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场效应晶体管（FETs）、MOSFETs
| 图片 | 厂商料号 | 库存情况 | 价格 | 数量 | 数据表 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压（最大导通电阻，最小导通电阻） | 导通电阻 (Rds On)（最大值）@ Id, Vgs | 安装类型 | 栅极阈值电压 (Vgs(th)）（最大值）@ Id | 栅极电荷 (Qg)（最大值）@ Vgs | 漏极到源极电压 (Vdss) | 栅极电压 (Vgs)（最大值） | 输入电容 (Ciss)（最大值）@ Vds | 认证 | FET 特性 | 供应商设备封装 | 等级 | 功耗（最大值） | 工作温度 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
SIHB120N60E-GE3MOSFET N-CH 600V 25A D2PAK Vishay Siliconix |
906 | - |
|
数据表 |
E | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 25A (Tc) | 10V | 120mOhm @ 12A, 10V | Surface Mount | 5V @ 250µA | 45 nC @ 10 V | 600 V | ±30V | 1562 pF @ 100 V | - | - | TO-263 (D2PAK) | - | 179W (Tc) | -55°C ~ 150°C (TJ) |
|
SIHH14N65EF-T1-GE3MOSFET N-CH 650V 15A PPAK 8 X 8 Vishay Siliconix |
3,000 | - |
|
数据表 |
- | 8-PowerTDFN | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 15A (Tc) | 10V | 271mOhm @ 7A, 10V | Surface Mount | 4V @ 250µA | 98 nC @ 10 V | 650 V | ±30V | 1749 pF @ 100 V | - | - | PowerPAK® 8 x 8 | - | 156W (Tc) | -55°C ~ 150°C (TJ) |
|
SIHB080N60E-GE3E SERIES POWER MOSFET D2PAK (TO- Vishay Siliconix |
1,722 | - |
|
数据表 |
E | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 35A (Tc) | 10V | 80mOhm @ 17A, 10V | Surface Mount | 5V @ 250µA | 63 nC @ 10 V | 600 V | ±30V | 2557 pF @ 100 V | - | - | TO-263 (D2PAK) | - | 227W (Tc) | -55°C ~ 150°C (TJ) |
|
IRFD120PBFMOSFET N-CH 100V 1.3A 4DIP Vishay Siliconix |
6,132 | - |
|
数据表 |
- | 4-DIP (0.300", 7.62mm) | Bulk | Obsolete | N-Channel | MOSFET (Metal Oxide) | 1.3A (Ta) | 10V | 270mOhm @ 780mA, 10V | Through Hole | 4V @ 250µA | 16 nC @ 10 V | 100 V | ±20V | 360 pF @ 25 V | - | - | 4-HVMDIP | - | 1.3W (Ta) | -55°C ~ 175°C (TJ) |
|
|
IRFD214PBFMOSFET N-CH 250V 450MA 4DIP Vishay Siliconix |
5,349 | - |
|
数据表 |
- | 4-DIP (0.300", 7.62mm) | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 450mA (Ta) | 10V | 2Ohm @ 270mA, 10V | Through Hole | 4V @ 250µA | 8.2 nC @ 10 V | 250 V | ±20V | 140 pF @ 25 V | - | - | 4-HVMDIP | - | 1W (Ta) | -55°C ~ 150°C (TJ) |
|
|
IRFD010PBFMOSFET N-CH 50V 1.7A 4DIP Vishay Siliconix |
6,349 | - |
|
数据表 |
- | 4-DIP (0.300", 7.62mm) | Bulk | Obsolete | N-Channel | MOSFET (Metal Oxide) | 1.7A (Tc) | 10V | 200mOhm @ 860mA, 10V | Through Hole | 4V @ 250µA | 13 nC @ 10 V | 50 V | ±20V | 250 pF @ 25 V | - | - | 4-HVMDIP | - | 1W (Tc) | -55°C ~ 150°C (TJ) |
|
SIHF068N60EF-GE3MOSFET N-CH 600V 16A TO220 Vishay Siliconix |
623 | - |
|
数据表 |
EF | TO-220-3 Full Pack | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 16A (Tc) | 10V | 68mOhm @ 16A, 10V | Through Hole | 5V @ 250µA | 77 nC @ 10 V | 600 V | ±30V | 2628 pF @ 100 V | - | - | TO-220 Full Pack | - | 39W (Tc) | -55°C ~ 150°C (TJ) |
|
SIHK125N60EF-T1GE3E SERIES POWER MOSFET WITH FAST Vishay Siliconix |
2,050 | - |
|
数据表 |
EF | 8-PowerBSFN | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 21A (Tc) | 10V | 125mOhm @ 12A, 10V | Surface Mount | 5V @ 250µA | 45 nC @ 10 V | 600 V | ±30V | 1863 pF @ 100 V | - | - | PowerPAK®10 x 12 | - | 132W (Tc) | -55°C ~ 150°C |
|
|
SIHK105N60E-T1-GE3E SERIES POWER MOSFET WITH FAST Vishay Siliconix |
2,050 | - |
|
数据表 |
EF | 8-PowerBSFN | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 24A (Tc) | 10V | 105mOhm @ 10A, 10V | Surface Mount | 5V @ 250µA | 51 nC @ 10 V | 600 V | ±30V | 2301 pF @ 100 V | - | - | PowerPAK®10 x 12 | - | 142W (Tc) | -55°C ~ 150°C (TJ) |
|
SI2343DS-T1MOSFET P-CH 30V 3.1A SOT23-3 Vishay Siliconix |
7,710 | - |
|
数据表 |
TrenchFET® | TO-236-3, SC-59, SOT-23-3 | Tape & Reel (TR) | Obsolete | P-Channel | MOSFET (Metal Oxide) | 3.1A (Ta) | 4.5V, 10V | 53mOhm @ 4A, 10V | Surface Mount | 3V @ 250µA | 21 nC @ 10 V | 30 V | ±20V | 540 pF @ 15 V | - | - | SOT-23-3 (TO-236) | - | 750mW (Ta) | -55°C ~ 150°C (TJ) |
