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场效应晶体管(FETs)、MOSFETs

制造商 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度

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图片 厂商料号 库存情况 价格 数量 数据表 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度
SI4666DY-T1-GE3

SI4666DY-T1-GE3

MOSFET N-CH 25V 16.5A 8SO

Vishay Siliconix

2,584 -
SI4666DY-T1-GE3

数据表

TrenchFET® 8-SOIC (0.154", 3.90mm Width) Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 16.5A (Tc) 2.5V, 10V 10mOhm @ 10A, 10V Surface Mount 1.5V @ 250µA 34 nC @ 10 V 25 V ±12V 1145 pF @ 10 V - - 8-SOIC - 2.5W (Ta), 5W (Tc) -55°C ~ 150°C (TJ)
SI2305ADS-T1-E3

SI2305ADS-T1-E3

MOSFET P-CH 8V 5.4A SOT23-3

Vishay Siliconix

8,273 -
SI2305ADS-T1-E3

数据表

TrenchFET® TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Obsolete P-Channel MOSFET (Metal Oxide) 5.4A (Tc) 1.8V, 4.5V 40mOhm @ 4.1A, 4.5V Surface Mount 800mV @ 250µA 15 nC @ 4.5 V 8 V ±8V 740 pF @ 4 V - - SOT-23-3 (TO-236) - 960mW (Ta), 1.7W (Tc) -50°C ~ 150°C (TJ)
SI4172DY-T1-GE3

SI4172DY-T1-GE3

MOSFET N-CH 30V 15A 8SO

Vishay Siliconix

7,613 -
SI4172DY-T1-GE3

数据表

TrenchFET® 8-SOIC (0.154", 3.90mm Width) Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 15A (Tc) 4.5V, 10V 12mOhm @ 11A, 10V Surface Mount 2.5V @ 250µA 23 nC @ 10 V 30 V ±20V 820 pF @ 15 V - - 8-SOIC - 2.5W (Ta), 4.5W (Tc) -55°C ~ 150°C (TJ)
SIA448DJ-T1-GE3

SIA448DJ-T1-GE3

MOSFET N-CH 20V 12A PPAK SC70-6

Vishay Siliconix

7,387 -
SIA448DJ-T1-GE3

数据表

TrenchFET® PowerPAK® SC-70-6 Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 12A (Tc) 1.5V, 4.5V 15mOhm @ 12.4A, 4.5V Surface Mount 1V @ 250µA 35 nC @ 8 V 20 V ±8V 1380 pF @ 1 V - - PowerPAK® SC-70-6 - 3.5W (Ta), 19.2W (Tc) -55°C ~ 150°C (TJ)
SIHK045N60EF-T1GE3

SIHK045N60EF-T1GE3

E SERIES POWER MOSFET WITH FAST

Vishay Siliconix

1,998 -
SIHK045N60EF-T1GE3

数据表

EF 8-PowerBSFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 47A (Tc) 10V 52mOhm @ 17A, 10V Surface Mount 5V @ 250µA 105 nC @ 10 V 600 V ±30V 4685 pF @ 100 V - - PowerPAK®10 x 12 - 278W (Tc) -55°C ~ 150°C (TJ)
IRFR010TRPBF

IRFR010TRPBF

MOSFET N-CH 50V 8.2A DPAK

Vishay Siliconix

7,115 -
IRFR010TRPBF

数据表

- TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 8.2A (Tc) 10V 200mOhm @ 4.6A, 10V Surface Mount 4V @ 250µA 10 nC @ 10 V 50 V ±20V 250 pF @ 25 V - - DPAK - 25W (Tc) -55°C ~ 150°C (TJ)
SIHL630STRL-GE3

SIHL630STRL-GE3

MOSFET N-CH 200V 9A D2PAK

Vishay Siliconix

6,650 -
SIHL630STRL-GE3

数据表

- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 9A (Tc) 4V, 5V 400mOhm @ 5.4A, 5V Surface Mount 2V @ 250µA 40 nC @ 10 V 200 V ±10V 1100 pF @ 25 V - - TO-263 (D2PAK) - 3.1W (Ta), 74W (Tc) -55°C ~ 150°C (TJ)
SI4354DY-T1-E3

SI4354DY-T1-E3

MOSFET N-CH 30V 9.5A 8SO

Vishay Siliconix

5,736 -
SI4354DY-T1-E3

数据表

TrenchFET® 8-SOIC (0.154", 3.90mm Width) Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 9.5A (Ta) 4.5V, 10V 16.5mOhm @ 9.5A, 10V Surface Mount 1.6V @ 250µA 10.5 nC @ 4.5 V 30 V ±12V - - - 8-SOIC - 2.5W (Ta) -55°C ~ 150°C (TJ)
SI4354DY-T1-GE3

SI4354DY-T1-GE3

MOSFET N-CH 30V 9.5A 8SO

Vishay Siliconix

7,337 -
SI4354DY-T1-GE3

数据表

TrenchFET® 8-SOIC (0.154", 3.90mm Width) Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 9.5A (Ta) 4.5V, 10V 16.5mOhm @ 9.5A, 10V Surface Mount 1.6V @ 250µA 10.5 nC @ 4.5 V 30 V ±12V - - - 8-SOIC - 2.5W (Ta) -55°C ~ 150°C (TJ)
IRFU224PBF

IRFU224PBF

MOSFET N-CH 250V 3.8A TO251AA

Vishay Siliconix

9,479 -
IRFU224PBF

数据表

- TO-251-3 Short Leads, IPAK, TO-251AA Tube Obsolete N-Channel MOSFET (Metal Oxide) 3.8A (Tc) 10V 1.1Ohm @ 2.3A, 10V Through Hole 4V @ 250µA 14 nC @ 10 V 250 V ±20V 260 pF @ 25 V - - TO-251AA - 2.5W (Ta), 42W (Tc) -55°C ~ 150°C (TJ)
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