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场效应晶体管（FETs）、MOSFETs
| 图片 | 厂商料号 | 库存情况 | 价格 | 数量 | 数据表 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压（最大导通电阻，最小导通电阻） | 导通电阻 (Rds On)（最大值）@ Id, Vgs | 安装类型 | 栅极阈值电压 (Vgs(th)）（最大值）@ Id | 栅极电荷 (Qg)（最大值）@ Vgs | 漏极到源极电压 (Vdss) | 栅极电压 (Vgs)（最大值） | 输入电容 (Ciss)（最大值）@ Vds | 认证 | FET 特性 | 供应商设备封装 | 等级 | 功耗（最大值） | 工作温度 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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SI3451DV-T1-E3MOSFET P-CH 20V 2.8A 6TSOP Vishay Siliconix |
3,236 | - |
|
数据表 |
TrenchFET® | SOT-23-6 Thin, TSOT-23-6 | Tape & Reel (TR) | Obsolete | P-Channel | MOSFET (Metal Oxide) | 2.8A (Tc) | 2.5V, 4.5V | 115mOhm @ 2.6A, 4.5V | Surface Mount | 1.5V @ 250µA | 5.1 nC @ 5 V | 20 V | ±12V | 250 pF @ 10 V | - | - | 6-TSOP | - | 1.25W (Ta), 2.1W (Tc) | -55°C ~ 150°C (TJ) |
|
SIHW47N60E-GE3MOSFET N-CH 600V 47A TO247AD Vishay Siliconix |
345 | - |
|
数据表 |
- | TO-3P-3 Full Pack | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 47A (Tc) | 10V | 64mOhm @ 24A, 10V | Through Hole | 4V @ 250µA | 220 nC @ 10 V | 600 V | ±20V | 9620 pF @ 100 V | - | - | TO-247AD | - | 357W (Tc) | -55°C ~ 150°C (TJ) |
|
SIS436DN-T1-GE3MOSFET N-CH 25V 16A PPAK 1212-8 Vishay Siliconix |
2,294 | - |
|
数据表 |
TrenchFET® | PowerPAK® 1212-8 | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 16A (Tc) | 4.5V, 10V | 10.5mOhm @ 10A, 10V | Surface Mount | 2.3V @ 250µA | 22 nC @ 10 V | 25 V | ±20V | 855 pF @ 10 V | - | - | PowerPAK® 1212-8 | - | 3.5W (Ta), 27.7W (Tc) | -55°C ~ 150°C (TJ) |
|
SIHH105N60EF-T1GE3EF SERIES POWER MOSFET WITH FAST Vishay Siliconix |
3,009 | - |
|
数据表 |
- | 8-PowerTDFN | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 26A (Tc) | 10V | 105mOhm @ 13A, 10V | Surface Mount | 5V @ 250µA | 50 nC @ 10 V | 600 V | ±30V | 2099 pF @ 100 V | - | - | PowerPAK® 8 x 8 | - | 174W (Tc) | -55°C ~ 150°C (TJ) |
|
SQD40N06-14L_T4GE3MOSFET N-CH 60V 40A TO252AA Vishay Siliconix |
9,561 | - |
|
数据表 |
TrenchFET® | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 40A (Tc) | 4.5V, 10V | 14mOhm @ 20A, 10V | Surface Mount | 2.5V @ 250µA | 51 nC @ 10 V | 60 V | ±20V | 2105 pF @ 25 V | - | - | TO-252AA | - | 75W (Tc) | -55°C ~ 175°C (TJ) |
|
|
SIR820DP-T1-GE3MOSFET N-CH 30V 40A PPAK SO-8 Vishay Siliconix |
2,013 | - |
|
数据表 |
- | PowerPAK® SO-8 | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 40A (Tc) | 4.5V, 10V | 3mOhm @ 15A, 10V | Surface Mount | 2.4V @ 250µA | 95 nC @ 10 V | 30 V | ±20V | 3512 pF @ 15 V | - | - | PowerPAK® SO-8 | - | 37.8W (Tc) | -55°C ~ 150°C (TJ) |
|
SI1413EDH-T1-E3MOSFET P-CH 20V 2.3A SC70-6 Vishay Siliconix |
3,852 | - |
|
数据表 |
TrenchFET® | 6-TSSOP, SC-88, SOT-363 | Tape & Reel (TR) | Obsolete | P-Channel | MOSFET (Metal Oxide) | 2.3A (Ta) | 1.8V, 4.5V | 115mOhm @ 2.9A, 4.5V | Surface Mount | 450mV @ 100µA (Min) | 8 nC @ 4.5 V | 20 V | ±12V | - | - | - | SC-70-6 | - | 1W (Ta) | -55°C ~ 150°C (TJ) |
|
|
IRFPC60PBFMOSFET N-CH 600V 16A TO247-3 Vishay Siliconix |
302 | - |
|
数据表 |
- | TO-247-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 16A (Tc) | 10V | 400mOhm @ 9.6A, 10V | Through Hole | 4V @ 250µA | 210 nC @ 10 V | 600 V | ±20V | 3900 pF @ 25 V | - | - | TO-247AC | - | 280W (Tc) | -55°C ~ 150°C (TJ) |
|
|
SI1417EDH-T1-E3MOSFET P-CH 12V 2.7A SC70-6 Vishay Siliconix |
6,926 | - |
|
数据表 |
TrenchFET® | 6-TSSOP, SC-88, SOT-363 | Tape & Reel (TR) | Obsolete | P-Channel | MOSFET (Metal Oxide) | 2.7A (Ta) | 1.8V, 4.5V | 85mOhm @ 3.3A, 4.5V | Surface Mount | 450mV @ 250µA (Min) | 8 nC @ 4.5 V | 12 V | ±12V | - | - | - | SC-70-6 | - | 1W (Ta) | -55°C ~ 150°C (TJ) |
|
|
SI1470DH-T1-E3MOSFET N-CH 30V 5.1A SC70-6 Vishay Siliconix |
5,073 | - |
|
数据表 |
TrenchFET® | 6-TSSOP, SC-88, SOT-363 | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 5.1A (Tc) | 2.5V, 4.5V | 66mOhm @ 3.8A, 4.5V | Surface Mount | 1.6V @ 250µA | 7.5 nC @ 5 V | 30 V | ±12V | 510 pF @ 15 V | - | - | SC-70-6 | - | 1.5W (Ta), 2.8W (Tc) | -55°C ~ 150°C (TJ) |
