Vishay Siliconix|场效应晶体管（FETs）、MOSFETs - 页 13

厂商料号	库存情况	价格	数量	数据表	系列	封装/外壳	包装	产品状态	FET 类型	技术	电流 - 连续漏极 (Id) @ 25°C	驱动电压（最大导通电阻，最小导通电阻）	导通电阻 (Rds On)（最大值）@ Id, Vgs	安装类型	栅极阈值电压 (Vgs(th)）（最大值）@ Id	栅极电荷 (Qg)（最大值）@ Vgs	漏极到源极电压 (Vdss)	栅极电压 (Vgs)（最大值）	输入电容 (Ciss)（最大值）@ Vds	认证	FET 特性	供应商设备封装	等级	功耗（最大值）	工作温度
SIHA120N60E-GE3 MOSFET N-CH 600V 25A TO220 Vishay Siliconix	994	-	询价单	数据表	E	TO-220-3 Full Pack	Bulk	Active	N-Channel	MOSFET (Metal Oxide)	25A (Tc)	10V	120mOhm @ 12A, 10V	Through Hole	5V @ 250µA	45 nC @ 10 V	600 V	±30V	1562 pF @ 100 V	-	-	TO-220 Full Pack	-	34W (Tc)	-55°C ~ 150°C (TJ)
SQJ460AEP-T2_GE3 MOSFET N-CH 60V 58A PPAK SO-8 Vishay Siliconix	3,780	-	询价单	数据表	TrenchFET®	PowerPAK® SO-8	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	58A (Tc)	4.5V, 10V	8.7mOhm @ 10.7A, 10V	Surface Mount	2.5V @ 250µA	106 nC @ 10 V	60 V	±20V	2654 pF @ 30 V	AEC-Q101	-	PowerPAK® SO-8	Automotive	68W (Tc)	-55°C ~ 175°C (TJ)
SIHB125N60EF-GE3 MOSFET N-CH 600V 25A D2PAK Vishay Siliconix	2,720	-	询价单	数据表	EF	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Tube	Active	N-Channel	MOSFET (Metal Oxide)	25A (Tc)	10V	125mOhm @ 12A, 10V	Surface Mount	5V @ 250µA	47 nC @ 10 V	600 V	±30V	1533 pF @ 100 V	-	-	TO-263 (D2PAK)	-	179W (Tc)	-55°C ~ 150°C (TJ)
SIDR220EP-T1-RE3 N-CHANNEL 25 V (D-S) 175C MOSFET Vishay Siliconix	5,988	-	询价单	数据表	TrenchFET® Gen IV	PowerPAK® SO-8	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	92.8A (Ta), 415A (Tc)	4.5V, 10V	0.58mOhm @ 20A, 10V	Surface Mount	2.1V @ 250µA	200 nC @ 10 V	25 V	+16V, -12V	10850 pF @ 10 V	-	-	PowerPAK® SO-8DC	-	6.25W (Ta), 415W (Tc)	-55°C ~ 175°C (TJ)
SUP50010E-GE3 MOSFET N-CH 60V 150A TO220AB Vishay Siliconix	168	-	询价单	数据表	TrenchFET®	TO-220-3	Tube	Active	N-Channel	MOSFET (Metal Oxide)	150A (Tc)	7.5V, 10V	2mOhm @ 30A, 10V	Through Hole	4V @ 250µA	212 nC @ 10 V	60 V	±20V	10895 pF @ 30 V	-	-	TO-220AB	-	375W (Tc)	-55°C ~ 175°C (TJ)
SIHG21N80AEF-GE3 E SERIES POWER MOSFET WITH FAST Vishay Siliconix	450	-	询价单	数据表	EF	TO-247-3	Bulk	Active	N-Channel	MOSFET (Metal Oxide)	16.3A (Tc)	10V	250mOhm @ 8.5A, 10V	Through Hole	4V @ 250µA	71 nC @ 10 V	800 V	±30V	1511 pF @ 100 V	-	-	TO-247AC	-	179W (Tc)	-55°C ~ 150°C (TJ)
SI2305DS-T1-E3 MOSFET P-CH 8V 3.5A SOT23-3 Vishay Siliconix	6,910	-	询价单	数据表	-	TO-236-3, SC-59, SOT-23-3	Cut Tape (CT)	Obsolete	P-Channel	MOSFET (Metal Oxide)	3.5A (Ta)	-	52mOhm @ 3.5A, 4.5V	Surface Mount	800mV @ 250µA	15 nC @ 4.5 V	8 V	-	1245 pF @ 4 V	-	-	SOT-23-3 (TO-236)	-	-	-
TP0101K-T1-E3 MOSFET P-CH 20V 0.58A SOT23-3 Vishay Siliconix	6,754	-	询价单	数据表	-	TO-236-3, SC-59, SOT-23-3	Cut Tape (CT)	Obsolete	P-Channel	MOSFET (Metal Oxide)	580mA (Ta)	-	650mOhm @ 580mA, 4.5V	Surface Mount	1V @ 50µA	2.2 nC @ 4.5 V	20 V	-	-	-	-	SOT-23-3 (TO-236)	-	-	-
SI4778DY-T1-E3 MOSFET N-CH 25V 8A 8SO Vishay Siliconix	2,744	-	询价单	数据表	TrenchFET®	8-SOIC (0.154", 3.90mm Width)	Tape & Reel (TR)	Obsolete	N-Channel	MOSFET (Metal Oxide)	8A (Tc)	4.5V, 10V	23mOhm @ 7A, 10V	Surface Mount	2.2V @ 250µA	18 nC @ 10 V	25 V	±16V	680 pF @ 13 V	-	-	8-SOIC	-	2.4W (Ta), 5W (Tc)	-55°C ~ 150°C (TJ)
SI1414DH-T1-GE3 MOSFET N-CH 30V 4A SOT-363 Vishay Siliconix	7,978	-	询价单	数据表	TrenchFET®	6-TSSOP, SC-88, SOT-363	Tape & Reel (TR)	Obsolete	N-Channel	MOSFET (Metal Oxide)	4A (Tc)	1.8V, 4.5V	46mOhm @ 4A, 4.5V	Surface Mount	1V @ 250µA	15 nC @ 8 V	30 V	±8V	560 pF @ 15 V	-	-	SC-70-6	-	2.8W (Tc)	-55°C ~ 150°C (TJ)

共 3677 条记录«上一页 1... 9 10 11 121314 15 16...368 下一页»