30V 385MA SOT23-3 Vishay Siliconix |
9,388 | - |
|
数据表 |
TrenchFET® | TO-236-3, SC-59, SOT-23-3 | Tape & Reel (TR) | Obsolete | P-Channel | MOSFET (Metal Oxide) | 385mA (Ta) | 4.5V, 10V | 1.4Ohm @ 500mA, 10V | Surface Mount | 3V @ 250µA | 1 nC @ 10 V | 30 V | ±20V | 31 pF @ 15 V | - | - | SOT-23-3 (TO-236) | - | 350mW (Ta) | -55°C ~ 150°C (TJ) |
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|
SI2305ADS-T1-GE3MOSFET P-CH 8V 5.4A SOT23-3 Vishay Siliconix |
8,514 | - |
|
数据表 |
TrenchFET® | TO-236-3, SC-59, SOT-23-3 | Tape & Reel (TR) | Obsolete | P-Channel | MOSFET (Metal Oxide) | 5.4A (Tc) | 1.8V, 4.5V | 40mOhm @ 4.1A, 4.5V | Surface Mount | 800mV @ 250µA | 15 nC @ 4.5 V | 8 V | ±8V | 740 pF @ 4 V | - | - | SOT-23-3 (TO-236) | - | 960mW (Ta), 1.7W (Tc) | -50°C ~ 150°C (TJ) |
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SIHG47N60E-E3MOSFET N-CH 600V 47A TO247AC Vishay Siliconix |
225 | - |
|
数据表 |
- | TO-247-3 | Tube | Not For New Designs | N-Channel | MOSFET (Metal Oxide) | 47A (Tc) | 10V | 64mOhm @ 24A, 10V | Through Hole | 4V @ 250µA | 220 nC @ 10 V | 600 V | ±30V | 9620 pF @ 100 V | - | - | TO-247AC | - | 357W (Tc) | -55°C ~ 150°C (TJ) |
|
SIHK045N60E-T1-GE3E SERIES POWER MOSFET POWERPAK 1 Vishay Siliconix |
1,806 | - |
|
数据表 |
E | 8-PowerBSFN | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 48A (Tc) | 10V | 49mOhm @ 17A, 10V | Surface Mount | 5V @ 250µA | 98 nC @ 10 V | 600 V | ±30V | 4013 pF @ 100 V | - | - | PowerPAK®10 x 12 | - | 278W (Tc) | -55°C ~ 150°C (TJ) |
