Vishay Siliconix|场效应晶体管（FETs）、MOSFETs - 页 14

厂商料号	库存情况	价格	数量	数据表	系列	封装/外壳	包装	产品状态	FET 类型	技术	电流 - 连续漏极 (Id) @ 25°C	驱动电压（最大导通电阻，最小导通电阻）	导通电阻 (Rds On)（最大值）@ Id, Vgs	安装类型	栅极阈值电压 (Vgs(th)）（最大值）@ Id	栅极电荷 (Qg)（最大值）@ Vgs	漏极到源极电压 (Vdss)	栅极电压 (Vgs)（最大值）	输入电容 (Ciss)（最大值）@ Vds	认证	FET 特性	供应商设备封装	等级	功耗（最大值）	工作温度
SI4048DY-T1-GE3 MOSFET N-CH 30V 19.3A 8SO Vishay Siliconix	6,541	-	询价单	数据表	TrenchFET®	8-SOIC (0.154", 3.90mm Width)	Tape & Reel (TR)	Obsolete	N-Channel	MOSFET (Metal Oxide)	19.3A (Tc)	10V	85mOhm @ 15A, 10V	Surface Mount	3V @ 250µA	51 nC @ 10 V	30 V	±20V	2060 pF @ 15 V	-	-	8-SOIC	-	2.5W (Ta), 5.7W (Tc)	-55°C ~ 150°C (TJ)
SQM120N04-1M7L_GE3 MOSFET N-CH 40V 120A TO263 Vishay Siliconix	2,178	-	询价单	数据表	TrenchFET®	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	120A (Tc)	4.5V, 10V	1.7mOhm @ 30A, 10V	Surface Mount	2.5V @ 250µA	285 nC @ 10 V	40 V	±20V	14606 pF @ 20 V	-	-	TO-263	-	375W (Tc)	-55°C ~ 175°C (TJ)
SIHA22N60EF-GE3 MOSFET N-CH 600V 19A TO220 Vishay Siliconix	929	-	询价单	数据表	EF	TO-220-3 Full Pack	Tube	Active	N-Channel	MOSFET (Metal Oxide)	19A (Tc)	10V	182mOhm @ 11A, 10V	Through Hole	4V @ 250µA	96 nC @ 10 V	600 V	±30V	1423 pF @ 100 V	-	-	TO-220 Full Pack	-	33W (Tc)	-55°C ~ 150°C (TJ)
SIHA24N80AE-GE3 MOSFET N-CH 800V 9A TO220 Vishay Siliconix	752	-	询价单	数据表	-	TO-220-3 Full Pack	Tube	Active	N-Channel	MOSFET (Metal Oxide)	9A (Tc)	-	184mOhm @ 10A, 10V	Through Hole	4V @ 250µA	89 nC @ 10 V	800 V	±30V	1836 pF @ 100 V	-	-	TO-220 Full Pack	-	35W (Tc)	-55°C ~ 150°C (TJ)
SQ3419CEV-T1_GE3 MOSFET P-CH 40V 6.9A 6TSOP Vishay Siliconix	8,438	-	询价单	数据表	-	SOT-23-6 Thin, TSOT-23-6	Tape & Reel (TR)	Active	P-Channel	MOSFET (Metal Oxide)	6.9A (Tc)	4.5V, 10V	58mOhm @ 2.5A, 10V	Surface Mount	2.5V @ 250µA	11.3 nC @ 4.5 V	40 V	±20V	990 pF @ 20 V	-	-	6-TSOP	-	5W (Tc)	-55°C ~ 175°C (TJ)
SQ2361CES-T1_GE3 MOSFET P-CH 60V 2.8A SOT23-3 Vishay Siliconix	6,325	-	询价单	数据表	-	TO-236-3, SC-59, SOT-23-3	Tape & Reel (TR)	Active	P-Channel	MOSFET (Metal Oxide)	2.8A (Tc)	4.5V, 10V	177mOhm @ 2.4A, 10V	Surface Mount	2.5V @ 250µA	12 nC @ 10 V	60 V	±20V	550 pF @ 30 V	-	-	SOT-23-3 (TO-236)	-	2W (Tc)	-55°C ~ 175°C (TJ)
SUM70030M-GE3 MOSFET N-CH 100V 150A TO263-7 Vishay Siliconix	1,070	-	询价单	数据表	TrenchFET®	TO-263-7, D2PAK (6 Leads + Tab)	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	150A (Tc)	-	3.5mOhm @ 30A, 10V	Surface Mount	4V @ 250µA	214 nC @ 10 V	100 V	±20V	10870 pF @ 50 V	-	-	TO-263-7	-	375W (Tc)	-55°C ~ 175°C (TJ)
SIRA52DP-T1-RE3 MOSFET N-CH 40V 60A PPAK SO-8 Vishay Siliconix	5,703	-	询价单	数据表	TrenchFET® Gen IV	PowerPAK® SO-8	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	60A (Tc)	4.5V, 10V	1.7mOhm @ 15A, 10V	Surface Mount	2.4V @ 250µA	150 nC @ 10 V	40 V	+20V, -16V	7150 pF @ 20 V	-	-	PowerPAK® SO-8	-	48W (Tc)	-55°C ~ 150°C (TJ)
IRFBE30STRLPBF MOSFET N-CH 800V 4.1A D2PAK Vishay Siliconix	700	-	询价单	数据表	-	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	4.1A (Tc)	10V	3Ohm @ 2.5A, 10V	Surface Mount	4V @ 250µA	78 nC @ 10 V	800 V	±20V	1300 pF @ 25 V	-	-	TO-263 (D2PAK)	-	125W (Tc)	-55°C ~ 150°C (TJ)
SIHG180N60E-GE3 MOSFET N-CH 600V 19A TO247AC Vishay Siliconix	329	-	询价单	数据表	E	TO-247-3	Tube	Active	N-Channel	MOSFET (Metal Oxide)	19A (Tc)	10V	180mOhm @ 9.5A, 10V	Through Hole	5V @ 250µA	33 nC @ 10 V	600 V	±30V	1085 pF @ 100 V	-	-	TO-247AC	-	156W (Tc)	-55°C ~ 150°C (TJ)

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