Vishay Siliconix|场效应晶体管（FETs）、MOSFETs - 页 19

厂商料号	库存情况	价格	数量	数据表	系列	封装/外壳	包装	产品状态	FET 类型	技术	电流 - 连续漏极 (Id) @ 25°C	驱动电压（最大导通电阻，最小导通电阻）	导通电阻 (Rds On)（最大值）@ Id, Vgs	安装类型	栅极阈值电压 (Vgs(th)）（最大值）@ Id	栅极电荷 (Qg)（最大值）@ Vgs	漏极到源极电压 (Vdss)	栅极电压 (Vgs)（最大值）	输入电容 (Ciss)（最大值）@ Vds	认证	FET 特性	供应商设备封装	等级	功耗（最大值）	工作温度
SIHG21N80AE-GE3 MOSFET N-CH 800V 17.4A TO247AC Vishay Siliconix	485	-	询价单	数据表	E	TO-247-3	Tube	Active	N-Channel	MOSFET (Metal Oxide)	17.4A (Tc)	10V	235mOhm @ 11A, 10V	Through Hole	4V @ 250µA	72 nC @ 10 V	800 V	±30V	1388 pF @ 100 V	-	-	TO-247AC	-	32W (Tc)	-55°C ~ 150°C (TJ)
IRFP260PBF MOSFET N-CH 200V 46A TO247-3 Vishay Siliconix	292	-	询价单	数据表	-	TO-247-3	Tube	Active	N-Channel	MOSFET (Metal Oxide)	46A (Tc)	10V	55mOhm @ 28A, 10V	Through Hole	4V @ 250µA	230 nC @ 10 V	200 V	±20V	5200 pF @ 25 V	-	-	TO-247AC	-	280W (Tc)	-55°C ~ 150°C (TJ)
SIHA17N80E-GE3 N-CHANNEL 800V Vishay Siliconix	1,980	-	询价单	数据表	E	TO-220-3 Full Pack	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	6A (Tc)	10V	290mOhm @ 8.5A, 10V	Through Hole	4V @ 250µA	122 nC @ 10 V	800 V	±30V	2408 pF @ 100 V	-	-	TO-220 Full Pack	-	35W (Tc)	-55°C ~ 150°C (TJ)
SIHG125N60EF-GE3 MOSFET N-CH 600V 25A TO247AC Vishay Siliconix	500	-	询价单	数据表	EF	TO-247-3	Tube	Active	N-Channel	MOSFET (Metal Oxide)	25A (Tc)	10V	125mOhm @ 12A, 10V	Through Hole	5V @ 250µA	47 nC @ 10 V	600 V	±30V	1533 pF @ 100 V	-	-	TO-247AC	-	179W (Tc)	-55°C ~ 150°C (TJ)
SUD50N04-16P-E3 MOSFET N-CH 40V 9.8A/20A TO252 Vishay Siliconix	3,397	-	询价单	数据表	TrenchFET®	TO-252-3, DPAK (2 Leads + Tab), SC-63	Tape & Reel (TR)	Obsolete	N-Channel	MOSFET (Metal Oxide)	9.8A (Ta), 20A (Tc)	4.5V, 10V	16mOhm @ 15A, 10V	Surface Mount	2.2V @ 250µA	60 nC @ 10 V	40 V	±16V	1655 pF @ 20 V	-	-	TO-252AA	-	3.1W (Ta), 35.7W (Tc)	-55°C ~ 175°C (TJ)
IRFR110TRRPBF MOSFET N-CH 100V 4.3A DPAK Vishay Siliconix	8,070	-	询价单	数据表	-	TO-252-3, DPAK (2 Leads + Tab), SC-63	Tape & Reel (TR)	Obsolete	N-Channel	MOSFET (Metal Oxide)	4.3A (Tc)	10V	540mOhm @ 2.6A, 10V	Surface Mount	4V @ 250µA	8.3 nC @ 10 V	100 V	±20V	180 pF @ 25 V	-	-	DPAK	-	2.5W (Ta), 25W (Tc)	-55°C ~ 150°C (TJ)
SIRA60DP-T1-RE3 MOSFET N-CH 30V 100A PPAK SO-8 Vishay Siliconix	8,719	-	询价单	数据表	TrenchFET® Gen IV	PowerPAK® SO-8	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	100A (Tc)	4.5V, 10V	0.94mOhm @ 20A, 10V	Surface Mount	2.2V @ 250µA	125 nC @ 10 V	30 V	+20V, -16V	7650 pF @ 15 V	-	-	PowerPAK® SO-8	-	57W (Tc)	-55°C ~ 150°C (TJ)
SUP40N25-60-E3 MOSFET N-CH 250V 40A TO220AB Vishay Siliconix	466	-	询价单	数据表	TrenchFET®	TO-220-3	Tube	Active	N-Channel	MOSFET (Metal Oxide)	40A (Tc)	6V, 10V	60mOhm @ 20A, 10V	Through Hole	4V @ 250µA	140 nC @ 10 V	250 V	±30V	5000 pF @ 25 V	-	-	TO-220AB	-	3.75W (Ta), 300W (Tc)	-55°C ~ 175°C (TJ)
SIHB21N65EF-GE3 MOSFET N-CH 650V 21A D2PAK Vishay Siliconix	143	-	询价单	数据表	-	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Tube	Active	N-Channel	MOSFET (Metal Oxide)	21A (Tc)	10V	180mOhm @ 11A, 10V	Surface Mount	4V @ 250µA	106 nC @ 10 V	650 V	±30V	2322 pF @ 100 V	-	-	TO-263 (D2PAK)	-	208W (Tc)	-55°C ~ 150°C (TJ)
SQJ456EP-T1_GE3 MOSFET N-CH 100V 32A PPAK SO-8 Vishay Siliconix	4,408	-	询价单	数据表	TrenchFET®	PowerPAK® SO-8	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	32A (Tc)	6V, 10V	26mOhm @ 9.3A, 10V	Surface Mount	3.5V @ 250µA	63 nC @ 10 V	100 V	±20V	3342 pF @ 25 V	AEC-Q101	-	PowerPAK® SO-8	Automotive	83W (Tc)	-55°C ~ 175°C (TJ)

共 3677 条记录«上一页 1... 15 16 17 181920 21 22...368 下一页»