Vishay Siliconix|场效应晶体管（FETs）、MOSFETs - 页 21

厂商料号	库存情况	价格	数量	数据表	系列	封装/外壳	包装	产品状态	FET 类型	技术	电流 - 连续漏极 (Id) @ 25°C	驱动电压（最大导通电阻，最小导通电阻）	导通电阻 (Rds On)（最大值）@ Id, Vgs	安装类型	栅极阈值电压 (Vgs(th)）（最大值）@ Id	栅极电荷 (Qg)（最大值）@ Vgs	漏极到源极电压 (Vdss)	栅极电压 (Vgs)（最大值）	输入电容 (Ciss)（最大值）@ Vds	认证	FET 特性	供应商设备封装	等级	功耗（最大值）	工作温度
SI2323DS-T1 MOSFET P-CH 20V 3.7A SOT23-3 Vishay Siliconix	7,698	-	询价单	数据表	TrenchFET®	TO-236-3, SC-59, SOT-23-3	Tape & Reel (TR)	Obsolete	P-Channel	MOSFET (Metal Oxide)	3.7A (Ta)	1.8V, 4.5V	39mOhm @ 4.7A, 4.5V	Surface Mount	1V @ 250µA	19 nC @ 4.5 V	20 V	±8V	1020 pF @ 10 V	-	-	SOT-23-3 (TO-236)	-	750mW (Ta)	-55°C ~ 150°C (TJ)
SIHK105N60EF-T1GE3 E SERIES POWER MOSFET POWERPAK 1 Vishay Siliconix	1,990	-	询价单	数据表	EF	8-PowerBSFN	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	24A (Tc)	10V	105mOhm @ 10A, 10V	Surface Mount	5V @ 250µA	51 nC @ 10 V	600 V	±30V	2301 pF @ 100 V	-	-	PowerPAK®10 x 12	-	142W (Tc)	-55°C ~ 150°C (TJ)
SI1069X-T1-GE3 MOSFET P-CH 20V 0.94A SC89-6 Vishay Siliconix	6,695	-	询价单	数据表	TrenchFET®	SOT-563, SOT-666	Tape & Reel (TR)	Obsolete	P-Channel	MOSFET (Metal Oxide)	940mA (Ta)	2.5V, 4.5V	184mOhm @ 940mA, 4.5V	Surface Mount	1.5V @ 250µA	6.86 nC @ 5 V	20 V	±12V	308 pF @ 10 V	-	-	SC-89 (SOT-563F)	-	236mW (Ta)	-55°C ~ 150°C (TJ)
SIB455EDK-T1-GE3 MOSFET P-CH 12V 9A PPAK SC75-6 Vishay Siliconix	2,511	-	询价单	数据表	TrenchFET®	PowerPAK® SC-75-6	Tape & Reel (TR)	Obsolete	P-Channel	MOSFET (Metal Oxide)	9A (Tc)	1.5V, 4.5V	27mOhm @ 5.6A, 4.5V	Surface Mount	1V @ 250µA	30 nC @ 8 V	12 V	±10V	-	-	-	PowerPAK® SC-75-6	-	2.4W (Ta), 13W (Tc)	-55°C ~ 150°C (TJ)
SIHB30N60ET1-GE3 N-CHANNEL 600V Vishay Siliconix	1,112	-	询价单	数据表	-	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	29A (Tc)	10V	125mOhm @ 15A, 10V	Surface Mount	4V @ 250µA	130 nC @ 10 V	600 V	±30V	2600 pF @ 100 V	-	-	TO-263 (D2PAK)	-	250W (Tc)	-55°C ~ 150°C (TJ)
IRFR214PBF MOSFET N-CH 250V 2.2A DPAK Vishay Siliconix	4,850	-	询价单	数据表	-	TO-252-3, DPAK (2 Leads + Tab), SC-63	Tube	Obsolete	N-Channel	MOSFET (Metal Oxide)	2.2A (Tc)	10V	2Ohm @ 1.3A, 10V	Surface Mount	4V @ 250µA	8.2 nC @ 10 V	250 V	±20V	140 pF @ 25 V	-	-	DPAK	-	2.5W (Ta), 25W (Tc)	-55°C ~ 150°C (TJ)
IRFR214TRRPBF MOSFET N-CH 250V 2.2A DPAK Vishay Siliconix	2,392	-	询价单	数据表	-	TO-252-3, DPAK (2 Leads + Tab), SC-63	Tape & Reel (TR)	Obsolete	N-Channel	MOSFET (Metal Oxide)	2.2A (Tc)	10V	2Ohm @ 1.3A, 10V	Surface Mount	4V @ 250µA	8.2 nC @ 10 V	250 V	±20V	140 pF @ 25 V	-	-	DPAK	-	2.5W (Ta), 25W (Tc)	-55°C ~ 150°C (TJ)
SI4831DY-T1-E3 MOSFET P-CH 30V 5A 8-SOIC Vishay Siliconix	7,882	-	询价单	数据表	LITTLE FOOT®	8-SOIC (0.154", 3.90mm Width)	Tape & Reel (TR)	Obsolete	P-Channel	MOSFET (Metal Oxide)	5A (Ta)	4.5V, 10V	45mOhm @ 5A, 10V	Surface Mount	1V @ 250µA (Min)	20 nC @ 5 V	30 V	±20V	-	-	Schottky Diode (Isolated)	8-SOIC	-	2W (Ta)	-55°C ~ 150°C (TJ)
SI7230DN-T1-GE3 MOSFET N-CH 30V 9A PPAK 1212-8 Vishay Siliconix	3,843	-	询价单	数据表	TrenchFET®	PowerPAK® 1212-8	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	9A (Ta)	4.5V, 10V	12mOhm @ 14A, 10V	Surface Mount	3V @ 250µA	20 nC @ 5 V	30 V	±20V	-	-	-	PowerPAK® 1212-8	-	1.5W (Ta)	-55°C ~ 150°C (TJ)
SI7806ADN-T1-GE3 MOSFET N-CH 30V 9A PPAK1212-8 Vishay Siliconix	4,338	-	询价单	数据表	TrenchFET®	PowerPAK® 1212-8	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	9A (Ta)	4.5V, 10V	11mOhm @ 14A, 10V	Surface Mount	3V @ 250µA	20 nC @ 5 V	30 V	±20V	-	-	-	PowerPAK® 1212-8	-	1.5W (Ta)	-55°C ~ 150°C (TJ)

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