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场效应晶体管(FETs)、MOSFETs

制造商 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度

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图片 厂商料号 库存情况 价格 数量 数据表 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度
R6035VNXC7G

R6035VNXC7G

600V 17A TO-220FM, PRESTOMOS WIT

Rohm Semiconductor

746 -
R6035VNXC7G

数据表

- TO-220-3 Full Pack Tube Active N-Channel MOSFET (Metal Oxide) 17A (Tc) 10V, 15V 114mOhm @ 8A, 15V Through Hole 6.5V @ 1.1mA 50 nC @ 10 V 600 V ±30V 2400 pF @ 100 V - - TO-220FM - 81W (Tc) 150°C (TJ)
R6020YNXC7G

R6020YNXC7G

600V 12A TO-220FM, FAST SWITCHIN

Rohm Semiconductor

1,100 -
R6020YNXC7G

数据表

- TO-220-3 Full Pack Tube Active N-Channel MOSFET (Metal Oxide) 12A (Tc) 10V, 12V 200mOhm @ 6A, 10V Through Hole 6V @ 1.65mA 28 nC @ 10 V 600 V ±30V 1200 pF @ 100 V - - TO-220FM - 62W (Tc) 150°C (TJ)
RD3G600GNTL

RD3G600GNTL

MOSFET N-CH 40V 60A TO252

Rohm Semiconductor

2,427 -
RD3G600GNTL

数据表

- TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Not For New Designs N-Channel MOSFET (Metal Oxide) 60A (Tc) 4.5V, 10V 3.6mOhm @ 60A, 10V Surface Mount 2.5V @ 1mA 46.5 nC @ 10 V 40 V ±20V 3400 pF @ 20 V - - TO-252 - 40W (Tc) 150°C (TJ)
RW1E025RPT2CR

RW1E025RPT2CR

MOSFET P-CH 30V 2.5A 6WEMT

Rohm Semiconductor

4,122 -
RW1E025RPT2CR

数据表

- 6-SMD, Flat Leads Tape & Reel (TR) Obsolete P-Channel MOSFET (Metal Oxide) 2.5A (Ta) 4V, 10V 75mOhm @ 2.5A, 10V Surface Mount 2.5V @ 1mA 5.2 nC @ 5 V 30 V ±20V 480 pF @ 10 V - - 6-WEMT - 700mW (Ta) 150°C (TJ)
RD3U080AAFRATL

RD3U080AAFRATL

250V 8A TO-252, AUTOMOTIVE POWER

Rohm Semiconductor

3,899 -
RD3U080AAFRATL

数据表

- TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 8A (Tc) 10V 300mOhm @ 4A, 10V Surface Mount 5V @ 1mA 25 nC @ 10 V 250 V ±30V 1440 pF @ 25 V - - TO-252 - 85W (Tc) 150°C (TJ)
RS1E301GNTB1

RS1E301GNTB1

MOSFET N-CH 30V 30A/80A 8HSOP

Rohm Semiconductor

2,380 -
RS1E301GNTB1

数据表

- 8-PowerTDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 30A (Ta), 80A (Tc) 4.5V, 10V 2.2mOhm @ 30A, 10V Surface Mount 2.5V @ 1mA 39.8 nC @ 10 V 30 V ±20V 2500 pF @ 15 V - - 8-HSOP - 3W (Ta) 150°C (TJ)
R6511KNXC7G

R6511KNXC7G

650V 11A TO-220FM, HIGH-SPEED SW

Rohm Semiconductor

3,984 -
R6511KNXC7G

数据表

- TO-220-3 Full Pack Tube Active N-Channel MOSFET (Metal Oxide) 11A (Ta) 10V 400mOhm @ 3.8A, 10V Through Hole 5V @ 320µA 22 nC @ 10 V 650 V ±20V 760 pF @ 25 V - - TO-220FM - 53W (Tc) 150°C (TJ)
R6507END3TL1

R6507END3TL1

650V 7A TO-252, LOW-NOISE POWER

Rohm Semiconductor

2,375 -
R6507END3TL1

数据表

- TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 7A (Tc) 10V 665mOhm @ 2.4A, 10V Surface Mount 4V @ 200µA 20 nC @ 10 V 650 V ±20V 390 pF @ 25 V - - TO-252 - 78W (Tc) 150°C (TJ)
R6011KNX

R6011KNX

MOSFET N-CH 600V 11A TO220FM

Rohm Semiconductor

376 -
R6011KNX

数据表

- TO-220-3 Full Pack Bulk Not For New Designs N-Channel MOSFET (Metal Oxide) 11A (Tc) 10V 390mOhm @ 3.8A, 10V Through Hole 5V @ 1mA 22 nC @ 10 V 600 V ±20V 740 pF @ 25 V - - TO-220FM - 53W (Tc) -55°C ~ 150°C (TJ)
RS1G260MNTB

RS1G260MNTB

MOSFET N-CH 40V 26A 8HSOP

Rohm Semiconductor

2,288 -
RS1G260MNTB

数据表

- 8-PowerTDFN Tape & Reel (TR) Not For New Designs N-Channel MOSFET (Metal Oxide) 26A (Ta), 80A (Tc) 4.5V, 10V 3.3mOhm @ 26A, 10V Surface Mount 2.5V @ 1mA 44 nC @ 10 V 40 V ±20V 2988 pF @ 20 V - - 8-HSOP - 3W (Ta), 35W (Tc) 150°C (TJ)
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