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场效应晶体管（FETs）、MOSFETs
| 图片 | 厂商料号 | 库存情况 | 价格 | 数量 | 数据表 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压（最大导通电阻，最小导通电阻） | 导通电阻 (Rds On)（最大值）@ Id, Vgs | 安装类型 | 栅极阈值电压 (Vgs(th)）（最大值）@ Id | 栅极电荷 (Qg)（最大值）@ Vgs | 漏极到源极电压 (Vdss) | 栅极电压 (Vgs)（最大值） | 输入电容 (Ciss)（最大值）@ Vds | 认证 | FET 特性 | 供应商设备封装 | 等级 | 功耗（最大值） | 工作温度 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
SI3446ADV-T1-E3MOSFET N-CH 20V 6A 6TSOP Vishay Siliconix |
2,591 | - |
|
数据表 |
TrenchFET® | SOT-23-6 Thin, TSOT-23-6 | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 6A (Tc) | 2.5V, 4.5V | 37mOhm @ 5.8A, 4.5V | Surface Mount | 1.8V @ 250µA | 20 nC @ 10 V | 20 V | ±12V | 640 pF @ 10 V | - | - | 6-TSOP | - | 2W (Ta), 3.2W (Tc) | -55°C ~ 150°C (TJ) |
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|
SI3447BDV-T1-E3MOSFET P-CH 12V 4.5A 6TSOP Vishay Siliconix |
3,733 | - |
|
数据表 |
TrenchFET® | SOT-23-6 Thin, TSOT-23-6 | Tape & Reel (TR) | Obsolete | P-Channel | MOSFET (Metal Oxide) | 4.5A (Ta) | 1.8V, 4.5V | 40mOhm @ 6A, 4.5V | Surface Mount | 1V @ 250µA | 14 nC @ 4.5 V | 12 V | ±8V | - | - | - | 6-TSOP | - | 1.1W (Ta) | -55°C ~ 150°C (TJ) |
|
SI1417EDH-T1-GE3MOSFET P-CH 12V 2.7A SC70-6 Vishay Siliconix |
7,267 | - |
|
数据表 |
TrenchFET® | 6-TSSOP, SC-88, SOT-363 | Tape & Reel (TR) | Obsolete | P-Channel | MOSFET (Metal Oxide) | 2.7A (Ta) | 1.8V, 4.5V | 85mOhm @ 3.3A, 4.5V | Surface Mount | 450mV @ 250µA (Min) | 8 nC @ 4.5 V | 12 V | ±12V | - | - | - | SC-70-6 | - | 1W (Ta) | -55°C ~ 150°C (TJ) |
|
|
SI1426DH-T1-GE3MOSFET N-CH 30V 2.8A SC70-6 Vishay Siliconix |
7,657 | - |
|
数据表 |
TrenchFET® | 6-TSSOP, SC-88, SOT-363 | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 2.8A (Ta) | 4.5V, 10V | 75mOhm @ 3.6A, 10V | Surface Mount | 2.5V @ 250µA | 3 nC @ 4.5 V | 30 V | ±20V | - | - | - | SC-70-6 | - | 1W (Ta) | -55°C ~ 150°C (TJ) |
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|
SI1470DH-T1-GE3MOSFET N-CH 30V 5.1A SC70-6 Vishay Siliconix |
6,486 | - |
|
数据表 |
TrenchFET® | 6-TSSOP, SC-88, SOT-363 | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 5.1A (Tc) | 2.5V, 4.5V | 66mOhm @ 3.8A, 4.5V | Surface Mount | 1.6V @ 250µA | 7.5 nC @ 5 V | 30 V | ±12V | 510 pF @ 15 V | - | - | SC-70-6 | - | 1.5W (Ta), 2.8W (Tc) | -55°C ~ 150°C (TJ) |
|
SI8467DB-T2-E1MOSFET P-CH 20V 4MICROFOOT Vishay Siliconix |
7,456 | - |
|
数据表 |
TrenchFET® | 4-XFBGA, CSPBGA | Tape & Reel (TR) | Obsolete | P-Channel | MOSFET (Metal Oxide) | 2.5A (Ta) | 2.5V, 4.5V | 73mOhm @ 1A, 4.5V | Surface Mount | 1.5V @ 250µA | 21 nC @ 10 V | 20 V | ±12V | 475 pF @ 10 V | - | - | 4-Microfoot | - | 780mW (Ta), 1.8W (Tc) | -55°C ~ 150°C (TJ) |
|
SIS478DN-T1-GE3MOSFET N-CH 30V 12A PPAK1212-8 Vishay Siliconix |
6,742 | - |
|
数据表 |
TrenchFET® | PowerPAK® 1212-8 | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 12A (Tc) | 4.5V, 10V | 20mOhm @ 8A, 10V | Surface Mount | 2.5V @ 250µA | 10.5 nC @ 10 V | 30 V | ±25V | 398 pF @ 15 V | - | - | PowerPAK® 1212-8 | - | 15.6W (Tc) | -55°C ~ 150°C (TJ) |
|
SIHG47N60EF-GE3MOSFET N-CH 600V 47A TO247AC Vishay Siliconix |
463 | - |
|
数据表 |
- | TO-247-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 47A (Tc) | 10V | 67mOhm @ 24A, 10V | Through Hole | 4V @ 250µA | 225 nC @ 10 V | 600 V | ±30V | 4854 pF @ 100 V | - | - | TO-247AC | - | 379W (Tc) | -55°C ~ 150°C (TJ) |
|
SIHH070N60EF-T1GE3MOSFET N-CH 600V 36A PPAK 8 X 8 Vishay Siliconix |
3,000 | - |
|
数据表 |
EF | 8-PowerTDFN | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 36A (Tc) | 10V | 71mOhm @ 15A, 10V | Surface Mount | 5V @ 250µA | 75 nC @ 10 V | 600 V | ±30V | 2647 pF @ 100 V | - | - | PowerPAK® 8 x 8 | - | 202W (Tc) | -55°C ~ 150°C (TJ) |
|
SIHK055N60E-T1-GE3E SERIES POWER MOSFET POWERPAK 1 Vishay Siliconix |
1,967 | - |
|
数据表 |
E | 8-PowerBSFN | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 42A (Tc) | 10V | 56mOhm @ 16A, 10V | Surface Mount | 5V @ 250µA | 81 nC @ 10 V | 600 V | ±30V | 3504 pF @ 100 V | - | - | PowerPAK®10 x 12 | - | 236W (Tc) | -55°C ~ 150°C (TJ) |
