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场效应晶体管(FETs)、MOSFETs

制造商 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度

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图片 厂商料号 库存情况 价格 数量 数据表 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度
R6530KNZ4C13

R6530KNZ4C13

650V 30A TO-247, HIGH-SPEED SWIT

Rohm Semiconductor

353 -
R6530KNZ4C13

数据表

- TO-247-3 Tube Active N-Channel MOSFET (Metal Oxide) 30A (Tc) 10V 140mOhm @ 14.5A, 10V Through Hole 5V @ 960µA 56 nC @ 10 V 650 V ±20V 2350 pF @ 25 V - - TO-247G - 305W (Tc) 150°C (TJ)
RCX450N20

RCX450N20

MOSFET N-CH 200V 45A TO220FM

Rohm Semiconductor

425 -
RCX450N20

数据表

- TO-220-3 Full Pack Bulk Active N-Channel MOSFET (Metal Oxide) 45A (Tc) 10V 55mOhm @ 22.5A, 10V Through Hole 5V @ 1mA 80 nC @ 10 V 200 V ±30V 4200 pF @ 25 V - - TO-220FM - 2.23W (Ta), 40W (Tc) 150°C (TJ)
RW1A030APT2CR

RW1A030APT2CR

MOSFET P-CH 12V 3A 6WEMT

Rohm Semiconductor

5,071 -
RW1A030APT2CR

数据表

- 6-SMD, Flat Leads Tape & Reel (TR) Obsolete P-Channel MOSFET (Metal Oxide) 3A (Ta) 1.5V, 4.5V 42mOhm @ 3A, 4.5V Surface Mount 1V @ 1mA 22 nC @ 4.5 V 12 V -8V 2700 pF @ 6 V - - 6-WEMT - 700mW (Ta) 150°C (TJ)
R8002ANJGTL

R8002ANJGTL

NCH 800V 2A POWER MOSFET : R8002

Rohm Semiconductor

925 -
R8002ANJGTL

数据表

- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 2A (Tc) 10V 4.3Ohm @ 1A, 10V Surface Mount 5V @ 1mA 13 nC @ 10 V 800 V ±30V 250 pF @ 25 V - - TO-263S - 62W (Tc) 150°C (TJ)
RCD050N20TL

RCD050N20TL

MOSFET N-CH 200V 5A CPT3

Rohm Semiconductor

2,010 -
RCD050N20TL

数据表

- TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Last Time Buy N-Channel MOSFET (Metal Oxide) 5A (Ta) 10V 618mOhm @ 2.5A, 10V Surface Mount 5.25V @ 1mA 9 nC @ 10 V 200 V ±30V 380 pF @ 25 V - - CPT3 - 20W (Tc) 150°C (TJ)
R6030ENXC7G

R6030ENXC7G

600V 30A TO-220FM, LOW-NOISE POW

Rohm Semiconductor

846 -
R6030ENXC7G

数据表

- TO-220-3 Full Pack Tube Active N-Channel MOSFET (Metal Oxide) 30A (Tc) 10V 130mOhm @ 14.5A, 10V Through Hole 4V @ 1mA 85 nC @ 10 V 600 V ±20V 2100 pF @ 25 V - - TO-220FM - 86W (Tc) 150°C (TJ)
R8005ANJFRGTL

R8005ANJFRGTL

MOSFET N-CH 800V 5A LPTS

Rohm Semiconductor

1,848 -
R8005ANJFRGTL

数据表

- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 5A (Tc) 10V 2.1Ohm @ 2.5A, 10V Surface Mount 5V @ 1mA 20 nC @ 10 V 800 V ±30V 500 pF @ 25 V AEC-Q101 - LPTS Automotive 120W (Tc) 150°C (TJ)
R6024KNZ4C13

R6024KNZ4C13

MOSFET N-CH 600V 24A TO247

Rohm Semiconductor

570 -
R6024KNZ4C13

数据表

- TO-247-3 Tube Active N-Channel MOSFET (Metal Oxide) 24A (Tc) 10V 165mOhm @ 11.3A, 10V Through Hole 5V @ 1mA 45 nC @ 10 V 600 V ±20V 2000 pF @ 25 V - - TO-247 - 245W (Tc) 150°C (TJ)
R6011KNXC7G

R6011KNXC7G

600V 11A TO-220FM, HIGH-SPEED SW

Rohm Semiconductor

680 -
R6011KNXC7G

数据表

- TO-220-3 Full Pack Tube Active N-Channel MOSFET (Metal Oxide) 11A (Ta) 10V 390mOhm @ 3.8A, 10V Through Hole 5V @ 1mA 22 nC @ 10 V 600 V ±20V 740 pF @ 25 V - - TO-220FM - 53W (Tc) 150°C (TJ)
R6024ENX

R6024ENX

MOSFET N-CH 600V 24A TO220FM

Rohm Semiconductor

464 -
R6024ENX

数据表

- TO-220-3 Full Pack Bulk Not For New Designs N-Channel MOSFET (Metal Oxide) 24A (Tc) 10V 165mOhm @ 11.3A, 10V Through Hole 4V @ 1mA 70 nC @ 10 V 600 V ±20V 1650 pF @ 25 V - - TO-220FM - 40W (Tc) 150°C (TJ)
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