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场效应晶体管(FETs)、MOSFETs

制造商 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度

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图片 厂商料号 库存情况 价格 数量 数据表 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度
R6007JNJGTL

R6007JNJGTL

MOSFET N-CH 600V 7A LPTS

Rohm Semiconductor

1,080 -
R6007JNJGTL

数据表

- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 7A (Tc) 15V 780mOhm @ 3.5A, 15V Surface Mount 7V @ 1mA 17.5 nC @ 15 V 600 V ±30V 475 pF @ 100 V - - LPTS - 96W (Tc) -55°C ~ 150°C (TJ)
R6024KNX

R6024KNX

MOSFET N-CH 600V 24A TO220FM

Rohm Semiconductor

291 -
R6024KNX

数据表

- TO-220-3 Full Pack Bulk Not For New Designs N-Channel MOSFET (Metal Oxide) 24A (Tc) 10V 165mOhm @ 11.3A, 10V Through Hole 5V @ 1mA 45 nC @ 10 V 600 V ±20V 2000 pF @ 25 V - - TO-220FM - 74W (Tc) -55°C ~ 150°C (TJ)
R6015KNJTL

R6015KNJTL

MOSFET N-CH 600V 15A LPTS

Rohm Semiconductor

3,982 -
R6015KNJTL

数据表

- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 15A (Tc) 10V 290mOhm @ 6.5A, 10V Surface Mount 5V @ 1mA 37.5 nC @ 10 V 600 V ±20V 1050 pF @ 25 V - - LPTS - 184W (Tc) -55°C ~ 150°C (TJ)
R6524KNZ4C13

R6524KNZ4C13

650V 24A TO-247, HIGH-SPEED SWIT

Rohm Semiconductor

1,010 -
R6524KNZ4C13

数据表

- TO-247-3 Tube Active N-Channel MOSFET (Metal Oxide) 24A (Tc) 10V 185mOhm @ 11.3A, 10V Through Hole 5V @ 750µA 45 nC @ 10 V 650 V ±20V 1850 pF @ 25 V - - TO-247G - 245W (Tc) 150°C (TJ)
R6524ENZ4C13

R6524ENZ4C13

650V 24A TO-247, LOW-NOISE POWER

Rohm Semiconductor

475 -
R6524ENZ4C13

数据表

- TO-247-3 Tube Active N-Channel MOSFET (Metal Oxide) 24A (Tc) 10V 185mOhm @ 11.3A, 10V Through Hole 4V @ 750µA 70 nC @ 10 V 650 V ±20V 1650 pF @ 25 V - - TO-247G - 245W (Tc) 150°C (TJ)
RD3L07BBGTL1

RD3L07BBGTL1

NCH 60V 115A, TO-252, POWER MOSF

Rohm Semiconductor

2,359 -
RD3L07BBGTL1

数据表

- TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 70A (Tc) 4.5V, 10V 3.9mOhm @ 70A, 10V Surface Mount 2.5V @ 1mA 47 nC @ 10 V 60 V ±20V 2950 pF @ 30 V - - TO-252 - 102W (Tc) 150°C (TJ)
RCJ220N25TL

RCJ220N25TL

MOSFET N-CH 250V 22A LPTS

Rohm Semiconductor

946 -
RCJ220N25TL

数据表

- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 22A (Tc) 10V 140mOhm @ 11A, 10V Surface Mount 5V @ 1mA 60 nC @ 10 V 250 V ±30V 3200 pF @ 25 V - - LPTS - 1.56W (Ta), 40W (Tc) 150°C (TJ)
R6011KND3TL1

R6011KND3TL1

MOSFET N-CH 600V 11A TO252

Rohm Semiconductor

2,468 -
R6011KND3TL1

数据表

- TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 11A (Tc) 10V 390mOhm @ 3.8A, 10V Surface Mount 5V @ 1mA 22 nC @ 10 V 600 V ±20V 740 pF @ 25 V - - TO-252 - 124W (Tc) 150°C (TJ)
R6011END3TL1

R6011END3TL1

MOSFET N-CH 600V 11A TO252

Rohm Semiconductor

300 -
R6011END3TL1

数据表

- TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 11A (Tc) 10V 390mOhm @ 3.8A, 10V Surface Mount 4V @ 1mA 32 nC @ 10 V 600 V ±20V 670 pF @ 25 V - - TO-252 - 124W (Tc) 150°C (TJ)
RD3P08BBDTL

RD3P08BBDTL

MOSFET N-CH 100V 80A TO252

Rohm Semiconductor

9,410 -
RD3P08BBDTL

数据表

- TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Not For New Designs N-Channel MOSFET (Metal Oxide) 80A (Tc) 6V, 10V 11.6mOhm @ 80A, 10V Surface Mount 4V @ 1mA 37 nC @ 10 V 100 V ±20V 1940 pF @ 50 V - - TO-252 - 119W (Tc) 150°C (TJ)
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