Vishay Siliconix|场效应晶体管（FETs）、MOSFETs - 页 17

厂商料号	库存情况	价格	数量	数据表	系列	封装/外壳	包装	产品状态	FET 类型	技术	电流 - 连续漏极 (Id) @ 25°C	驱动电压（最大导通电阻，最小导通电阻）	导通电阻 (Rds On)（最大值）@ Id, Vgs	安装类型	栅极阈值电压 (Vgs(th)）（最大值）@ Id	栅极电荷 (Qg)（最大值）@ Vgs	漏极到源极电压 (Vdss)	栅极电压 (Vgs)（最大值）	输入电容 (Ciss)（最大值）@ Vds	认证	FET 特性	供应商设备封装	等级	功耗（最大值）	工作温度
SIR5812DP-T1-RE3 MOSFET N-CH 80V 30A PPAK SO-8 Vishay Siliconix	2,326	-	询价单	数据表	TrenchFET®	PowerPAK® SO-8	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	13A (Ta), 45.3A (Tc)	7.5V, 10V	13.5mOhm @ 10A, 10V	Surface Mount	4V @ 250µA	15 nC @ 10 V	80 V	±20V	775 pF @ 40 V	-	-	PowerPAK® SO-8	-	4.1W (Ta), 50W (Tc)	-55°C ~ 150°C (TJ)
SQJA46EP-T2_GE3 MOSFET N-CH 40V 60A PPAK SO-8 Vishay Siliconix	8,181	-	询价单	数据表	TrenchFET®	PowerPAK® SO-8	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	60A (Tc)	10V	3mOhm @ 10A, 10V	Surface Mount	3.5V @ 250µA	105 nC @ 10 V	40 V	±20V	5000 pF @ 25 V	AEC-Q101	-	PowerPAK® SO-8	Automotive	68W (Tc)	-55°C ~ 175°C (TJ)
SIHH11N60EF-T1-GE3 MOSFET N-CH 600V 11A PPAK 8 X 8 Vishay Siliconix	1,405	-	询价单	数据表	-	8-PowerTDFN	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	11A (Tc)	10V	357mOhm @ 5.5A, 10V	Surface Mount	4V @ 250µA	62 nC @ 10 V	600 V	±30V	1078 pF @ 100 V	-	-	PowerPAK® 8 x 8	-	114W (Tc)	-55°C ~ 150°C (TJ)
SIHG24N80AE-GE3 MOSFET N-CH 800V 21A TO247AC Vishay Siliconix	460	-	询价单	数据表	-	TO-247-3	Tube	Active	N-Channel	MOSFET (Metal Oxide)	21A (Tc)	-	184mOhm @ 10A, 10V	Through Hole	4V @ 250µA	89 nC @ 10 V	800 V	±30V	1836 pF @ 100 V	-	-	TO-247AC	-	208W (Tc)	-55°C ~ 150°C (TJ)
SI4890BDY-T1-GE3 MOSFET N-CH 30V 16A 8SO Vishay Siliconix	6,081	-	询价单	数据表	TrenchFET®	8-SOIC (0.154", 3.90mm Width)	Tape & Reel (TR)	Obsolete	N-Channel	MOSFET (Metal Oxide)	16A (Tc)	4.5V, 10V	12mOhm @ 10A, 10V	Surface Mount	2.6V @ 250µA	33 nC @ 10 V	30 V	±25V	1535 pF @ 15 V	-	-	8-SOIC	-	2.5W (Ta), 5.7W (Tc)	-55°C ~ 150°C (TJ)
SIHH250N60EF-T1GE3 EF SERIES POWER MOSFET WITH FAST Vishay Siliconix	3,050	-	询价单	数据表	EF	8-PowerTDFN	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	13A (Tc)	10V	250mOhm @ 5.5A, 10V	Surface Mount	5V @ 250µA	23 nC @ 10 V	600 V	±30V	915 pF @ 100 V	-	-	PowerPAK® 8 x 8	-	89W (Tc)	-55°C ~ 150°C (TJ)
IRFBC40LCPBF-BE3 MOSFET N-CH 600V 6.2A TO220AB Vishay Siliconix	843	-	询价单	数据表	-	TO-220-3	Tube	Active	N-Channel	MOSFET (Metal Oxide)	6.2A (Tc)	-	1.2Ohm @ 3.7A, 10V	Through Hole	4V @ 250µA	39 nC @ 10 V	600 V	±30V	1100 pF @ 25 V	-	-	TO-220AB	-	125W (Tc)	-55°C ~ 150°C (TJ)
SIHA125N60EF-GE3 MOSFET N-CH 600V 11A TO220 Vishay Siliconix	992	-	询价单	数据表	EF	TO-220-3 Full Pack	Tube	Active	N-Channel	MOSFET (Metal Oxide)	11A (Tc)	10V	125mOhm @ 12A, 10V	Through Hole	5V @ 250µA	47 nC @ 10 V	600 V	±30V	1533 pF @ 100 V	-	-	TO-220 Full Pack	-	179W (Tc)	-55°C ~ 150°C (TJ)
IRFBC40ASTRLPBF MOSFET N-CH 600V 6.2A D2PAK Vishay Siliconix	550	-	询价单	数据表	-	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	6.2A (Tc)	10V	1.2Ohm @ 3.7A, 10V	Surface Mount	4V @ 250µA	42 nC @ 10 V	600 V	±30V	1036 pF @ 25 V	-	-	TO-263 (D2PAK)	-	125W (Tc)	-55°C ~ 150°C (TJ)
SIHG21N60EF-GE3 MOSFET N-CH 600V 21A TO247AC Vishay Siliconix	397	-	询价单	数据表	-	TO-247-3	Tube	Active	N-Channel	MOSFET (Metal Oxide)	21A (Tc)	10V	176mOhm @ 11A, 10V	Through Hole	4V @ 250µA	84 nC @ 10 V	600 V	±30V	2030 pF @ 100 V	-	-	TO-247AC	-	227W (Tc)	-55°C ~ 150°C (TJ)

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