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场效应晶体管（FETs）、MOSFETs
| 图片 | 厂商料号 | 库存情况 | 价格 | 数量 | 数据表 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压（最大导通电阻，最小导通电阻） | 导通电阻 (Rds On)（最大值）@ Id, Vgs | 安装类型 | 栅极阈值电压 (Vgs(th)）（最大值）@ Id | 栅极电荷 (Qg)（最大值）@ Vgs | 漏极到源极电压 (Vdss) | 栅极电压 (Vgs)（最大值） | 输入电容 (Ciss)（最大值）@ Vds | 认证 | FET 特性 | 供应商设备封装 | 等级 | 功耗（最大值） | 工作温度 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
SIHG47N60AE-GE3MOSFET N-CH 600V 43A TO247AC Vishay Siliconix |
3,763 | - |
|
数据表 |
E | TO-247-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 43A (Tc) | 10V | 65mOhm @ 24A, 10V | Through Hole | 4V @ 250µA | 182 nC @ 10 V | 600 V | ±30V | 3600 pF @ 100 V | - | - | TO-247AC | - | 313W (Tc) | -55°C ~ 150°C (TJ) |
|
SIJH5700E-T1-GE3N-CHANNEL 150 V (D-S) 175C MOSFE Vishay Siliconix |
1,978 | - |
|
数据表 |
TrenchFET® | PowerPAK® 8 x 8 | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 17A (Ta), 174A (Tc) | 7.5V, 10V | 4.1mOhm @ 20A, 10V | Surface Mount | 4V @ 250µA | 140 nC @ 10 V | 150 V | ±20V | 7500 pF @ 75 V | - | - | PowerPAK® 8 x 8 | - | 3.3W (Ta), 333W (Tc) | -55°C ~ 175°C (TJ) |
|
SUP85N10-10-GE3MOSFET N-CH 100V 85A TO220AB Vishay Siliconix |
500 | - |
|
数据表 |
TrenchFET® | TO-220-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 85A (Tc) | 4.5V, 10V | 10.5mOhm @ 30A, 10V | Through Hole | 3V @ 250µA | 160 nC @ 10 V | 100 V | ±20V | 6550 pF @ 25 V | - | - | - | - | 3.75W (Ta), 250W (Tc) | -55°C ~ 175°C (TJ) |
|
SQJ446EP-T1_GE3MOSFET N-CH 40V 60A PPAK SO-8 Vishay Siliconix |
2,888 | - |
|
数据表 |
TrenchFET® | PowerPAK® SO-8 | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 60A (Tc) | 4.5V, 10V | 5mOhm @ 14A, 10V | Surface Mount | 2.5V @ 250µA | 65 nC @ 10 V | 40 V | ±20V | 4220 pF @ 20 V | AEC-Q101 | - | PowerPAK® SO-8 | Automotive | 46W (Tc) | -55°C ~ 175°C (TJ) |
|
IRFR010TRLPBFMOSFET N-CH 50V 8.2A DPAK Vishay Siliconix |
2,141 | - |
|
数据表 |
- | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 8.2A (Tc) | 10V | 200mOhm @ 4.6A, 10V | Surface Mount | 4V @ 250µA | 10 nC @ 10 V | 50 V | ±20V | 250 pF @ 25 V | - | - | DPAK | - | 25W (Tc) | -55°C ~ 150°C (TJ) |
|
|
IRLR014TRLPBFMOSFET N-CH 60V 7.7A DPAK Vishay Siliconix |
5,823 | - |
|
数据表 |
- | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 7.7A (Tc) | 4V, 5V | 200mOhm @ 4.6A, 5V | Surface Mount | 2V @ 250µA | 8.4 nC @ 5 V | 60 V | ±10V | 400 pF @ 25 V | - | - | DPAK | - | 2.5W (Ta), 25W (Tc) | -55°C ~ 150°C (TJ) |
|
SI1012R-T1-E3MOSFET N-CH 20V 500MA SC75A Vishay Siliconix |
2,786 | - |
|
数据表 |
TrenchFET® | SC-75, SOT-416 | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 500mA (Ta) | 1.8V, 4.5V | 700mOhm @ 600mA, 4.5V | Surface Mount | 900mV @ 250µA | 0.75 nC @ 4.5 V | 20 V | ±6V | - | - | - | SC-75A | - | 150mW (Ta) | -55°C ~ 150°C (TJ) |
|
SI1012X-T1-E3MOSFET N-CH 20V 500MA SC89-3 Vishay Siliconix |
3,906 | - |
|
数据表 |
TrenchFET® | SC-89, SOT-490 | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 500mA (Ta) | 1.8V, 4.5V | 700mOhm @ 600mA, 4.5V | Surface Mount | 900mV @ 250µA | 0.75 nC @ 4.5 V | 20 V | ±6V | - | - | - | SC-89-3 | - | 250mW (Ta) | -55°C ~ 150°C (TJ) |
|
|
SI1013R-T1-E3MOSFET P-CH 20V 350MA SC75A Vishay Siliconix |
9,174 | - |
|
数据表 |
TrenchFET® | SC-75, SOT-416 | Tape & Reel (TR) | Obsolete | P-Channel | MOSFET (Metal Oxide) | 350mA (Ta) | 1.8V, 4.5V | 1.2Ohm @ 350mA, 4.5V | Surface Mount | 450mV @ 250µA (Min) | 1.5 nC @ 4.5 V | 20 V | ±6V | - | - | - | SC-75A | - | 150mW (Ta) | -55°C ~ 150°C (TJ) |
|
SI1032X-T1-E3MOSFET N-CH 20V 200MA SC89-3 Vishay Siliconix |
8,151 | - |
|
数据表 |
TrenchFET® | SC-89, SOT-490 | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 200mA (Ta) | 1.5V, 4.5V | 5Ohm @ 200mA, 4.5V | Surface Mount | 1.2V @ 250µA | 0.75 nC @ 4.5 V | 20 V | ±6V | - | - | - | SC-89-3 | - | 300mW (Ta) | -55°C ~ 150°C (TJ) |
